Inventor

BLALOCK GUY

US51 patents

Patents

50 patents

US6237483B1May 29, 2001

Global planarization method and apparatus

MICRON TECHNOLOGY INC140 citations99

US5997384ADec 7, 1999

Method and apparatus for controlling planarizing characteristics in mechanical and chemical-mechanical planarization of microelectronic substrates

MICRON TECHNOLOGY INC195 citations99

US5967030AOct 19, 1999

Method for forming a semiconductor connection with a top surface having an enlarged recess

MICRON TECHNOLOGY INC74 citations97

US6420786B1Jul 16, 2002

Conductive spacer in a via

MICRON TECHNOLOGY INC49 citations96

US6333556B1Dec 25, 2001

Insulating materials

MICRON TECHNOLOGY INC65 citations96

US6313046B1Nov 6, 2001

Method of forming materials between conductive electrical components, and insulating materials

MICRON TECHNOLOGY INC50 citations96

US6062133AMay 16, 2000

Global planarization method and apparatus

MICRON TECHNOLOGY INC63 citations96

US5892285AApr 6, 1999

Semiconductor connection with a top surface having an enlarged recess

MICRON TECHNOLOGY INC48 citations96

US5779849AJul 14, 1998

Plasma reactors and method of cleaning a plasma reactor

MICRON TECHNOLOGY INC92 citations96

US5647913AJul 15, 1997

Plasma reactors

MICRON TECHNOLOGY INC95 citations96

US5300801AApr 5, 1994

Stacked capacitor construction

MICRON TECHNOLOGY INC67 citations96

US5286344AFeb 15, 1994

Process for selectively etching a layer of silicon dioxide on an underlying stop layer of silicon nitride

MICRON TECHNOLOGY INC207 citations96

US7115509B2Oct 3, 2006

Method for forming polysilicon local interconnects

MICRON TECHNOLOGY INC14 citations93

US7112542B2Sep 26, 2006

Methods of forming materials between conductive electrical components, and insulating materials

MICRON TECHNOLOGY INC18 citations93

US7078308B2Jul 18, 2006

Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate

MICRON TECHNOLOGY INC21 citations93

US6827824B1Dec 7, 2004

Enhanced collimated deposition

MICRON TECHNOLOGY INC26 citations93

US6503410B1Jan 7, 2003

Method of modifying an RF circuit of a plasma chamber to increase chamber life and process capabilities

MICRON TECHNOLOGY INC17 citations93

US6429526B1Aug 6, 2002

Method for forming a semiconductor connection with a top surface having an enlarged recess

MICRON TECHNOLOGY INC22 citations93

USRE37505EJan 15, 2002

Stacked capacitor construction

MICRON TECHNOLOGY INC17 citations93

US6171964B1Jan 9, 2001

Method of forming a conductive spacer in a via

MICRON TECHNOLOGY INC24 citations93

US6095159AAug 1, 2000

Method of modifying an RF circuit of a plasma chamber to increase chamber life and process capabilities

MICRON TECHNOLOGY INC21 citations93

US5958796ASep 28, 1999

Method for cleaning waste matter from the backside of a semiconductor wafer substrate

MICRON TECHNOLOGY INC19 citations93

US5716873AFeb 10, 1998

Method for cleaning waste matter from the backside of a semiconductor wafer substrate

MICRON TECHNOLOGY INC26 citations93

US5783100AJul 21, 1998

Method of high density plasma etching for semiconductor manufacture

MICRON TECHNOLOGY INC27 citations91

US7569468B2Aug 4, 2009

Method for forming a floating gate memory with polysilicon local interconnects

MICRON TECHNOLOGY INC8 citations84

US6501179B2Dec 31, 2002

Constructions comprising insulative materials

MICRON TECHNOLOGY INC12 citations82

US6448656B1Sep 10, 2002

System including a memory device having a semiconductor connection with a top surface having an enlarged recess

MICRON TECHNOLOGY INC11 citations82

US6043151AMar 28, 2000

Method for forming a semiconductor connection with a top surface having an enlarged recess

MICRON TECHNOLOGY INC10 citations82

US6025271AFeb 15, 2000

Method of removing surface defects or other recesses during the formation of a semiconductor device

MICRON TECHNOLOGY INC14 citations82

US5994220ANov 30, 1999

Method for forming a semiconductor connection with a top surface having an enlarged recess

MICRON TECHNOLOGY INC12 citations82

US7262503B2Aug 28, 2007

Semiconductor constructions

MICRON TECHNOLOGY INC5 citations74

US6683003B2Jan 27, 2004

Global planarization method and apparatus

MICRON TECHNOLOGY INC4 citations74

US6674158B2Jan 6, 2004

Semiconductor die package having a UV cured polymeric die coating

MICRON TECHNOLOGY INC10 citations74

US6426287B2Jul 30, 2002

Method for forming a semiconductor connection with a top surface having an enlarged recess

