Inventor
CHANG WEI-CHE
TW31 patents
⚠️ This page may combine multiple inventors who share the name “CHANG WEI-CHE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
WINBOND ELECTRONICS CORP
23 patentsUS9972626B1May 15, 2018
Dynamic random access memory and method of fabricating the same
WINBOND ELECTRONICS CORP23 citations93
US10083906B1Sep 25, 2018
Memory device with buried word line for reduced gate-induced drain leakage current and method for manufacturing the same
WINBOND ELECTRONICS CORP11 citations83
US9613967B1Apr 4, 2017
Memory device and method of fabricating the same
WINBOND ELECTRONICS CORP9 citations82
US11183499B2Nov 23, 2021
Dynamic random access memory and methods of manufacturing, writing and reading the same
WINBOND ELECTRONICS CORP2 citations72
US10797057B2Oct 6, 2020
DRAM semiconductor device having reduced parasitic capacitance between capacitor contacts and bit line structures and method for manufacturing the same
WINBOND ELECTRONICS CORP2 citations72
US10074654B1Sep 11, 2018
Dynamic random access memory
WINBOND ELECTRONICS CORP3 citations72
US10910380B2Feb 2, 2021
Method of manufacturing dynamic random access memory
WINBOND ELECTRONICS CORP2 citations71
US10424586B2Sep 24, 2019
Memory device including a trench isolation structure between buried word lines and manufacturing method thereof
WINBOND ELECTRONICS CORP2 citations71
US12300612B2May 13, 2025
Semiconductor structure including conductive layers contacting trench
WINBOND ELECTRONICS CORP0 citations62
US12193221B2Jan 7, 2025
Semiconductor structure and method for forming the same
WINBOND ELECTRONICS CORP0 citations62
US11765888B2Sep 19, 2023
Methods of manufacturing dynamic random access memory
WINBOND ELECTRONICS CORP0 citations62
US11404422B2Aug 2, 2022
DRAM semiconductor device having reduced parasitic capacitance between capacitor contacts and bit line structures and method for manufacturing the same
WINBOND ELECTRONICS CORP0 citations62
US10332572B2Jun 25, 2019
Memory device and manufacturing method thereof
WINBOND ELECTRONICS CORP1 citations62
US12089394B2Sep 10, 2024
Semiconductor structure
WINBOND ELECTRONICS CORP0 citations61
US12029049B2Jul 2, 2024
Memory structures and methods for forming the same
WINBOND ELECTRONICS CORP0 citations61
US11495605B2Nov 8, 2022
Semiconductor structure and manufacturing method thereof
WINBOND ELECTRONICS CORP0 citations61
US11545493B2Jan 3, 2023
Memory devices and methods of fabricating the same
WINBOND ELECTRONICS CORP0 citations59
US10910384B2Feb 2, 2021
Memory devices and methods of fabricating the same
WINBOND ELECTRONICS CORP0 citations59
US11690214B2Jun 27, 2023
Dynamic random access memory and method for manufacturing the same
WINBOND ELECTRONICS CORP0 citations58
US12588201B2Mar 24, 2026
Memory device with increased density and method of fabricating the same
WINBOND ELECTRONICS CORP0 citations52
US11335770B2May 17, 2022
Semiconductor isolation structures having different configurations in different device regions and method of forming the same
WINBOND ELECTRONICS CORP0 citations52
US10366995B2Jul 30, 2019
Semiconductor structure and manufacturing method thereof
WINBOND ELECTRONICS CORP0 citations52
US12394675B2Aug 19, 2025
Method and system for monitoring and controlling semiconductor process
WINBOND ELECTRONICS CORP0 citations49