Inventor
TSUNOMURA TAKAAKI
JP27 patents
⚠️ This page may combine multiple inventors who share the name “TSUNOMURA TAKAAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS ELECTRONICS CORP
21 patentsUS9196705B2Nov 24, 2015
Method of manufacturing a misfet on an SOI substrate
RENESAS ELECTRONICS CORP10 citations92
US8941178B2Jan 27, 2015
MOS field-effect transistor formed on the SOI substrate
RENESAS ELECTRONICS CORP9 citations92
US9935125B2Apr 3, 2018
Semiconductor device and manufacturing method of the same
RENESAS ELECTRONICS CORP6 citations84
US9484433B2Nov 1, 2016
Method of manufacturing a MISFET on an SOI substrate
RENESAS ELECTRONICS CORP5 citations84
US9263346B2Feb 16, 2016
Semiconductor device with silicon layer containing carbon
RENESAS ELECTRONICS CORP7 citations84
US10461158B2Oct 29, 2019
Semiconductor device and manufacturing method of the same
RENESAS ELECTRONICS CORP1 citations73
US9722044B2Aug 1, 2017
Manufacturing method of semiconductor device with silicon layer containing carbon
RENESAS ELECTRONICS CORP2 citations73
US9130039B2Sep 8, 2015
Semiconductor device and manufacturing method of the same
RENESAS ELECTRONICS CORP5 citations73
US12261205B2Mar 25, 2025
Semiconductor device
RENESAS ELECTRONICS CORP0 citations62
US12080716B2Sep 3, 2024
Method of manufacturing semiconductor device
RENESAS ELECTRONICS CORP0 citations62
US11996448B2May 28, 2024
Manufacturing method of semiconductor device including field-effect transistor comprising buried oxide (BOX) film and silicon layer
RENESAS ELECTRONICS CORP0 citations62
US11695012B2Jul 4, 2023
Semiconductor device and manufacturing method of the same
RENESAS ELECTRONICS CORP0 citations62
US11658211B2May 23, 2023
Semiconductor device and manufacturing method of the same
RENESAS ELECTRONICS CORP0 citations62
US10756115B2Aug 25, 2020
Semiconductor device and manufacturing method of the same
RENESAS ELECTRONICS CORP0 citations52
US10510775B2Dec 17, 2019
Semiconductor device and manufacturing method of the same
RENESAS ELECTRONICS CORP0 citations52
US10411112B2Sep 10, 2019
Semiconductor device with silicon layer containing carbon
RENESAS ELECTRONICS CORP0 citations52
US10263078B2Apr 16, 2019
Method of manufacturing a MISFET on an SOI substrate
RENESAS ELECTRONICS CORP0 citations52
US9978839B2May 22, 2018
Method of manufacturing a MOSFET on an SOI substrate
RENESAS ELECTRONICS CORP0 citations52
US9773872B2Sep 26, 2017
Method of manufacturing a semiconductor device to prevent occurrence of short-channel characteristics and parasitic capacitance
RENESAS ELECTRONICS CORP0 citations52
US9484456B2Nov 1, 2016
Semiconductor device and manufacturing method of the same
RENESAS ELECTRONICS CORP0 citations52
US9460936B2Oct 4, 2016
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP0 citations52
TOKYO ELECTRON LTD
3 patentsUS10410858B2Sep 10, 2019
Selective film deposition using halogen deactivation
TOKYO ELECTRON LTD2 citations73
US10991881B2Apr 27, 2021
Method for controlling the forming voltage in resistive random access memory devices
TOKYO ELECTRON LTD2 citations71
US11700778B2Jul 11, 2023
Method for controlling the forming voltage in resistive random access memory devices
TOKYO ELECTRON LTD0 citations61