MICRON TECHNOLOGY INC4 citations74

US6277731B1Aug 21, 2001

Method for forming a semiconductor connection with a top surface having an enlarged recess

MICRON TECHNOLOGY INC6 citations74

US6222273B1Apr 24, 2001

System having vias including conductive spacers

MICRON TECHNOLOGY INC13 citations74

US6080675AJun 27, 2000

Method for cleaning waste matter from the backside of a semiconductor wafer substrate

MICRON TECHNOLOGY INC10 citations74

US5980688ANov 9, 1999

Plasma reactors and method of cleaning a plasma reactor

MICRON TECHNOLOGY INC9 citations74

US5945348AAug 31, 1999

Method for reducing the heights of interconnects on a projecting region with a smaller reduction in the heights of other interconnects

MICRON TECHNOLOGY INC14 citations74

US7517749B2Apr 14, 2009

Method for forming an array with polysilicon local interconnects

MICRON TECHNOLOGY INC2 citations63

US6812160B2Nov 2, 2004

Methods of forming materials between conductive electrical components, and insulating materials

MICRON TECHNOLOGY INC2 citations63

US6355566B1Mar 12, 2002

Method of removing surface defects or other recesses during the formation of a semiconductor device

MICRON TECHNOLOGY INC3 citations63

US6274897B1Aug 14, 2001

Semiconductor structure having interconnects on a projecting region and substrate

MICRON TECHNOLOGY INC4 citations63

US6228772B1May 8, 2001

Method of removing surface defects or other recesses during the formation of a semiconductor device

MICRON TECHNOLOGY INC1 citations63

US7838381B2Nov 23, 2010

Stud capacitor device and fabrication method

MICRON TECHNOLOGY INC1 citations52

USRE39194EJul 18, 2006

Method and apparatus for controlling planarizing characteristics in mechanical and chemical-mechanical planarization of microelectronic substrates

MICRON TECHNOLOGY INC0 citations52

US6858526B2Feb 22, 2005

Methods of forming materials between conductive electrical components, and insulating materials

MICRON TECHNOLOGY INC0 citations52

Showing the top 50 of 51 patents by PatentIndex Score.

BLALOCK GUY

Patents

Global planarization method and apparatus

Method and apparatus for controlling planarizing characteristics in mechanical and chemical-mechanical planarization of microelectronic substrates

Global planarization method and apparatus

Plasma reactors and method of cleaning a plasma reactor

Method of forming a stacked capacitor with striated electrode

Method for forming a semiconductor connection with a top surface having an enlarged recess

Conductive spacer in a via

Insulating materials

Method of forming materials between conductive electrical components, and insulating materials

Global planarization method and apparatus

Semiconductor connection with a top surface having an enlarged recess

Plasma reactors and method of cleaning a plasma reactor

Plasma reactors

Stacked capacitor construction

Process for selectively etching a layer of silicon dioxide on an underlying stop layer of silicon nitride

Method for forming polysilicon local interconnects

Methods of forming materials between conductive electrical components, and insulating materials

Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate

Enhanced collimated deposition

Method of modifying an RF circuit of a plasma chamber to increase chamber life and process capabilities

Method for forming a semiconductor connection with a top surface having an enlarged recess

Stacked capacitor construction

Method of forming a conductive spacer in a via

Method of modifying an RF circuit of a plasma chamber to increase chamber life and process capabilities

Method for cleaning waste matter from the backside of a semiconductor wafer substrate

Method for cleaning waste matter from the backside of a semiconductor wafer substrate

Method of high density plasma etching for semiconductor manufacture

Method for forming a floating gate memory with polysilicon local interconnects

Constructions comprising insulative materials

System including a memory device having a semiconductor connection with a top surface having an enlarged recess

Method for forming a semiconductor connection with a top surface having an enlarged recess

Method of removing surface defects or other recesses during the formation of a semiconductor device

Method for forming a semiconductor connection with a top surface having an enlarged recess

Semiconductor constructions

Global planarization method and apparatus

Semiconductor die package having a UV cured polymeric die coating

Method for forming a semiconductor connection with a top surface having an enlarged recess

Method for forming a semiconductor connection with a top surface having an enlarged recess

System having vias including conductive spacers

Method for cleaning waste matter from the backside of a semiconductor wafer substrate

Plasma reactors and method of cleaning a plasma reactor

Method for reducing the heights of interconnects on a projecting region with a smaller reduction in the heights of other interconnects

Method for forming an array with polysilicon local interconnects

Methods of forming materials between conductive electrical components, and insulating materials

Method of removing surface defects or other recesses during the formation of a semiconductor device

Semiconductor structure having interconnects on a projecting region and substrate

Method of removing surface defects or other recesses during the formation of a semiconductor device

Stud capacitor device and fabrication method

Method and apparatus for controlling planarizing characteristics in mechanical and chemical-mechanical planarization of microelectronic substrates

Methods of forming materials between conductive electrical components, and insulating materials