Inventor · disambiguated record
Cheng T. Horng
Also filed as: HORNG CHENG · HORNG CHENG T · HORNG CHENG TZONG
164 granted patents·2 pending applications·4,393 citations·filing 1977–2015
99Inventor score
Files withHEADWAY TECHNOLOGIES INC96IBM19MAGIC TECHNOLOGIES INC17HORNG CHENG T13APPLIED SPINTRONICS INC7
Top patents by PatentIndex Score
166 records- 0199US9006704B2Magnetic element with improved out-of-plane anisotropy for spintronic applicationsJAN GUENOLE·Filed 2011·Granted Apr 14, 2015·61 cites·21 claims
- 0299US8823118B2Spin torque transfer magnetic tunnel junction fabricated with a composite tunneling barrier layerHORNG CHENG T·Filed 2012·Granted Sep 2, 2014·86 cites·12 claims
- 0399US8749003B2High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the sameMAGIC TECHNOLOGIES INC·Filed 2013·Granted Jun 10, 2014·51 cites·7 claims
- 0499US8470462B2Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctionsHORNG CHENG T·Filed 2010·Granted Jun 25, 2013·71 cites·12 claims
- 0599US6773515B2FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structuresHEADWAY TECHNOLOGIES INC·Filed 2002·Granted Aug 10, 2004·120 cites·11 claims
- 0698US8138561B2Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAMHORNG CHENG T·Filed 2008·Granted Mar 20, 2012·58 cites·10 claims
- 0798US8080432B2High performance MTJ element for STT-RAM and method for making the sameHORNG CHENG T·Filed 2010·Granted Dec 20, 2011·48 cites·14 claims
- 0898US7750421B2High performance MTJ element for STT-RAM and method for making the sameMAGIC TECHNOLOGIES INC·Filed 2007·Granted Jul 6, 2010·100 cites·7 claims
- 0998US7595520B2Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the sameMAGIC TECHNOLOGIES INC·Filed 2006·Granted Sep 29, 2009·70 cites·14 claims
- 1098US7479394B2MgO/NiFe MTJ for high performance MRAM applicationMAGIC TECHNOLOGIES INC·Filed 2005·Granted Jan 20, 2009·46 cites·23 claims
- 1197US8184411B2MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM applicationZHANG KUNLIANG·Filed 2009·Granted May 22, 2012·48 cites·29 claims
- 1297US7948044B2Low switching current MTJ element for ultra-high STT-RAM and a method for making the sameMAGIC TECHNOLOGIES INC·Filed 2008·Granted May 24, 2011·104 cites·16 claims
- 1397US7598579B2Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching currentMAGIC TECHNOLOGIES INC·Filed 2007·Granted Oct 6, 2009·44 cites·7 claims
- 1497US7449345B2Capping structure for enhancing dR/R of the MTJ deviceHEADWAY TECHNOLOGIES INC·Filed 2004·Granted Nov 11, 2008·144 cites·15 claims
- 1597US7262941B2FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structuresHEADWAY TECHNOLOGIES INC·Filed 2004·Granted Aug 28, 2007·108 cites·22 claims
- 1697US7105372B2Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropyHEADWAY TECHNOLOGIES INC·Filed 2004·Granted Sep 12, 2006·65 cites·14 claims
- 1797US6466418B1Bottom spin valves with continuous spacer exchange (or hard) biasHEADWAY TECHNOLOGIES INC·Filed 2000·Granted Oct 15, 2002·114 cites·37 claims
- 1897US5159508AMagnetic head slider having a protective coating thereonIBM·Filed 1990·Granted Oct 27, 1992·111 cites·5 claims
- 1996US8057925B2Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the sameHORNG CHENG T·Filed 2008·Granted Nov 15, 2011·30 cites·11 claims
- 2096US7480173B2Spin transfer MRAM device with novel magnetic free layerMAGIC TECHNOLOGIES INC·Filed 2007·Granted Jan 20, 2009·76 cites·27 claims
- 2196US7390529B2Free layer for CPP GMR having iron rich NiFeHEADWAY TECHNOLOGIES INC·Filed 2004·Granted Jun 24, 2008·67 cites·19 claims
- 2296US7331100B2Process of manufacturing a seed/AFM combination for a CPP GMR deviceHEADWAY TECHNOLOGIES INC·Filed 2004·Granted Feb 19, 2008·57 cites·17 claims
- 2396US4211582AProcess for making large area isolation trenches utilizing a two-step selective etching techniqueIBM·Filed 1979·Granted Jul 8, 1980·109 cites·7 claims
- 2495US8673654B2Underlayer for high performance magnetic tunneling junction MRAMHONG LIUBO·Filed 2009·Granted Mar 18, 2014·35 cites·6 claims
