P

Inventor

BANGSARUNTIP SARUNYA

US74 patents
⚠️ This page may combine multiple inventors who share the name “BANGSARUNTIP SARUNYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BANGSARUNTIP SARUNYA

31 patents
US8936972B2Jan 20, 2015

Epitaxially thickened doped or undoped core nanowire FET structure and method for increasing effective device width

BANGSARUNTIP SARUNYA29 citations94
US8809131B2Aug 19, 2014

Replacement gate fin first wire last gate all around devices

BANGSARUNTIP SARUNYA35 citations94
US8580624B2Nov 12, 2013

Nanowire FET and finFET hybrid technology

BANGSARUNTIP SARUNYA36 citations94
US9029834B2May 12, 2015

Process for forming a surrounding gate for a nanowire using a sacrificial patternable dielectric

BANGSARUNTIP SARUNYA22 citations93
US8586966B2Nov 19, 2013

Contacts for nanowire field effect transistors

BANGSARUNTIP SARUNYA19 citations93
US8541774B2Sep 24, 2013

Hybrid CMOS technology with nanowire devices and double gated planar devices

BANGSARUNTIP SARUNYA18 citations93
US8455334B2Jun 4, 2013

Planar and nanowire field effect transistors

BANGSARUNTIP SARUNYA19 citations93
US8441043B2May 14, 2013

Maskless process for suspending and thinning nanowires

BANGSARUNTIP SARUNYA23 citations93
US8420455B2Apr 16, 2013

Generation of multiple diameter nanowire field effect transistors

BANGSARUNTIP SARUNYA17 citations93
US8324030B2Dec 4, 2012

Nanowire tunnel field effect transistors

BANGSARUNTIP SARUNYA17 citations93
US8324940B2Dec 4, 2012

Nanowire circuits in matched devices

BANGSARUNTIP SARUNYA18 citations93
US8173993B2May 8, 2012

Gate-all-around nanowire tunnel field effect transistors

BANGSARUNTIP SARUNYA35 citations93
US8097515B2Jan 17, 2012

Self-aligned contacts for nanowire field effect transistors

BANGSARUNTIP SARUNYA36 citations93
US8921825B2Dec 30, 2014

Nanowire field effect transistor device

BANGSARUNTIP SARUNYA6 citations84
US8716072B2May 6, 2014

Hybrid CMOS technology with nanowire devices and double gated planar devices

BANGSARUNTIP SARUNYA7 citations84
US8685823B2Apr 1, 2014

Nanowire field effect transistor device

BANGSARUNTIP SARUNYA6 citations84
US8564025B2Oct 22, 2013

Nanowire FET having induced radial strain

BANGSARUNTIP SARUNYA6 citations84
US8536563B2Sep 17, 2013

Nanowire field effect transistors

BANGSARUNTIP SARUNYA5 citations84
US8519479B2Aug 27, 2013

Generation of multiple diameter nanowire field effect transistors

BANGSARUNTIP SARUNYA5 citations84
US8313990B2Nov 20, 2012

Nanowire FET having induced radial strain

BANGSARUNTIP SARUNYA6 citations84
US8309991B2Nov 13, 2012

Nanowire FET having induced radial strain

BANGSARUNTIP SARUNYA7 citations84
US8241971B2Aug 14, 2012

MOSFET with a nanowire channel and fully silicided (FUSI) wrapped around gate

BANGSARUNTIP SARUNYA8 citations84
US8143113B2Mar 27, 2012

Omega shaped nanowire tunnel field effect transistors fabrication

BANGSARUNTIP SARUNYA10 citations84
US8129247B2Mar 6, 2012

Omega shaped nanowire field effect transistors

BANGSARUNTIP SARUNYA12 citations84
US8722492B2May 13, 2014

Nanowire pin tunnel field effect devices

BANGSARUNTIP SARUNYA6 citations82
US8614434B2Dec 24, 2013

MOSFET with a nanowire channel and fully silicided (FUSI) wrapped around gate

BANGSARUNTIP SARUNYA4 citations74
US8648330B2Feb 11, 2014

Nanowire field effect transistors

BANGSARUNTIP SARUNYA4 citations73
US8513068B2Aug 20, 2013

Nanowire field effect transistors

BANGSARUNTIP SARUNYA5 citations73
US8445337B2May 21, 2013

Generation of multiple diameter nanowire field effect transistors

BANGSARUNTIP SARUNYA5 citations73
US9343142B2May 17, 2016

Nanowire floating gate transistor

BANGSARUNTIP SARUNYA2 citations63
US9184301B2Nov 10, 2015

Planar and nanowire field effect transistors

BANGSARUNTIP SARUNYA3 citations63

IBM

13 patents

SLEIGHT JEFFREY W

3 patents

INTERNAT BUSINESS MACHIENS COR

1 patent

SCHROTT ALEJANDRO G

1 patent

GLOBALFOUNDRIES INC

1 patent

Showing the top 50 of 74 patents by PatentIndex Score.