Inventor

YUAN FENG

CN98 patents

⚠️ This page may combine multiple inventors who share the name “YUAN FENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YUAN FENG

TAIWAN SEMICONDUCTOR MFG CO LTD

Method for fabricating a strained structure and structure formed

Strain enhancement for FinFETs

Semiconductor device package and method of manufacturing the same

Transistor with a negative capacitance and a method of creating the same

Transistor with a negative capacitance and a method of creating the same

Semiconductor device having a strained region

FinFETs with different fin height and EPI height setting

FinFETs with different fin heights

Semiconductor device and method

Method for fabricating a strained structure and structure formed

Method for fabricating a strained structure and structure formed

Strained channel field effect transistor

Strain enhancement for FinFETs

Method for fabricating a strained structure and structure formed

Fin structure of fin field effect transistor

TAIWAN SEMICONDUCTOR MFG

FinFETs with multiple Fin heights

Method for fabricating a strained structure

FinFETs with multiple fin heights

FinFETs with multiple fin heights

Gate controlled bipolar junction transistor on fin-like field effect transistor (FinFET) structure

FinFETs with different fin height and EPI height setting

Voids in STI regions for forming bulk FinFETs

FinFETs with different fin height and EPI height setting

Multi-fin device by self-aligned castle fin formation

Forming inter-device STI regions and intra-device STI regions using different dielectric materials

Voids in STI regions for forming bulk FinFETs

LEE TSUNG-LIN

Strained structure of semiconductor device and method of making the strained structure

Gate structure for semiconductor device

Method for fabricating a strained structure

FinFETs with different fin heights

Sacrificial offset protection film for a FinFET device

Semiconductor device having a strained region

YUAN FENG

STI shape near fin bottom of Si fin in bulk FinFET

Voids in STI regions for forming bulk FinFETs

Forming inter-device STI regions and intra-device STI regions using different dielectric materials

GOOGLE INC

Techniques for predictive input method editors

Dynamically-generated selectable option icons

MICROSOFT CORP

Printing tree-described documents

Methods and systems for brush composition

VIVO MOBILE COMMUNICATION CO LTD

Mobile phone

Mobile phone

CHEN HSIN-CHIH

Multi-fin device by self-aligned castle fin formation

YANG FAN

Techniques for predictive input method editors

VAN DAL MARK

Strained channel field effect transistor

CHERVON HK LTD

Snowthrower

CHERVON IP LTD

Grass trimmer

MAYBEE PAUL

Debugging support for tasks in multithreaded environments

GOOGLE LLC

Conditionally assigning various automated assistant function(s) to interaction with a peripheral assistant control device

RAMASWAMY SUBRAMANIAN

Profile driven multicore background compilation

HEWLETT PACKARD DEVELOPMENT CO

Coalescence of device independent bitmaps for artifact avoidance