P

Inventor

LEE JAE GIL

KR51 patents
⚠️ This page may combine multiple inventors who share the name “LEE JAE GIL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SK HYNIX INC

24 patents
US10854707B2Dec 1, 2020

Semiconductor device including dielectric structure having ferroelectric layer and non-ferroelectric layer

SK HYNIX INC10 citations84
US11488979B2Nov 1, 2022

Semiconductor device of three-dimensional structure including ferroelectric layer

SK HYNIX INC2 citations73
US11430812B2Aug 30, 2022

Nonvolatile memory device including ferroelectric layer having negative capacitance

SK HYNIX INC2 citations73
US11244960B2Feb 8, 2022

Semiconductor memory device and method of operating the semiconductor memory device

SK HYNIX INC4 citations73
US11244959B2Feb 8, 2022

Semiconductor device having ferroelectric material and method of fabricating the same

SK HYNIX INC2 citations73
US12261219B2Mar 25, 2025

Semiconductor device including ferroelectric layer and insulation layer with metal particles and methods of manufacturing the same

SK HYNIX INC1 citations63
US12382846B2Aug 5, 2025

Ferroelectric components and cross point array devices including the ferroelectric components

SK HYNIX INC0 citations62
US12108606B2Oct 1, 2024

Nonvolatile memory device having a ferroelectric layer

SK HYNIX INC0 citations62
US11825660B2Nov 21, 2023

Semiconductor device having ferroelectric material and method of fabricating the same

SK HYNIX INC0 citations62
US11812618B2Nov 7, 2023

Nonvolatile memory device including ferroelectric layer having negative capacitance

SK HYNIX INC0 citations62
US11800719B2Oct 24, 2023

Nonvolatile memory device having a ferroelectric layer

SK HYNIX INC0 citations62
US11659715B2May 23, 2023

Semiconductor memory device and method of operating the semiconductor memory device

SK HYNIX INC0 citations62
US11502248B2Nov 15, 2022

Ferroelectric components and cross point array devices including the ferroelectric components

SK HYNIX INC0 citations62
US11456318B2Sep 27, 2022

Nonvolatile memory device having a ferroelectric layer

SK HYNIX INC0 citations62
US11393846B2Jul 19, 2022

Ferroelectric memory device having ferroelectric induction layer and method of manufacturing the same

SK HYNIX INC1 citations62
US11362107B2Jun 14, 2022

Nonvolatile memory device having a ferroelectric layer

SK HYNIX INC1 citations62
US12058871B2Aug 6, 2024

Semiconductor device including ferroelectric layer and metal particles embedded in metal-organic framework layer

SK HYNIX INC0 citations61
US11871569B2Jan 9, 2024

Nonvolatile memory device having multiple numbers of channel layers

SK HYNIX INC0 citations61
US11818895B2Nov 14, 2023

Semiconductor device including ferroelectric layer and metal particles embedded in metal-organic framework layer

SK HYNIX INC1 citations61
US11424269B2Aug 23, 2022

Method of fabricating vertical memory device

SK HYNIX INC1 citations61
US11164885B2Nov 2, 2021

Nonvolatile memory device having multiple numbers of channel layers

SK HYNIX INC0 citations61
US10937808B2Mar 2, 2021

Vertical memory device and method of fabricating the same

SK HYNIX INC1 citations61
US11792995B2Oct 17, 2023

Semiconductor device including ferroelectric layer and method of manufacturing the same

SK HYNIX INC1 citations60
US11974426B2Apr 30, 2024

Semiconductor device having transistor device of three-dimensional structure

SK HYNIX INC0 citations49

KAKAO CORP

5 patents

FAIRCHILD KR SEMICONDUCTOR LTD

4 patents

SEMICONDUCTOR COMPONENTS IND LLC

4 patents

SAMSUNG ELECTRONICS CO LTD

3 patents

SAMSUNG DISPLAY CO LTD

2 patents

LEE JAE-GIL

2 patents

KOREA ADVANCED INST SCI & TECH

1 patent

FAIRCHILD KOREA SEMICONDUCTOR LTD

1 patent

BARBER RONALD J

1 patent

IBM

1 patent

KIM JIN-MYUNG

1 patent

SEOUL SEMICONDUCTOR CO LTD

1 patent

Showing the top 50 of 51 patents by PatentIndex Score.