Inventor

KANG MYUNG GIL

KR63 patents

⚠️ This page may combine multiple inventors who share the name “KANG MYUNG GIL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KANG MYUNG GIL

SAMSUNG ELECTRONICS CO LTD

Semiconductor devices with layers commonly contacting fins and methods of manufacturing the same

Semiconductor device including superlattice pattern

Integrated circuit devices and fabricating method thereof

Integrated circuit (IC) device

Vertical fin field effect transistor (V-FinFET), semiconductor device having V-FinFET and method of fabricating V-FinFET

Semiconductor device having a plurality of channel layers and method of manufacturing the same

Semiconductor device having a plurality of channel layers and method of manufacturing the same

Integrated circuit (IC) device

Integrated circuit (IC) device

Integrated circuit (IC) device

Integrated circuit including integrated standard cell structure

Semiconductor device

Semiconductor devices

Semiconductor devices

Fabricating method of nanosheet transistor spacer including inner spacer

Method of fabricating integrated circuit devices

Semiconductor device and method of fabricating the same

Semiconductor devices

Semiconductor devices and inverter having the same

Vertical field effect transistor having two-dimensional channel structure

Resistor formed using resistance patterns and semiconductor devices including the same

Field effect transistors including fin structures with different doped regions and semiconductor devices including the same

Integrated circuit devices

Semiconductor devices incorporating semiconductor layer configurations and methods of manufacturing the same

Semiconductor device

Semiconductor device and method of fabricating the same where semiconductor device includes high-k dielectric layer that does not extend between inhibition layer and side of gate electrode

Semiconductor devices

Semiconductor device-including source and drain regions and superlattice pattern having a pillar shape

Semiconductor device

Semiconductor device having a plurality of channel layers and method of manufacturing the same

Semiconductor devices

Semiconductor device including superlattice pattern

Semiconductor devices

Semiconductor devices

Semiconductor devices

Integrated circuit including integrated standard cell structure

Semiconductor devices

Semiconductor devices with layers commonly contacting fins and methods of manufacturing the same

Semiconductor device

Method of manufacturing semiconductor device having a plurality of channel layers

Vertical fin field effect transistor (V-FinFET), semiconductor device having V-FinFET and method of fabricating V-FinFET

Vertical field effect transistor having two-dimensional channel structure

Method and apparatus for controlling interference in communication system using multiple antennas

Semiconductor device and method of fabricating the same

Semiconductor device

Semiconductor device

Method and apparatus for adaptive beam hopping in multi cell multi user communication system

OH CHANG-WOO

Integrated circuit devices including stress proximity effects and methods of fabricating the same

KANG MYUNG GIL

Fin field effect transistors including multiple lattice constants and methods of fabricating the same

SHIN WON JAE

Apparatus and method for hierarchical rate splitting in hierarchical cell communication system