P

Inventor

SEET CHIM SENG

SG28 patents
⚠️ This page may combine multiple inventors who share the name “SEET CHIM SENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLOBALFOUNDRIES SG PTE LTD

20 patents
US10008387B1Jun 26, 2018

Embedded memory in back-end-of-line low-k dielectric

GLOBALFOUNDRIES SG PTE LTD8 citations83
US9997562B1Jun 12, 2018

Mram memory device and manufacturing method thereof

GLOBALFOUNDRIES SG PTE LTD9 citations83
US10483121B2Nov 19, 2019

Embedded memory in back-end-of-line low-k dielectric

GLOBALFOUNDRIES SG PTE LTD2 citations72
US10128309B2Nov 13, 2018

Storage layer for magnetic memory with high thermal stability

GLOBALFOUNDRIES SG PTE LTD4 citations72
US8354347B2Jan 15, 2013

Method of forming high-k dielectric stop layer for contact hole opening

GLOBALFOUNDRIES SG PTE LTD6 citations72
US10468171B1Nov 5, 2019

Integrated circuits with magnetic tunnel junctions and methods of producing the same

GLOBALFOUNDRIES SG PTE LTD2 citations70
US12224089B2Feb 11, 2025

Thin film resistor

GLOBALFOUNDRIES SG PTE LTD0 citations62
US10840297B2Nov 17, 2020

Storage layer for magnetic memory with high thermal stability

GLOBALFOUNDRIES SG PTE LTD1 citations62
US11164858B2Nov 2, 2021

Integrated circuits and methods of forming integrated circuits

GLOBALFOUNDRIES SG PTE LTD0 citations61
US10297745B2May 21, 2019

Composite spacer layer for magnetoresistive memory

GLOBALFOUNDRIES SG PTE LTD0 citations51
US9972774B2May 15, 2018

Magnetic memory with high thermal budget

GLOBALFOUNDRIES SG PTE LTD1 citations51
US9842989B2Dec 12, 2017

Magnetic memory with high thermal budget

GLOBALFOUNDRIES SG PTE LTD0 citations51
US9548371B2Jan 17, 2017

Integrated circuits having nickel silicide contacts and methods for fabricating the same

GLOBALFOUNDRIES SG PTE LTD0 citations51
US11751483B2Sep 5, 2023

Spin diode devices

GLOBALFOUNDRIES SG PTE LTD0 citations45
US10475495B2Nov 12, 2019

Integrated circuits with magnetic tunnel junctions and methods of producing the same

GLOBALFOUNDRIES SG PTE LTD0 citations45
US12284925B2Apr 22, 2025

Memory device having a switching element thicker at a first side than at a second side and method of forming the same

GLOBALFOUNDRIES SG PTE LTD0 citations44
US9859236B2Jan 2, 2018

Integrated circuits having copper bonding structures with silicon carbon nitride passivation layers thereon and methods for fabricating same

GLOBALFOUNDRIES SG PTE LTD1 citations44
US10707358B2Jul 7, 2020

Selective shielding of ambient light at chip level

GLOBALFOUNDRIES SG PTE LTD0 citations42
US9293388B2Mar 22, 2016

Reliable passivation layers for semiconductor devices

GLOBALFOUNDRIES SG PTE LTD1 citations41
US9023725B2May 5, 2015

Filament free silicide formation

GLOBALFOUNDRIES SG PTE LTD0 citations38

CHARTERED SEMICONDUCTOR MFG

4 patents

RAO XUESONG

2 patents

CHARTERED SEMICONDUCTOR MFG CO

1 patent

ZHANG BEI CHAO

1 patent