Inventor
PARK JIN-JUN
KR23 patents
⚠️ This page may combine multiple inventors who share the name “PARK JIN-JUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
21 patentsUS7648883B2Jan 19, 2010
Phosphorous doping methods of manufacturing field effect transistors having multiple stacked channels
SAMSUNG ELECTRONICS CO LTD31 citations92
US7309635B2Dec 18, 2007
Phosphorous doping methods of manufacturing field effect transistors having multiple stacked channels
SAMSUNG ELECTRONICS CO LTD16 citations92
US7229884B2Jun 12, 2007
Phosphorous doping methods of manufacturing field effect transistors having multiple stacked channels
SAMSUNG ELECTRONICS CO LTD32 citations92
US7052576B2May 30, 2006
Pressure control apparatus and method of establishing a desired level of pressure within at least one processing chamber
SAMSUNG ELECTRONICS CO LTD20 citations92
US6960507B2Nov 1, 2005
Vertical double-channel silicon-on-insulator transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD42 citations92
US7432155B2Oct 7, 2008
Methods of forming a recessed gate
SAMSUNG ELECTRONICS CO LTD17 citations84
US7262462B2Aug 28, 2007
Vertical double-channel silicon-on-insulator transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD13 citations84
US7211482B2May 1, 2007
Method of forming a memory cell having self-aligned contact regions
SAMSUNG ELECTRONICS CO LTD10 citations84
US7491292B2Feb 17, 2009
Apparatus for catching byproducts in semiconductor device fabrication equipment
SAMSUNG ELECTRONICS CO LTD8 citations82
US7575971B2Aug 18, 2009
Semiconductor device having a capacitor with a stepped cylindrical structure and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US7227215B2Jun 5, 2007
Semiconductor device having a capacitor with a stepped cylindrical structure and method of manufacturing same
SAMSUNG ELECTRONICS CO LTD5 citations74
US7091540B2Aug 15, 2006
Recess transistor (TR) gate to obtain large self-aligned contact (SAC) open margin
SAMSUNG ELECTRONICS CO LTD8 citations74
US7685963B2Mar 30, 2010
Method of and apparatus for dispensing photoresist in manufacturing semiconductor devices or the like
SAMSUNG ELECTRONICS CO LTD7 citations69
US7872290B2Jan 18, 2011
Recess transistor (TR) gate to obtain large self-aligned contact (SAC) open margin
SAMSUNG ELECTRONICS CO LTD2 citations63
US7897424B2Mar 1, 2011
Method of manufacturing an electrical-mechanical memory device
SAMSUNG ELECTRONICS CO LTD5 citations62
US7491291B2Feb 17, 2009
Apparatus for trapping residual products in semiconductor device fabrication equipment
SAMSUNG ELECTRONICS CO LTD4 citations62
US6757052B2Jun 29, 2004
Single aperture optical system for photolithography systems
SAMSUNG ELECTRONICS CO LTD3 citations61
US7785964B2Aug 31, 2010
Non-volatile semiconductor memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations59
US7894062B2Feb 22, 2011
Overlay measuring method and overlay measuring apparatus using the same
SAMSUNG ELECTRONICS CO LTD5 citations54
US7635410B2Dec 22, 2009
Apparatus for dispensing photo-resist in semiconductor device fabrication equipment
SAMSUNG ELECTRONICS CO LTD6 citations54
US7663902B2Feb 16, 2010
Memory device in which data is written or read by a switching operation of a bit line that is inserted into a trench formed between a plurality of word lines
SAMSUNG ELECTRONICS CO LTD1 citations52