Inventor
SEET CHIM SENG
SG28 patents
⚠️ This page may combine multiple inventors who share the name “SEET CHIM SENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES SG PTE LTD
20 patentsUS10008387B1Jun 26, 2018
Embedded memory in back-end-of-line low-k dielectric
GLOBALFOUNDRIES SG PTE LTD8 citations83
US9997562B1Jun 12, 2018
Mram memory device and manufacturing method thereof
GLOBALFOUNDRIES SG PTE LTD9 citations83
US10483121B2Nov 19, 2019
Embedded memory in back-end-of-line low-k dielectric
GLOBALFOUNDRIES SG PTE LTD2 citations72
US10128309B2Nov 13, 2018
Storage layer for magnetic memory with high thermal stability
GLOBALFOUNDRIES SG PTE LTD4 citations72
US8354347B2Jan 15, 2013
Method of forming high-k dielectric stop layer for contact hole opening
GLOBALFOUNDRIES SG PTE LTD6 citations72
US10468171B1Nov 5, 2019
Integrated circuits with magnetic tunnel junctions and methods of producing the same
GLOBALFOUNDRIES SG PTE LTD2 citations70
US12224089B2Feb 11, 2025
Thin film resistor
GLOBALFOUNDRIES SG PTE LTD0 citations62
US10840297B2Nov 17, 2020
Storage layer for magnetic memory with high thermal stability
GLOBALFOUNDRIES SG PTE LTD1 citations62
US11164858B2Nov 2, 2021
Integrated circuits and methods of forming integrated circuits
GLOBALFOUNDRIES SG PTE LTD0 citations61
US10297745B2May 21, 2019
Composite spacer layer for magnetoresistive memory
GLOBALFOUNDRIES SG PTE LTD0 citations51
US9972774B2May 15, 2018
Magnetic memory with high thermal budget
GLOBALFOUNDRIES SG PTE LTD1 citations51
US9842989B2Dec 12, 2017
Magnetic memory with high thermal budget
GLOBALFOUNDRIES SG PTE LTD0 citations51
US9548371B2Jan 17, 2017
Integrated circuits having nickel silicide contacts and methods for fabricating the same
GLOBALFOUNDRIES SG PTE LTD0 citations51
US11751483B2Sep 5, 2023
Spin diode devices
GLOBALFOUNDRIES SG PTE LTD0 citations45
US10475495B2Nov 12, 2019
Integrated circuits with magnetic tunnel junctions and methods of producing the same
GLOBALFOUNDRIES SG PTE LTD0 citations45
US12284925B2Apr 22, 2025
Memory device having a switching element thicker at a first side than at a second side and method of forming the same
GLOBALFOUNDRIES SG PTE LTD0 citations44
US9859236B2Jan 2, 2018
Integrated circuits having copper bonding structures with silicon carbon nitride passivation layers thereon and methods for fabricating same
GLOBALFOUNDRIES SG PTE LTD1 citations44
US10707358B2Jul 7, 2020
Selective shielding of ambient light at chip level
GLOBALFOUNDRIES SG PTE LTD0 citations42
US9293388B2Mar 22, 2016
Reliable passivation layers for semiconductor devices
GLOBALFOUNDRIES SG PTE LTD1 citations41
US9023725B2May 5, 2015
Filament free silicide formation
GLOBALFOUNDRIES SG PTE LTD0 citations38
CHARTERED SEMICONDUCTOR MFG
4 patentsUS7790617B2Sep 7, 2010
Formation of metal silicide layer over copper interconnect for reliability enhancement
CHARTERED SEMICONDUCTOR MFG11 citations84
US7253097B2Aug 7, 2007
Integrated circuit system using dual damascene process
CHARTERED SEMICONDUCTOR MFG11 citations84
US7803704B2Sep 28, 2010
Reliable interconnects
CHARTERED SEMICONDUCTOR MFG6 citations72
US7294241B2Nov 13, 2007
Method to form alpha phase Ta and its application to IC manufacturing
CHARTERED SEMICONDUCTOR MFG3 citations57