Inventor
JIMENEZ JEAN
FR33 patents
⚠️ This page may combine multiple inventors who share the name “JIMENEZ JEAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SA
12 patentsUS6153453ANov 28, 2000
JFET transistor manufacturing method
ST MICROELECTRONICS SA39 citations92
US9401351B2Jul 26, 2016
Electronic device for ESD protection
ST MICROELECTRONICS SA12 citations90
US9997512B2Jun 12, 2018
Electronic device for ESD protection
ST MICROELECTRONICS SA3 citations71
US8907373B2Dec 9, 2014
Electronic device for protecting from electrostatic discharge
ST MICROELECTRONICS SA3 citations62
US8847275B2Sep 30, 2014
Electronic device for protection against electrostatic discharges, with a concentric structure
ST MICROELECTRONICS SA2 citations62
US11444077B2Sep 13, 2022
Electronic device for ESD protection
ST MICROELECTRONICS SA0 citations60
US9455247B2Sep 27, 2016
High-performance device for protection from electrostatic discharge
ST MICROELECTRONICS SA0 citations52
US9230950B2Jan 5, 2016
Method for producing an electronic device by assembling semi-conducting blocks and corresponding device
ST MICROELECTRONICS SA0 citations52
US9997907B2Jun 12, 2018
Device for protection against electrostatic discharges
ST MICROELECTRONICS SA0 citations51
US10515946B2Dec 24, 2019
Electronic device for ESD protection
ST MICROELECTRONICS SA0 citations50
US9899366B2Feb 20, 2018
Electronic device, in particular for protection against overvoltages
ST MICROELECTRONICS SA0 citations41
US9287254B2Mar 15, 2016
Electronic device and protection circuit
ST MICROELECTRONICS SA0 citations40
SGS THOMSON MICROELECTRONICS
9 patentsUS5567977AOct 22, 1996
Precision integrated resistor
SGS THOMSON MICROELECTRONICS21 citations92
US5515225AMay 7, 1996
Integrated circuit protected against electrostatic overvoltages
SGS THOMSON MICROELECTRONICS24 citations92
US5432368AJul 11, 1995
Pad protection diode structure
SGS THOMSON MICROELECTRONICS25 citations92
US5801078ASep 1, 1998
Method for manufacturing diffused channel insulated gate effect transistor
SGS THOMSON MICROELECTRONICS14 citations74
US5646433AJul 8, 1997
Pad protection diode structure
SGS THOMSON MICROELECTRONICS10 citations74
US5422298AJun 6, 1995
Method of manufacturing a precision integrated resistor
SGS THOMSON MICROELECTRONICS9 citations74
US5357126AOct 18, 1994
MOS transistor with an integrated protection zener diode
SGS THOMSON MICROELECTRONICS17 citations74
US5336920AAug 9, 1994
Buried avalanche diode having laterally adjacent semiconductor layers
SGS THOMSON MICROELECTRONICS10 citations74
US5543358AAug 6, 1996
Method for forming thin and thick metal layers
SGS THOMSON MICROELECTRONICS6 citations63
GALY PHILIPPE
4 patentsUS8829620B2Sep 9, 2014
Transistor with adjustable supply and/or threshold voltage
GALY PHILIPPE2 citations62
US8610216B2Dec 17, 2013
Structure for protecting an integrated circuit against electrostatic discharges
GALY PHILIPPE2 citations61
US9324703B2Apr 26, 2016
High-performance device for protection from electrostatic discharge
GALY PHILIPPE0 citations51
US8786989B2Jul 22, 2014
Electronic device comprising a buffer and means for protecting against electrostatic discharges
GALY PHILIPPE0 citations51
ST MICROELECTRONICS INT NV
3 patentsUS11658479B2May 23, 2023
Low leakage MOSFET supply clamp for electrostatic discharge (ESD) protection
ST MICROELECTRONICS INT NV0 citations58
US11063429B2Jul 13, 2021
Low leakage MOSFET supply clamp for electrostatic discharge (ESD) protection
ST MICROELECTRONICS INT NV1 citations58
US10944257B2Mar 9, 2021
Integrated silicon controlled rectifier (SCR) and a low leakage SCR supply clamp for electrostatic discharge (ESP) protection
ST MICROELECTRONICS INT NV0 citations49