Inventor

TERAI MASAYUKI

KR36 patents

⚠️ This page may combine multiple inventors who share the name “TERAI MASAYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TERAI MASAYUKI

SAMSUNG ELECTRONICS CO LTD

Memory device including ovonic threshold switch adjusting threshold voltage thereof

Memory device including ovonic threshold switch adjusting threshold voltage thereof

Semiconductor memory device having three-dimensional cross point array

Memory devices and methods of manufacturing the same

Memory device and method of fabricating the same

Resistive memory device having asymmetric diode structure

Method of fabricating a variable reistance memory device

Memory device and method of fabricating the same

Semiconductor device having data storage pattern

Variable resistance memory devices

Resistive memory device

Methods of fabricating memory devices

Method of manufacturing memory device

Semiconductor device and method for fabricating the same

Variable resistance memory devices and methods of manufacturing the same

Variable resistance memory device

TERAI MASAYUKI

Resistance change nonvolatile memory device, semiconductor device, and method of operating resistance change nonvolatile memory device

Semiconductor device

Resistance change nonvolatile memory device, semiconductor device, and method of manufacturing resistance change nonvolatile memory device

Memory devices having low permittivity layers and methods of fabricating the same

Semiconductor device

Semiconductor storage device, memory cell array, and a fabrication method and drive method of a semiconductor storage device

Nonvolatile memory device

Semiconductor device, and its manufacturing method

RENESAS ELECTRONICS CORP

Resistance change nonvolatile memory device, semiconductor device, and method of manufacturing resistance change nonvolatile memory device

Semiconductor device including a variable resistance device, and method of controlling the semiconductor device

Resistance change memory and forming method of the resistance change device

NEC ELECTRONICS CORP

Semiconductor device having high dielectric constant layers of different thicknesses

Semiconductor memory device, method of driving the same and method of manufacturing the same

MITSUBISHI ELECTRIC CORP

Interconnection area decision processor

NEC CORP

Semiconductor device and method of producing the same including a charge accumulation layer with differing charge trap surface density

SAKOTSUBO YUKIHIRO

Semiconductor device with variable resistance element and method for manufacturing the same

MATSUDAIRA MASAHARU

Semiconductor memory device, semiconductor device and method of manufacturing semiconductor memory device

LEE JIN-WOO

Variable resistance memory devices and methods of manufacturing the same

KANG YOUNSEON

Variable resistance memory device

SAITOH MOTOFUMI

Semiconductor device and method of controlling semiconductor device