Inventor

ANDERSON TRAVIS J

US45 patents

⚠️ This page may combine multiple inventors who share the name “ANDERSON TRAVIS J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ANDERSON TRAVIS J

US GOV SEC NAVY

GaN devices with ion implanted ohmic contacts and method of fabricating devices incorporating the same

GaN devices with ion implanted ohmic contacts and method of fabricating devices incorporating the same

Mapping and evaluating GaN wafers for vertical device applications

Light controlled switch module

Wafer-scale separation and transfer of GaN material

Neural network based prediction of semiconductor device response

Heterojunction devices and methods for fabricating the same

High electron mobility transistors and methods for fabricating the same

Heterojunction devices and methods for fabricating the same

GaN devices with ion implanted ohmic contacts and method of fabricating devices incorporating the same

Low resistance photoconductive semiconductor switch (PCSS)

Diamond on nanopatterned substrate

Diamond on nanopatterned substrate

Multi-layer hybrid edge termination for III-N power devices

Transferring large-area group III-nitride semiconductor material and devices to arbitrary substrates

Selective area diffusion doping of III-N materials

Diamond air bridge for thermal management of high power devices

Growth of crystalline materials on two-dimensional inert materials

KUB FRANCIS J

III-nitride P-channel field effect transistor with hole carriers in the channel

Semiconductor structure or device integrated with diamond

Light-emitting devices with integrated diamond

Graphene base transistor with reduced collector area

Inverted III-nitride P-channel field effect transistor with hole carriers in the channel

Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material

Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material

Graphene on semiconductor detector

Inverted P-channel III-nitride field effect tansistor with Hole Carriers in the channel

Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material

US NAVY

Defects annealing and impurities activation in semiconductors at thermodynamically non-stable conditions

Damage-free plasma-enhanced CVD passivation of AlGaN/GaN high electron mobility transistors

Method of making a graphene base transistor with reduced collector area

Transistor with diamond gate

Growth of high-performance III-nitride transistor passivation layer for GaN electronics

Diamond air bridge for thermal management of high power devices

Method of making a graphene base transistor with reduced collector area

Diamond on III-nitride device

Metal nitride alloy contact for semiconductor

Transition metal-bearing capping film for group III-nitride devices

HOBART KARL D

Nanocrystalline diamond three-dimensional films in patterned semiconductor substrates

Nanocrystalline diamond three-dimensional films in patterned semiconductor substrates

KOEHLER ANDREW D

Transistor with diamond gate

THE GOVERNMENT OF THE US SECRETARY OF THE NAVY

Methods of forming semiconductor devices including self-aligned p-type and n-type doped regions

NORTHROP GRUMMAN SYSTEMS CORP

Selective deposition of diamond in thermal vias

NEPAL NEERAJ

Growth of crystalline materials on two-dimensional inert materials

PARKER HANNIFIN CORP

Electric motor