Inventor
HUANG KUO-TAI
TW66 patents
⚠️ This page may combine multiple inventors who share the name “HUANG KUO-TAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
28 patentsUS6368923B1Apr 9, 2002
Method of fabricating a dual metal gate having two different gate dielectric layers
UNITED MICROELECTRONICS CORP118 citations98
US6078492AJun 20, 2000
Structure of a capacitor in a semiconductor device having a self align contact window which has a slanted sidewall
UNITED MICROELECTRONICS CORP62 citations96
US5956598ASep 21, 1999
Method for fabricating a shallow-trench isolation structure with a rounded corner in integrated circuit
UNITED MICROELECTRONICS CORP63 citations96
US6291288B1Sep 18, 2001
Method of fabricating a thin and structurally-undefective dielectric structure for a storage capacitor in dynamic random-access memory
UNITED MICROELECTRONICS CORP26 citations93
US6156600ADec 5, 2000
Method for fabricating capacitor in integrated circuit
UNITED MICROELECTRONICS CORP26 citations93
US6146941ANov 14, 2000
Method for fabricating a capacitor in a semiconductor device
UNITED MICROELECTRONICS CORP21 citations93
US6133086AOct 17, 2000
Fabrication method of a tantalum pentoxide dielectric layer for a DRAM capacitor
UNITED MICROELECTRONICS CORP24 citations93
US5994183ANov 30, 1999
Method for forming charge storage structure
UNITED MICROELECTRONICS CORP49 citations93
US5895254AApr 20, 1999
Method of manufacturing shallow trench isolation structure
UNITED MICROELECTRONICS CORP35 citations93
US7553763B2Jun 30, 2009
Salicide process utilizing a cluster ion implantation process
UNITED MICROELECTRONICS CORP22 citations92
US6251783B1Jun 26, 2001
Method of manufacturing shallow trench isolation
UNITED MICROELECTRONICS CORP20 citations92
US6235606B1May 22, 2001
Method of fabricating shallow trench isolation
UNITED MICROELECTRONICS CORP29 citations92
US6221712B1Apr 24, 2001
Method for fabricating gate oxide layer
UNITED MICROELECTRONICS CORP26 citations92
US6037206AMar 14, 2000
Method of fabricating a capacitor of a dynamic random access memory
UNITED MICROELECTRONICS CORP29 citations90
US5976951ANov 2, 1999
Method for preventing oxide recess formation in a shallow trench isolation
UNITED MICROELECTRONICS CORP40 citations89
US6555485B1Apr 29, 2003
Method for fabricating a gate dielectric layer
UNITED MICROELECTRONICS CORP33 citations85
US6479344B2Nov 12, 2002
Method of fabricating DRAM capacitor
UNITED MICROELECTRONICS CORP8 citations74
US6218238B1Apr 17, 2001
Method of fabricating DRAM capacitor
UNITED MICROELECTRONICS CORP9 citations74
US6207497B1Mar 27, 2001
Conformity of ultra-thin nitride deposition for DRAM capacitor
UNITED MICROELECTRONICS CORP11 citations74
US6087262AJul 11, 2000
Method for manufacturing shallow trench isolation structure
UNITED MICROELECTRONICS CORP11 citations74
US6083789AJul 4, 2000
Method for manufacturing DRAM capacitor
UNITED MICROELECTRONICS CORP9 citations74
US6057189AMay 2, 2000
Method of fabricating capacitor utilizing an ion implantation method
UNITED MICROELECTRONICS CORP9 citations74
US6555425B2Apr 29, 2003
Method for manufacturing transistor
UNITED MICROELECTRONICS CORP10 citations66
US6403411B1Jun 11, 2002
Method for manufacturing lower electrode of DRAM capacitor
UNITED MICROELECTRONICS CORP3 citations63
US6291295B1Sep 18, 2001
Method of forming a storage electrode of a capacitor on an ion-implanted isolation layer
UNITED MICROELECTRONICS CORP2 citations63
US6251769B1Jun 26, 2001
Method of manufacturing contact pad
UNITED MICROELECTRONICS CORP2 citations63
US6200844B1Mar 13, 2001
Method of manufacturing dielectric film of capacitor in dynamic random access memory
UNITED MICROELECTRONICS CORP6 citations63
US7435640B2Oct 14, 2008
Method of fabricating gate structure
UNITED MICROELECTRONICS CORP4 citations62
TAIWAN SEMICONDUCTOR MFG
7 patentsUS8383502B2Feb 26, 2013
Integrated high-K/metal gate in CMOS process flow
TAIWAN SEMICONDUCTOR MFG11 citations93
US7812414B2Oct 12, 2010
Hybrid process for forming metal gates
TAIWAN SEMICONDUCTOR MFG20 citations92
US7625791B2Dec 1, 2009
High-k dielectric metal gate device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG26 citations92
US8841731B2Sep 23, 2014
Integrated high-k/metal gate in CMOS process flow
TAIWAN SEMICONDUCTOR MFG5 citations84
US8003507B2Aug 23, 2011
Method of integrating high-K/metal gate in CMOS process flow
TAIWAN SEMICONDUCTOR MFG8 citations84
US9257426B2Feb 9, 2016
Integrated high-k/metal gate in CMOS process flow
TAIWAN SEMICONDUCTOR MFG2 citations63
US7989321B2Aug 2, 2011
Semiconductor device gate structure including a gettering layer
TAIWAN SEMICONDUCTOR MFG5 citations63
TAIWAN SEMICONDUCTOR MFG CO LTD
4 patentsUS9960160B2May 1, 2018
Method of forming a single metal that performs N work function and P work function in a high-k/metal gate process
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9601388B2Mar 21, 2017
Integrated high-K/metal gate in CMOS process flow
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US12015030B2Jun 18, 2024
Gate stacks for semiconductor devices of different conductivity types
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11289481B2Mar 29, 2022
Single metal that performs N work function and P work function in a high-K/metal gate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
HSU PENG-FU
3 patentsUS8853068B2Oct 7, 2014
Method of fabricating dual high-k metal gate for MOS devices
HSU PENG-FU9 citations83
US8105931B2Jan 31, 2012
Method of fabricating dual high-k metal gates for MOS devices
HSU PENG-FU10 citations83
US8536660B2Sep 17, 2013
Hybrid process for forming metal gates of MOS devices
HSU PENG-FU8 citations82
LIN YIH-ANN
2 patentsCHEN CHIEN-HAO
2 patentsHUANG KUO-TAI
1 patentSAMSUNG ELECTRONICS CO LTD
1 patent(unassigned)
1 patentMASUOKA YURI
1 patentShowing the top 50 of 66 patents by PatentIndex Score.