P

Inventor

BROOKS JOSEPH F

44 patents
⚠️ This page may combine multiple inventors who share the name “BROOKS JOSEPH F”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

32 patents
US7332401B2Feb 19, 2008

Method of fabricating an electrode structure for use in an integrated circuit

MICRON TECHNOLOGY INC53 citations96
US7795093B2Sep 14, 2010

Front-end processing of nickel plated bond pads

MICRON TECHNOLOGY INC9 citations93
US7619247B2Nov 17, 2009

Structure for amorphous carbon based non-volatile memory

MICRON TECHNOLOGY INC22 citations93
US7344946B2Mar 18, 2008

Structure for amorphous carbon based non-volatile memory

MICRON TECHNOLOGY INC24 citations93
US7315465B2Jan 1, 2008

Methods of operating and forming chalcogenide glass constant current devices

MICRON TECHNOLOGY INC12 citations93
US7288784B2Oct 30, 2007

Structure for amorphous carbon based non-volatile memory

MICRON TECHNOLOGY INC15 citations93
US7115504B2Oct 3, 2006

Method of forming electrode structure for use in an integrated circuit

MICRON TECHNOLOGY INC26 citations93
US6912147B2Jun 28, 2005

Chalcogenide glass constant current device, and its method of fabrication and operation

MICRON TECHNOLOGY INC13 citations93
US6867064B2Mar 15, 2005

Method to alter chalcogenide glass for improved switching characteristics

MICRON TECHNOLOGY INC26 citations93
US6815818B2Nov 9, 2004

Electrode structure for use in an integrated circuit

MICRON TECHNOLOGY INC21 citations93
US6813178B2Nov 2, 2004

Chalcogenide glass constant current device, and its method of fabrication and operation

MICRON TECHNOLOGY INC29 citations93
US7709885B2May 4, 2010

Access transistor for memory device

MICRON TECHNOLOGY INC20 citations92
US7701760B2Apr 20, 2010

Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication

MICRON TECHNOLOGY INC13 citations92
US7433227B2Oct 7, 2008

Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication

MICRON TECHNOLOGY INC14 citations92
US7277313B2Oct 2, 2007

Resistance variable memory element with threshold device and method of forming the same

MICRON TECHNOLOGY INC16 citations92
US7274034B2Sep 25, 2007

Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication

MICRON TECHNOLOGY INC12 citations92
US6861367B2Mar 1, 2005

Semiconductor processing method using photoresist and an antireflective coating

MICRON TECHNOLOGY INC32 citations92
US7579615B2Aug 25, 2009

Access transistor for memory device

MICRON TECHNOLOGY INC10 citations84
US7542319B2Jun 2, 2009

Chalcogenide glass constant current device, and its method of fabrication and operation

MICRON TECHNOLOGY INC9 citations84
US7289349B2Oct 30, 2007

Resistance variable memory element with threshold device and method of forming the same

MICRON TECHNOLOGY INC14 citations84
US7115992B2Oct 3, 2006

Electrode structure for use in an integrated circuit

MICRON TECHNOLOGY INC11 citations84
US7064080B2Jun 20, 2006

Semiconductor processing method using photoresist and an antireflective coating

MICRON TECHNOLOGY INC11 citations84
US7485948B2Feb 3, 2009

Front-end processing of nickel plated bond pads

MICRON TECHNOLOGY INC7 citations82
US8043961B2Oct 25, 2011

Method of forming a bond pad

MICRON TECHNOLOGY INC6 citations74
US7226857B2Jun 5, 2007

Front-end processing of nickel plated bond pads

MICRON TECHNOLOGY INC3 citations74
US7098068B2Aug 29, 2006

Method of forming a chalcogenide material containing device

MICRON TECHNOLOGY INC8 citations74
US7940556B2May 10, 2011

Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication

MICRON TECHNOLOGY INC2 citations63
US7709289B2May 4, 2010

Memory elements having patterned electrodes and method of forming the same

MICRON TECHNOLOGY INC5 citations63
US7691683B2Apr 6, 2010

Electrode structures and method to form electrode structures that minimize electrode work function variation

MICRON TECHNOLOGY INC2 citations63
US9177927B2Nov 3, 2015

Method of forming a memory device

MICRON TECHNOLOGY INC0 citations52
US7663133B2Feb 16, 2010

Memory elements having patterned electrodes and method of forming the same

MICRON TECHNOLOGY INC0 citations52
US7459336B2Dec 2, 2008

Method of forming a chalcogenide material containing device

MICRON TECHNOLOGY INC0 citations52

NAT UNION ELECTRIC CORP

4 patents

OVONYX MEMORY TECH LLC

4 patents

NAT UNION ELECTRIC CORPORATION

1 patent

MOORE JOHN

1 patent

DALEY JON

1 patent

OVONYX MEMORY TECHNOLOGY LLC

1 patent