Inventor
BANGSARUNTIP SARUNYA
US74 patents
⚠️ This page may combine multiple inventors who share the name “BANGSARUNTIP SARUNYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
BANGSARUNTIP SARUNYA
31 patentsUS8936972B2Jan 20, 2015
Epitaxially thickened doped or undoped core nanowire FET structure and method for increasing effective device width
BANGSARUNTIP SARUNYA29 citations94
US8809131B2Aug 19, 2014
Replacement gate fin first wire last gate all around devices
BANGSARUNTIP SARUNYA35 citations94
US8580624B2Nov 12, 2013
Nanowire FET and finFET hybrid technology
BANGSARUNTIP SARUNYA36 citations94
US9029834B2May 12, 2015
Process for forming a surrounding gate for a nanowire using a sacrificial patternable dielectric
BANGSARUNTIP SARUNYA22 citations93
US8586966B2Nov 19, 2013
Contacts for nanowire field effect transistors
BANGSARUNTIP SARUNYA19 citations93
US8541774B2Sep 24, 2013
Hybrid CMOS technology with nanowire devices and double gated planar devices
BANGSARUNTIP SARUNYA18 citations93
US8455334B2Jun 4, 2013
Planar and nanowire field effect transistors
BANGSARUNTIP SARUNYA19 citations93
US8441043B2May 14, 2013
Maskless process for suspending and thinning nanowires
BANGSARUNTIP SARUNYA23 citations93
US8420455B2Apr 16, 2013
Generation of multiple diameter nanowire field effect transistors
BANGSARUNTIP SARUNYA17 citations93
US8324030B2Dec 4, 2012
Nanowire tunnel field effect transistors
BANGSARUNTIP SARUNYA17 citations93
US8324940B2Dec 4, 2012
Nanowire circuits in matched devices
BANGSARUNTIP SARUNYA18 citations93
US8173993B2May 8, 2012
Gate-all-around nanowire tunnel field effect transistors
BANGSARUNTIP SARUNYA35 citations93
US8097515B2Jan 17, 2012
Self-aligned contacts for nanowire field effect transistors
BANGSARUNTIP SARUNYA36 citations93
US8921825B2Dec 30, 2014
Nanowire field effect transistor device
BANGSARUNTIP SARUNYA6 citations84
US8716072B2May 6, 2014
Hybrid CMOS technology with nanowire devices and double gated planar devices
BANGSARUNTIP SARUNYA7 citations84
US8685823B2Apr 1, 2014
Nanowire field effect transistor device
BANGSARUNTIP SARUNYA6 citations84
US8564025B2Oct 22, 2013
Nanowire FET having induced radial strain
BANGSARUNTIP SARUNYA6 citations84
US8536563B2Sep 17, 2013
Nanowire field effect transistors
BANGSARUNTIP SARUNYA5 citations84
US8519479B2Aug 27, 2013
Generation of multiple diameter nanowire field effect transistors
BANGSARUNTIP SARUNYA5 citations84
US8313990B2Nov 20, 2012
Nanowire FET having induced radial strain
BANGSARUNTIP SARUNYA6 citations84
US8309991B2Nov 13, 2012
Nanowire FET having induced radial strain
BANGSARUNTIP SARUNYA7 citations84
US8241971B2Aug 14, 2012
MOSFET with a nanowire channel and fully silicided (FUSI) wrapped around gate
BANGSARUNTIP SARUNYA8 citations84
US8143113B2Mar 27, 2012
Omega shaped nanowire tunnel field effect transistors fabrication
BANGSARUNTIP SARUNYA10 citations84
US8129247B2Mar 6, 2012
Omega shaped nanowire field effect transistors
BANGSARUNTIP SARUNYA12 citations84
US8722492B2May 13, 2014
Nanowire pin tunnel field effect devices
BANGSARUNTIP SARUNYA6 citations82
US8614434B2Dec 24, 2013
MOSFET with a nanowire channel and fully silicided (FUSI) wrapped around gate
BANGSARUNTIP SARUNYA4 citations74
US8648330B2Feb 11, 2014
Nanowire field effect transistors
BANGSARUNTIP SARUNYA4 citations73
US8513068B2Aug 20, 2013
Nanowire field effect transistors
BANGSARUNTIP SARUNYA5 citations73
US8445337B2May 21, 2013
Generation of multiple diameter nanowire field effect transistors
BANGSARUNTIP SARUNYA5 citations73
US9343142B2May 17, 2016
Nanowire floating gate transistor
BANGSARUNTIP SARUNYA2 citations63
US9184301B2Nov 10, 2015
Planar and nanowire field effect transistors
BANGSARUNTIP SARUNYA3 citations63
IBM
13 patentsUS7795677B2Sep 14, 2010
Nanowire field-effect transistors
IBM146 citations99
US7884004B2Feb 8, 2011
Maskless process for suspending and thinning nanowires
IBM51 citations98
US8384065B2Feb 26, 2013
Gate-all-around nanowire field effect transistors
IBM34 citations93
US9064942B2Jun 23, 2015
Nanowire capacitor for bidirectional operation
IBM13 citations84
US8809957B2Aug 19, 2014
Nanowire FET and FinFET hybrid technology
IBM14 citations84
US8008146B2Aug 30, 2011
Different thickness oxide silicon nanowire field effect transistors
IBM17 citations84
US7816275B1Oct 19, 2010
Gate patterning of nano-channel devices
IBM13 citations84
US10546924B2Jan 28, 2020
Fabrication of nanomaterial T-gate transistors with charge transfer doping layer
IBM3 citations73
US9748334B1Aug 29, 2017
Fabrication of nanomaterial T-gate transistors with charge transfer doping layer
IBM4 citations73
US9035383B2May 19, 2015
Nanowire capacitor for bidirectional operation
IBM5 citations73
US11857997B2Jan 2, 2024
Metal surface protection
IBM2 citations71
US11515461B2Nov 29, 2022
Superconductor devices having buried quasiparticle traps
IBM0 citations63
US9514937B2Dec 6, 2016
Tapered nanowire structure with reduced off current
IBM2 citations63
SLEIGHT JEFFREY W
3 patentsUS8829625B2Sep 9, 2014
Nanowire FET with trapezoid gate structure
SLEIGHT JEFFREY W11 citations84
US8575009B2Nov 5, 2013
Two-step hydrogen annealing process for creating uniform non-planar semiconductor devices at aggressive pitch
SLEIGHT JEFFREY W9 citations84
US8298881B2Oct 30, 2012
Nanowire FET with trapezoid gate structure
SLEIGHT JEFFREY W11 citations84
INTERNAT BUSINESS MACHIENS COR
1 patentSCHROTT ALEJANDRO G
1 patentGLOBALFOUNDRIES INC
1 patentShowing the top 50 of 74 patents by PatentIndex Score.