P

Inventor

CHATTERJEE PALLAB K

38 patents
⚠️ This page may combine multiple inventors who share the name “CHATTERJEE PALLAB K”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TEXAS INSTRUMENTS INC

33 patents
US5208657AMay 4, 1993

DRAM Cell with trench capacitor and vertical channel in substrate

TEXAS INSTRUMENTS INC185 citations99
US4673962AJun 16, 1987

Vertical DRAM cell and method

TEXAS INSTRUMENTS INC262 citations99
US5393690AFeb 28, 1995

Method of making semiconductor having improved interlevel conductor insulation

TEXAS INSTRUMENTS INC69 citations96
US5102817AApr 7, 1992

Vertical DRAM cell and method

TEXAS INSTRUMENTS INC116 citations96
US4889832ADec 26, 1989

Method of fabricating an integrated circuit with metal interconnecting layers above and below active circuitry

TEXAS INSTRUMENTS INC59 citations96
US4740826AApr 26, 1988

Vertical inverter

TEXAS INSTRUMENTS INC108 citations96
US4695872ASep 22, 1987

High density micropackage for IC chips

TEXAS INSTRUMENTS INC54 citations96
US4554572ANov 19, 1985

Self-aligned stacked CMOS

TEXAS INSTRUMENTS INC59 citations96
US4384301AMay 17, 1983

High performance submicron metal-oxide-semiconductor field effect transistor device structure

TEXAS INSTRUMENTS INC62 citations96
US4112575ASep 12, 1978

Fabrication methods for the high capacity ram cell

TEXAS INSTRUMENTS INC57 citations96
US4855809AAug 8, 1989

Orthogonal chip mount system module and method

TEXAS INSTRUMENTS INC73 citations93
US4982266AJan 1, 1991

Integrated circuit with metal interconnecting layers above and below active circuitry

TEXAS INSTRUMENTS INC51 citations92
US4683486AJul 28, 1987

dRAM cell and array

TEXAS INSTRUMENTS INC50 citations92
US4356040AOct 26, 1982

Semiconductor device having improved interlevel conductor insulation

TEXAS INSTRUMENTS INC32 citations92
US4291391ASep 22, 1981

Taper isolated random access memory array and method of operating

TEXAS INSTRUMENTS INC52 citations92
US4153904AMay 8, 1979

Semiconductor device having a high breakdown voltage junction characteristic

TEXAS INSTRUMENTS INC31 citations92
US4810906AMar 7, 1989

Vertical inverter circuit

TEXAS INSTRUMENTS INC22 citations82
US4788158ANov 29, 1988

Method of making vertical inverter

TEXAS INSTRUMENTS INC20 citations82
US4268950AMay 26, 1981

Post-metal ion implant programmable MOS read only memory

TEXAS INSTRUMENTS INC28 citations82
US4918658AApr 17, 1990

Static random access memory with asynchronous power-down

TEXAS INSTRUMENTS INC15 citations74
US4591891AMay 27, 1986

Post-metal electron beam programmable MOS read only memory

TEXAS INSTRUMENTS INC8 citations74
US4353082AOct 5, 1982

Buried sense line V-groove MOS random access memory

TEXAS INSTRUMENTS INC10 citations74
US4272303AJun 9, 1981

Method of making post-metal ion beam programmable MOS read only memory

TEXAS INSTRUMENTS INC10 citations74
US4228445AOct 14, 1980

Dual plane well-type two-phase ccd

TEXAS INSTRUMENTS INC14 citations74
US4227202AOct 7, 1980

Dual plane barrier-type two-phase CCD

TEXAS INSTRUMENTS INC11 citations74
US5202574AApr 13, 1993

Semiconductor having improved interlevel conductor insulation

TEXAS INSTRUMENTS INC15 citations73
US4604727AAug 5, 1986

Memory with configuration RAM

TEXAS INSTRUMENTS INC13 citations73
US4379306AApr 5, 1983

Non-coplanar barrier-type charge coupled device with enhanced storage capacity and reduced leakage current

TEXAS INSTRUMENTS INC9 citations73
US4365261ADec 21, 1982

Co-planar barrier-type charge coupled device with enhanced storage capacity and decreased leakage current

TEXAS INSTRUMENTS INC8 citations73
US4328511AMay 4, 1982

Taper isolated ram cell without gate oxide

TEXAS INSTRUMENTS INC4 citations63
US4203125AMay 13, 1980

Buried storage punch through dynamic ram cell

TEXAS INSTRUMENTS INC3 citations61
US4152779AMay 1, 1979

MOS ram cell having improved refresh time

TEXAS INSTRUMENTS INC4 citations60
US4364076ADec 14, 1982

Co-planar well-type charge coupled device with enhanced storage capacity and reduced leakage current

TEXAS INSTRUMENTS INC1 citations51

I2 TECHNOLOGIES US INC

3 patents

RANGADASS VASUDEV

1 patent

CHATTERJEE PALLAB K

1 patent