Inventor
HILL CHRIS W
US24 patents
⚠️ This page may combine multiple inventors who share the name “HILL CHRIS W”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
21 patentsUS6930058B2Aug 16, 2005
Method of depositing a silicon dioxide comprising layer doped with at least one of P, B and Ge
MICRON TECHNOLOGY INC88 citations98
US7157385B2Jan 2, 2007
Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry
MICRON TECHNOLOGY INC16 citations92
US7329576B2Feb 12, 2008
Double-sided container capacitors using a sacrificial layer
MICRON TECHNOLOGY INC9 citations84
US6596641B2Jul 22, 2003
Chemical vapor deposition methods
MICRON TECHNOLOGY INC13 citations84
US7667258B2Feb 23, 2010
Double-sided container capacitors using a sacrificial layer
MICRON TECHNOLOGY INC5 citations74
US6175155B1Jan 16, 2001
Selectively formed contact structure
MICRON TECHNOLOGY INC11 citations73
US6100186AAug 8, 2000
Method of selectively forming a contact in a contact hole
MICRON TECHNOLOGY INC5 citations73
US7470632B2Dec 30, 2008
Method of depositing a silicon dioxide comprising layer doped with at least one of P, B and Ge
MICRON TECHNOLOGY INC2 citations63
US7429541B2Sep 30, 2008
Method of forming trench isolation in the fabrication of integrated circuitry
MICRON TECHNOLOGY INC1 citations63
US6982228B2Jan 3, 2006
Methods of etching a contact opening over a node location on a semiconductor substrate
MICRON TECHNOLOGY INC2 citations63
US6828252B2Dec 7, 2004
Method of etching a contact opening
MICRON TECHNOLOGY INC2 citations63
US6940171B2Sep 6, 2005
Multi-layer dielectric and method of forming same
MICRON TECHNOLOGY INC4 citations62
US6905956B2Jun 14, 2005
Multi-layer dielectric and method of forming same
MICRON TECHNOLOGY INC3 citations62
US6787877B2Sep 7, 2004
Method for filling structural gaps and integrated circuitry
MICRON TECHNOLOGY INC2 citations62
US6433378B1Aug 13, 2002
Integrated circuits having material within structural gaps
MICRON TECHNOLOGY INC3 citations62
US6384466B1May 7, 2002
Multi-layer dielectric and method of forming same
MICRON TECHNOLOGY INC2 citations62
US6171948B1Jan 9, 2001
Method for filling structural gaps and intergrated circuitry
MICRON TECHNOLOGY INC3 citations62
US7361614B2Apr 22, 2008
Method of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry
MICRON TECHNOLOGY INC0 citations52
US7250378B2Jul 31, 2007
Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry
MICRON TECHNOLOGY INC0 citations52
US7250380B2Jul 31, 2007
Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry
MICRON TECHNOLOGY INC0 citations52
US6500730B1Dec 31, 2002
Method for filling structural gaps and integrated circuitry
MICRON TECHNOLOGY INC0 citations52
HILL CHRIS W
3 patentsUS8158488B2Apr 17, 2012
Method of increasing deposition rate of silicon dioxide on a catalyst
HILL CHRIS W3 citations61
US8110891B2Feb 7, 2012
Method of increasing deposition rate of silicon dioxide on a catalyst
HILL CHRIS W1 citations61
US8470686B2Jun 25, 2013
Method of increasing deposition rate of silicon dioxide on a catalyst
HILL CHRIS W0 citations50