Inventor

HAUTALA JOHN

US52 patents

⚠️ This page may combine multiple inventors who share the name “HAUTALA JOHN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HAUTALA JOHN

VARIAN SEMICONDUCTOR EQUIPMENT ASS INC

Techniques to engineer nanoscale patterned features using ions

Techniques to engineer nanoscale patterned features using ions

Techniques for improved spacer in nanosheet device

Techniques to engineer nanoscale patterned features using ions

Techniques for manipulating patterned features using ions

Ion-assisted deposition and implantation of photoresist to improve line edge roughness

Techniques to engineer nanoscale patterned features using ions

Method and device for power rail in a fin type field effect transistor

Techniques and structure for forming thin silicon-on-insulator materials

Composite patterning mask using angled ion beam deposition

Apparatus and techniques for filling a cavity using angled ion beam

Techniques for processing substrates using directional reactive ion etching

Extreme edge uniformity control

Techniques for manipulating patterned features using ions

Techniques for processing substrates using directional reactive ion etching

Multiple patterning approach using ion implantation

Techniques for processing a polycrystalline layer using an angled ion beam

Extreme edge uniformity control

Optical component having variable depth gratings and method of formation

Performance improvement of EUV photoresist by ion implantation

Techniques for forming patterned features using directional ions

Non-uniform gate oxide thickness for DRAM device

Device structure for forming semiconductor device having angled contacts

Optical component having variable depth gratings and method of formation

Device structure for forming semiconductor device having angled contacts

High efficiency apparatus and method for depositing a layer on a three dimensional structure

Performance improvement of EUV photoresist by ion implantation

Sputter etch material selectivity

Ion-assisted deposition and implantation of photoresist to improve line edge roughness

Multiple exposure treatment for processing a patterning feature

Ion implantation for improved contact hole critical dimension uniformity

Filling a cavity in a substrate using sputtering and deposition

APPLIED MATERIALS INC

Techniques and apparatus for selective shaping of mask features using angled beams

Techniques and apparatus for selective shaping of mask features using angled beams

Semiconductor device cavity formation using directional deposition

Techniques for void-free material depositions

Techniques and apparatus for selective shaping of mask features using angled beams

Devices and methods for DRAM leakage reduction

Ribbon beam plasma enhanced chemical vapor deposition system for anisotropic deposition of thin films

High aspect ratio taper improvement using directional deposition

Ion implantation to form step-oxide trench MOSFET

Directional etch for improved dual deck three-dimensional NAND architecture margin

Concurrent or cyclical etch and directional deposition

Techniques for void-free material depositions

Methods of modifying openings in hardmasks and photoresists to achieve desired critical dimensions

Method for depositing layers directly adjacent uncovered vias or contact holes

Wordline contact formation in NAND devices

Multi process air gap formation

VARIAN SEMICONDUCTOR EQUIPMENT

Techniques for forming angled structures for reduced defects in heteroepitaxy of semiconductor films

LU XIANFENG

Deposition of porous films for thermoelectric applications