Inventor
CHEN CHENG-ENG D
US5 patents
Patents
5 patentsUS4864375ASep 5, 1989
Dram cell and method
TEXAS INSTRUMENTS INC68 citations93
US5026656AJun 25, 1991
MOS transistor with improved radiation hardness
TEXAS INSTRUMENTS INC32 citations91
US4974051ANov 27, 1990
MOS transistor with improved radiation hardness
TEXAS INSTRUMENTS INC32 citations91
US5166770ANov 24, 1992
Silicided structures having openings therein
TEXAS INSTRUMENTS INC12 citations73
US5047361ASep 10, 1991
NMOS transistor having inversion layer source/drain contacts
TEXAS INSTRUMENTS INC6 citations61