Inventor
DAI MIN
US43 patents
⚠️ This page may combine multiple inventors who share the name “DAI MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
8 patentsUS8952460B2Feb 10, 2015
Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices
IBM7 citations84
US9373501B2Jun 21, 2016
Hydroxyl group termination for nucleation of a dielectric metallic oxide
IBM3 citations73
US9059315B2Jun 16, 2015
Concurrently forming nFET and pFET gate dielectric layers
IBM2 citations63
US9831084B2Nov 28, 2017
Hydroxyl group termination for nucleation of a dielectric metallic oxide
IBM0 citations52
US9673108B1Jun 6, 2017
Fabrication of higher-K dielectrics
IBM1 citations52
US9478425B1Oct 25, 2016
Fabrication of higher-k dielectrics
IBM0 citations52
US8835292B2Sep 16, 2014
Method of manufacturing semiconductor devices including replacement metal gate process incorporating a conductive dummy gate layer
IBM1 citations52
US9080948B2Jul 14, 2015
Dynamic peak tracking in X-ray photoelectron spectroscopy measurement tool
IBM1 citations50
QUALCOMM INC
6 patentsUS10482843B2Nov 19, 2019
Selective reduction of blue light in a display frame
QUALCOMM INC6 citations71
US10979705B2Apr 13, 2021
Method for video coding with spatial prediction mode for multi-mode video coding
QUALCOMM INC0 citations62
US10631005B2Apr 21, 2020
System and method for coding in block prediction mode for display stream compression (DSC)
QUALCOMM INC1 citations62
US10186232B2Jan 22, 2019
Nonlinear signal scaling for display device power saving
QUALCOMM INC1 citations59
US9639920B2May 2, 2017
Dither directed LUT output value interpolation
QUALCOMM INC1 citations50
US9843816B2Dec 12, 2017
System and method for coding in pattern mode for display stream compression (DSC)
QUALCOMM INC0 citations42
GLOBALFOUNDRIES INC
3 patentsUS9484427B2Nov 1, 2016
Field effect transistors having multiple effective work functions
GLOBALFOUNDRIES INC7 citations84
US9691662B2Jun 27, 2017
Field effect transistors having multiple effective work functions
GLOBALFOUNDRIES INC0 citations52
US9257519B2Feb 9, 2016
Semiconductor device including graded gate stack, related method and design structure
GLOBALFOUNDRIES INC1 citations51
DANE GOKCE
3 patentsUS8953685B2Feb 10, 2015
Resource-adaptive video interpolation or extrapolation with motion level analysis
DANE GOKCE6 citations84
US8660175B2Feb 25, 2014
Selective display of interpolated or extrapolated video units
DANE GOKCE11 citations84
US9426414B2Aug 23, 2016
Reference selection for video interpolation or extrapolation
DANE GOKCE4 citations73
CHUDZIK MICHAEL P
3 patentsUS8735244B2May 27, 2014
Semiconductor device devoid of an interfacial layer and methods of manufacture
CHUDZIK MICHAEL P3 citations63
US8492290B2Jul 23, 2013
Fabrication of silicon oxide and oxynitride having sub-nanometer thickness
CHUDZIK MICHAEL P3 citations63
US9099461B2Aug 4, 2015
Method of manufacturing scaled equivalent oxide thickness gate stacks in semiconductor devices and related design structure
CHUDZIK MICHAEL P1 citations52
BRODSKY MARYJANE
2 patentsUS9029959B2May 12, 2015
Composite high-k gate dielectric stack for reducing gate leakage
BRODSKY MARYJANE3 citations61
US8809152B2Aug 19, 2014
Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices
BRODSKY MARYJANE2 citations61