Inventor

PARK HEEMYONG

US19 patents

⚠️ This page may combine multiple inventors who share the name “PARK HEEMYONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PARK HEEMYONG

IBM

Forming steep lateral doping distribution at source/drain junctions

MOS transistors with raised sources and drains

CMOS device structures and method of making same

CMOS device on ultrathin SOI with a deposited raised source/drain, and a method of manufacture

CMOS device on ultrathin SOI with a deposited raised source/drain, and a method of manufacture

CMOS structure with non-epitaxial raised source/drain and self-aligned gate and method of manufacture

Integrated circuits with reduced substrate capacitance

Process for fabricating an MOS device having highly-localized halo regions

Method of building a CMOS structure on thin SOI with source/drain electrodes formed by in situ doped selective amorphous silicon

CMOS structure with maximized polysilicon gate activation and a method for selectively maximizing doping activation in gate, extension, and source/drain regions

Method of building a CMOS structure on thin SOI with source/drain electrodes formed by in situ doped selective amorphous silicon

MOTOROLA INC

Method of manufacturing vertical semiconductor device

Vertical semiconductor device

Method of manufacturing an insulated gate semiconductor device having a spacer extension

Reduced stress isolation for SOI devices and a method for fabricating

Method of forming an isolation oxide for silicon-on-insulator technology

Insulated gate semiconductor device and method of manufacture

Vertical semiconductor device and method of manufacturing the same

Insulated gate semiconductor device