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Inventor

HILL CHRIS W

US24 patents
⚠️ This page may combine multiple inventors who share the name “HILL CHRIS W”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

21 patents
US6930058B2Aug 16, 2005

Method of depositing a silicon dioxide comprising layer doped with at least one of P, B and Ge

MICRON TECHNOLOGY INC88 citations98
US7157385B2Jan 2, 2007

Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry

MICRON TECHNOLOGY INC16 citations92
US7329576B2Feb 12, 2008

Double-sided container capacitors using a sacrificial layer

MICRON TECHNOLOGY INC9 citations84
US6596641B2Jul 22, 2003

Chemical vapor deposition methods

MICRON TECHNOLOGY INC13 citations84
US7667258B2Feb 23, 2010

Double-sided container capacitors using a sacrificial layer

MICRON TECHNOLOGY INC5 citations74
US6175155B1Jan 16, 2001

Selectively formed contact structure

MICRON TECHNOLOGY INC11 citations73
US6100186AAug 8, 2000

Method of selectively forming a contact in a contact hole

MICRON TECHNOLOGY INC5 citations73
US7470632B2Dec 30, 2008

Method of depositing a silicon dioxide comprising layer doped with at least one of P, B and Ge

MICRON TECHNOLOGY INC2 citations63
US7429541B2Sep 30, 2008

Method of forming trench isolation in the fabrication of integrated circuitry

MICRON TECHNOLOGY INC1 citations63
US6982228B2Jan 3, 2006

Methods of etching a contact opening over a node location on a semiconductor substrate

MICRON TECHNOLOGY INC2 citations63
US6828252B2Dec 7, 2004

Method of etching a contact opening

MICRON TECHNOLOGY INC2 citations63
US6940171B2Sep 6, 2005

Multi-layer dielectric and method of forming same

MICRON TECHNOLOGY INC4 citations62
US6905956B2Jun 14, 2005

Multi-layer dielectric and method of forming same

MICRON TECHNOLOGY INC3 citations62
US6787877B2Sep 7, 2004

Method for filling structural gaps and integrated circuitry

MICRON TECHNOLOGY INC2 citations62
US6433378B1Aug 13, 2002

Integrated circuits having material within structural gaps

MICRON TECHNOLOGY INC3 citations62
US6384466B1May 7, 2002

Multi-layer dielectric and method of forming same

MICRON TECHNOLOGY INC2 citations62
US6171948B1Jan 9, 2001

Method for filling structural gaps and intergrated circuitry

MICRON TECHNOLOGY INC3 citations62
US7361614B2Apr 22, 2008

Method of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry

MICRON TECHNOLOGY INC0 citations52
US7250378B2Jul 31, 2007

Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry

MICRON TECHNOLOGY INC0 citations52
US7250380B2Jul 31, 2007

Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry

MICRON TECHNOLOGY INC0 citations52
US6500730B1Dec 31, 2002

Method for filling structural gaps and integrated circuitry

MICRON TECHNOLOGY INC0 citations52

HILL CHRIS W

3 patents