- 2595US8609262B2Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM applicationHORNG CHENG T·Filed 2009·Granted Dec 17, 2013·33 cites·16 claims
- 2695US7528457B2Method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/RMAGIC TECHNOLOGIES INC·Filed 2006·Granted May 5, 2009·38 cites·13 claims
- 2795US6292336B1Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficientHEADWAY TECHNOLOGIES INC·Filed 1999·Granted Sep 18, 2001·116 cites·20 claims
- 2894US9455400B2Magnetic tunnel junction for MRAM applicationsHEADWAY TECH INC·Filed 2015·Granted Sep 27, 2016·13 cites·6 claims
- 2994US7672093B2Hafnium doped cap and free layer for MRAM deviceMAGIC TECHNOLOGIES INC·Filed 2006·Granted Mar 2, 2010·27 cites·15 claims
- 3094US6517896B1Spin filter bottom spin valve head with continuous spacer exchange biasHEADWAY TECHNOLOGIES INC·Filed 2000·Granted Feb 11, 2003·33 cites·8 claims
- 3194US5175658AThin film magnetic head having a protective coating and method for making sameIBM·Filed 1990·Granted Dec 29, 1992·70 cites·7 claims
- 3293US8786036B2Magnetic tunnel junction for MRAM applicationsCAO WEI·Filed 2011·Granted Jul 22, 2014·14 cites·9 claims
- 3393US8456893B2Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching currentHORNG CHENG T·Filed 2009·Granted Jun 4, 2013·19 cites·18 claims
- 3493US8404367B2Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the sameHORNG CHENG T·Filed 2011·Granted Mar 26, 2013·10 cites·10 claims
- 3593US8378330B2Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the sameHEADWAY TECHNOLOGIES INC·Filed 2009·Granted Feb 19, 2013·12 cites·12 claims
- 3693US6882509B2GMR configuration with enhanced spin filteringHEADWAY TECHNOLOGIES INC·Filed 2004·Granted Apr 19, 2005·32 cites·12 claims
- 3793US6729014B2Magnetic assist read track-width definition for a lead overlay top spin-valve GMR headHEADWAY TECHNOLOGIES INC·Filed 2001·Granted May 4, 2004·33 cites·21 claims
- 3893US6522507B1Single top spin valve heads for ultra-high recording densityHEADWAY TECHNOLOGIES INC·Filed 2000·Granted Feb 18, 2003·46 cites·28 claims
- 3992US8436437B2High performance MTJ elements for STT-RAM and method for making the sameHORNG CHENG T·Filed 2010·Granted May 7, 2013·10 cites·11 claims
- 4092US8268641B2Spin transfer MRAM device with novel magnetic synthetic free layerGUO YIMIN·Filed 2011·Granted Sep 18, 2012·9 cites·12 claims
- 4192US7663131B2SyAF structure to fabricate Mbit MTJ MRAMMAGIC TECHNOLOGIES INC·Filed 2007·Granted Feb 16, 2010·23 cites·8 claims
- 4292US7211447B2Structure and method to fabricate high performance MTJ devices for MRAM applicationsAPPLIED SPINTRONICS INC·Filed 2005·Granted May 1, 2007·25 cites·20 claims
- 4392US7180712B1Shield structure design to improve the stability of an MR headHEADWAY TECHNOLOGIES INC·Filed 2000·Granted Feb 20, 2007·37 cites·8 claims
- 4492US6974708B2Oxidation structure/method to fabricate a high-performance magnetic tunneling junction MRAMAPPLIED SPINTRONICS INC·Filed 2004·Granted Dec 13, 2005·52 cites·13 claims
- 4592US6960480B1Method of forming a magnetic tunneling junction (MTJ) MRAM device and a tunneling magnetoresistive (TMR) read headAPPLIED SPINTRONICS INC·Filed 2004·Granted Nov 1, 2005·56 cites·19 claims
- 4692US6888703B2Multilayered structures comprising magnetic nano-oxide layers for current perpindicular to plane GMR headsHEADWAY TECHNOLOGIES INC·Filed 2001·Granted May 3, 2005·33 cites·10 claims
- 4791US8372661B2High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the sameMAGIC TECHNOLOGIES INC·Filed 2007·Granted Feb 12, 2013·18 cites·11 claims
- 4891US7256971B2Process and structure to fabricate CPP spin valve heads for ultra-high recording densityHEADWAY TECHNOLOGIES INC·Filed 2004·Granted Aug 14, 2007·47 cites·33 claims
- 4991US6770382B1GMR configuration with enhanced spin filteringHEADWAY TECHNOLOGIES INC·Filed 1999·Granted Aug 3, 2004·63 cites·12 claims
- 5091US6703654B1Bottom electrode for making a magnetic tunneling junction (MTJ)HEADWAY TECHNOLOGIES INC·Filed 2003·Granted Mar 9, 2004·72 cites·25 claims
Showing the top 50 of 166 patent records by PatentIndex Score.
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