Inventor

AHN DONG-HO

KR49 patents

⚠️ This page may combine multiple inventors who share the name “AHN DONG-HO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

AHN DONG-HO

SAMSUNG ELECTRONICS CO LTD

Method of forming a trench type isolation layer

Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layer

Trench isolation regions having recess-inhibiting layers therein that protect against overetching

Methods of forming trench isolation regions having recess-inhibiting layers therein that protect against overetching

Phase change memory devices including memory cells having different phase change materials and related methods and systems

Method of fabricating floating gates in semiconductor device

Combined field/trench isolation region fabrication methods

Phase-change memory device having phase change material pattern shared between adjacent cells and electronic product including the phase-change memory

Method of forming a semiconductor device

Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layer

Method of forming shallow trench isolation layer in semiconductor device

Isolation method for semiconductor device using selective epitaxial growth

Methods of forming phase change memory devices having bottom electrodes

Trench isolation method of semiconductor device

Phase change memory device and method of fabricating the same

Method of preventing semiconductor layers from bending and semiconductor device formed thereby

Variable resistance memory device and method of manufacturing the same

Method of preventing semiconductor layers from bending and semiconductor device formed thereby

Isolation method of semiconductor device using second pad oxide layer formed through chemical vapor deposition (CVD)

Memory device including a variable resistance material layer

Variable resistance memory devices

Variable resistance memory device and method of manufacturing the same

Method of manufacturing a phase change memory device

Memory device

Non-volatile memory device

Plasma treating methods of fabricating phase change memory devices, and memory devices so fabricated

Methods of forming field oxide isolation regions with reduced susceptibility to polysilicon residue defects

Memory device including phase-changeable material region and method of fabricating the same

Phase change memory device and method of forming the same

Method of forming semiconductor devices having threshold switching devices

Variable resistance memory device and method of manufacturing the same

Methods of forming contact structures and semiconductor devices fabricated using contact structures

Methods of forming semiconductor devices having threshold switching devices

Memory device

Device isolation method of semiconductor device

HYUNDAI MOBIS CO LTD

Anti-lock brake equipment solenoid valve

Anti-lock brake system solenoid valve

Solenoid controlled valve of anti-lock brake system

Anti-lock brake equipment solenoid valve

Anti-lock brake system pump housing

AHN DONG-HO

Non-volatile memory device including phase-change material

Non-volatile memory device including phase-change material

AN HYEONG-GEUN

Nonvolatile memory cells having phase changeable patterns therein for data storage

KIM DO-HYUNG

Variable resistance material layers and variable resistance memory devices including the same

HYUNDAI MOTOR CO LTD

Fuel cell stack

OH GYU-HWAN

Methods of forming multi-level cell of semiconductor memory

KOREA INST SCI & TECH

Phase change memory cell with transparent conducting oxide for electrode contact material

CHOI BYOUNG-DEOG

Methods of manufacturing non-volatile phase-change memory devices

MOGAM BIOTECHNOLOGY INST

MDCK-derived cell strain suspension-cultured in protein-free medium and method for proliferating virus using cell strain