Inventor
MATLOUBIAN MISHEL
US21 patents
⚠️ This page may combine multiple inventors who share the name “MATLOUBIAN MISHEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEXAS INSTRUMENTS INC
11 patentsUS5144390ASep 1, 1992
Silicon-on insulator transistor with internal body node to source node connection
TEXAS INSTRUMENTS INC187 citations98
US4956307ASep 11, 1990
Thin oxide sidewall insulators for silicon-over-insulator transistors
TEXAS INSTRUMENTS INC282 citations98
US4753896AJun 28, 1988
Sidewall channel stop process
TEXAS INSTRUMENTS INC215 citations98
US5283457AFeb 1, 1994
Semiconductor on insulator transistor
TEXAS INSTRUMENTS INC70 citations96
US5026656AJun 25, 1991
MOS transistor with improved radiation hardness
TEXAS INSTRUMENTS INC32 citations91
US4994869AFeb 19, 1991
NMOS transistor having inversion layer source/drain contacts
TEXAS INSTRUMENTS INC26 citations91
US4974051ANov 27, 1990
MOS transistor with improved radiation hardness
TEXAS INSTRUMENTS INC32 citations91
US4863878ASep 5, 1989
Method of making silicon on insalator material using oxygen implantation
TEXAS INSTRUMENTS INC26 citations89
US4950618AAug 21, 1990
Masking scheme for silicon dioxide mesa formation
TEXAS INSTRUMENTS INC14 citations74
US5399519AMar 21, 1995
Method of manufacturing semiconductor on insulator transistor with complementary transistor coupled to the channel
TEXAS INSTRUMENTS INC2 citations62
US5047361ASep 10, 1991
NMOS transistor having inversion layer source/drain contacts
TEXAS INSTRUMENTS INC6 citations61
QUALCOMM INC
5 patentsUS11682632B2Jun 20, 2023
Integrated device comprising periphery structure configured as an electrical guard ring and a crack stop
QUALCOMM INC2 citations73
US12455255B2Oct 28, 2025
CMOS integrated humidity sensor with built-in heater
QUALCOMM INC0 citations61
US12322461B2Jun 3, 2025
Dielectric film based one-time programmable (OTP) memory cell
QUALCOMM INC0 citations52
US12228538B2Feb 18, 2025
Moisture sensor having integrated heating element
QUALCOMM INC0 citations52
US11948978B2Apr 2, 2024
Field-effect transistors (FETs) employing edge transistor current leakage suppression to reduce FET current leakage
QUALCOMM INC0 citations52
CONEXANT SYSTEMS INC
4 patentsUS6588002B1Jul 1, 2003
Method and system for predictive layout generation for inductors with reduced design cycle
CONEXANT SYSTEMS INC63 citations92
US6518604B1Feb 11, 2003
Diode with variable width metal stripes for improved protection against electrostatic discharge (ESD) current failure
CONEXANT SYSTEMS INC32 citations92
US6728942B2Apr 27, 2004
Method and system for predictive MOSFET layout generation with reduced design cycle
CONEXANT SYSTEMS INC27 citations90
US6839887B1Jan 4, 2005
Method and system for predictive multi-component circuit layout generation with reduced design cycle
CONEXANT SYSTEMS INC12 citations79