Inventor
HSIA LIANG-CHOO
TW116 patents
⚠️ This page may combine multiple inventors who share the name “HSIA LIANG-CHOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CHARTERED SEMICONDUCTOR MFG
23 patentsUS6706625B1Mar 16, 2004
Copper recess formation using chemical process for fabricating barrier cap for lines and vias
CHARTERED SEMICONDUCTOR MFG171 citations96
US7271110B2Sep 18, 2007
High density plasma and bias RF power process to make stable FSG with less free F and SiN with less H to enhance the FSG/SiN integration reliability
CHARTERED SEMICONDUCTOR MFG32 citations93
US7479425B2Jan 20, 2009
Method for forming high-K charge storage device
CHARTERED SEMICONDUCTOR MFG40 citations92
US7445978B2Nov 4, 2008
Method to remove spacer after salicidation to enhance contact etch stop liner stress on MOS
CHARTERED SEMICONDUCTOR MFG22 citations92
US7202140B1Apr 10, 2007
Method to fabricate Ge and Si devices together for performance enhancement
CHARTERED SEMICONDUCTOR MFG21 citations92
US7094669B2Aug 22, 2006
Structure and method of liner air gap formation
CHARTERED SEMICONDUCTOR MFG46 citations92
US6787452B2Sep 7, 2004
Use of amorphous carbon as a removable ARC material for dual damascene fabrication
CHARTERED SEMICONDUCTOR MFG51 citations92
US6762085B2Jul 13, 2004
Method of forming a high performance and low cost CMOS device
CHARTERED SEMICONDUCTOR MFG36 citations92
US7524755B2Apr 28, 2009
Entire encapsulation of Cu interconnects using self-aligned CuSiN film
CHARTERED SEMICONDUCTOR MFG37 citations91
US7224060B2May 29, 2007
Integrated circuit with protective moat
CHARTERED SEMICONDUCTOR MFG25 citations89
US7084025B2Aug 1, 2006
Selective oxide trimming to improve metal T-gate transistor
CHARTERED SEMICONDUCTOR MFG39 citations89
US7790617B2Sep 7, 2010
Formation of metal silicide layer over copper interconnect for reliability enhancement
CHARTERED SEMICONDUCTOR MFG11 citations84
US7710182B2May 4, 2010
Reliable level shifter of ultra-high voltage device used in low power application
CHARTERED SEMICONDUCTOR MFG12 citations84
US7256112B2Aug 14, 2007
Laser activation of implanted contact plug for memory bitline fabrication
CHARTERED SEMICONDUCTOR MFG15 citations84
US7253097B2Aug 7, 2007
Integrated circuit system using dual damascene process
CHARTERED SEMICONDUCTOR MFG11 citations84
US7247555B2Jul 24, 2007
Method to control dual damascene trench etch profile and trench depth uniformity
CHARTERED SEMICONDUCTOR MFG13 citations84
US6995078B2Feb 7, 2006
Method of forming a relaxed semiconductor buffer layer on a substrate with a large lattice mismatch
CHARTERED SEMICONDUCTOR MFG12 citations84
US7560199B2Jul 14, 2009
Polarizing photolithography system
CHARTERED SEMICONDUCTOR MFG9 citations83
US7256084B2Aug 14, 2007
Composite stress spacer
CHARTERED SEMICONDUCTOR MFG12 citations83
US7585768B2Sep 8, 2009
Combined copper plating method to improve gap fill
CHARTERED SEMICONDUCTOR MFG14 citations82
US7601607B2Oct 13, 2009
Protruded contact and insertion of inter-layer-dielectric material to match damascene hardmask to improve undercut for low-k interconnects
CHARTERED SEMICONDUCTOR MFG8 citations80
US7338886B2Mar 4, 2008
Implantation-less approach to fabricating strained semiconductor on isolation wafers
CHARTERED SEMICONDUCTOR MFG6 citations74
US6586314B1Jul 1, 2003
Method of forming shallow trench isolation regions with improved corner rounding
CHARTERED SEMICONDUCTOR MFG7 citations74
MOSEL VITELIC INC
10 patentsUS6008515ADec 28, 1999
Stacked capacitor having improved charge storage capacity
MOSEL VITELIC INC48 citations96
US5672243ASep 30, 1997
Antireflection coating for highly reflective photolithographic layers comprising chromium oxide or chromium suboxide
MOSEL VITELIC INC56 citations96
US6043547AMar 28, 2000
Circuit structure with an anti-reflective layer
MOSEL VITELIC INC23 citations93
US5851898ADec 22, 1998
Method of forming stacked capacitor having corrugated side-wall structure
MOSEL VITELIC INC28 citations93
US5843822ADec 1, 1998
Double-side corrugated cylindrical capacitor structure of high density DRAMs
MOSEL VITELIC INC54 citations93
US5789267AAug 4, 1998
Method of making corrugated cell contact
MOSEL VITELIC INC23 citations93
US6057576AMay 2, 2000
Inverse-T tungsten gate apparatus
MOSEL VITELIC INC22 citations92
US5858867AJan 12, 1999
Method of making an inverse-T tungsten gate
MOSEL VITELIC INC30 citations92
US6162724ADec 19, 2000
Method for forming metalization for inter-layer connections
MOSEL VITELIC INC15 citations74
US5909621AJun 1, 1999
Single-side corrugated cylindrical capacitor structure of high density DRAMs
MOSEL VITELIC INC14 citations74
IBM
5 patentsUS5633522AMay 27, 1997
CMOS transistor with two-layer inverse-T tungsten gate
IBM60 citations95
US4932883AJun 12, 1990
Elastomeric connectors for electronic packaging and testing
IBM109 citations93
US5599725AFeb 4, 1997
Method for fabricating a MOS transistor with two-layer inverse-T tungsten gate structure
IBM40 citations92
US5135595AAug 4, 1992
Process for fabricating a low dielectric composite substrate
IBM24 citations91
US5277725AJan 11, 1994
Process for fabricating a low dielectric composite substrate
IBM17 citations81
GLOBALFOUNDRIES SG PTE LTD
3 patentsUS7960282B2Jun 14, 2011
Method of manufacture an integrated circuit system with through silicon via
GLOBALFOUNDRIES SG PTE LTD29 citations89
US8012839B2Sep 6, 2011
Method for fabricating a semiconductor device having an epitaxial channel and transistor having same
GLOBALFOUNDRIES SG PTE LTD8 citations84
US7989338B2Aug 2, 2011
Grain boundary blocking for stress migration and electromigration improvement in CU interconnects
GLOBALFOUNDRIES SG PTE LTD8 citations82
MOSEL VILTELIC INC
1 patentUNITED INTEGRATED CIRCUITS CORP
1 patent(unassigned)
1 patentLIM BARBARA FONG CHIN
1 patentSEAH BOON MENG
1 patentLIU JINPING
1 patentLIM VICTOR SENG KEONG
1 patentYELEHANKA PRADEEP RAMACHANDRAMURTHY
1 patentLEE YONG MENG
1 patentShowing the top 50 of 116 patents by PatentIndex Score.