Inventor
INAGAWA HIROSHI
JP37 patents
⚠️ This page may combine multiple inventors who share the name “INAGAWA HIROSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS TECH CORP
13 patentsUS7361557B2Apr 22, 2008
Insulated gate type semiconductor device and method for fabricating the same
RENESAS TECH CORP26 citations96
US6861703B2Mar 1, 2005
Semiconductor device and method for fabricating the same
RENESAS TECH CORP19 citations92
US6858896B2Feb 22, 2005
Insulated gate type semiconductor device and method for fabricating the same
RENESAS TECH CORP19 citations92
US7723753B2May 25, 2010
Semiconductor device and manufacturing method of the same
RENESAS TECH CORP9 citations82
US7585732B2Sep 8, 2009
Insulated gate type semiconductor device and method for fabricating the same
RENESAS TECH CORP1 citations63
US7378690B2May 27, 2008
Method for forming patterns on a semiconductor device using a lift off technique
RENESAS TECH CORP1 citations62
US7358141B2Apr 15, 2008
Semiconductor device and method for fabricating the same
RENESAS TECH CORP2 citations62
US7132320B2Nov 7, 2006
Method for manufacturing semiconductor device
RENESAS TECH CORP3 citations62
US7029938B2Apr 18, 2006
Method for forming patterns on a semiconductor device using a lift off technique
RENESAS TECH CORP3 citations62
US6989301B2Jan 24, 2006
Method for manufacturing semiconductor device
RENESAS TECH CORP1 citations62
US7214558B2May 8, 2007
Method for forming patterns on a semiconductor device using a lift off technique
RENESAS TECH CORP0 citations52
US6867079B2Mar 15, 2005
Method for manufacturing semiconductor device
RENESAS TECH CORP0 citations52
US6818949B2Nov 16, 2004
Semiconductor device and method for fabricating the same
RENESAS TECH CORP0 citations52
RENESAS ELECTRONICS CORP
12 patentsUS8642401B2Feb 4, 2014
Insulated gate type semiconductor device and method for fabricating the same
RENESAS ELECTRONICS CORP2 citations74
US8377775B2Feb 19, 2013
Insulated gate type semiconductor device and method for fabricating the same
RENESAS ELECTRONICS CORP1 citations63
US7910990B2Mar 22, 2011
Insulated gate type semiconductor device and method for fabricating the same
RENESAS ELECTRONICS CORP1 citations63
US7843001B2Nov 30, 2010
Insulated gate type semiconductor device and method for fabricating the same
RENESAS ELECTRONICS CORP1 citations63
US8704291B2Apr 22, 2014
Semiconductor device and method for fabricating the same
RENESAS ELECTRONICS CORP3 citations62
US8378413B2Feb 19, 2013
Semiconductor device and method for fabricating the same
RENESAS ELECTRONICS CORP3 citations62
US7910985B2Mar 22, 2011
Semiconductor device and method for fabricating the same
RENESAS ELECTRONICS CORP3 citations62
US9793342B2Oct 17, 2017
Insulated gate type semiconductor device and method for fabricating the same
RENESAS ELECTRONICS CORP0 citations52
US9614055B2Apr 4, 2017
Semiconductor device and method for fabricating the same
RENESAS ELECTRONICS CORP0 citations52
US9246000B2Jan 26, 2016
Insulated gate type semiconductor device and method for fabricating the same
RENESAS ELECTRONICS CORP0 citations52
US8987810B2Mar 24, 2015
Semiconductor device and method for fabricating the same
RENESAS ELECTRONICS CORP0 citations52
US11652072B2May 16, 2023
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP0 citations50
HITACHI LTD
4 patentsUS6638850B1Oct 28, 2003
Method of fabricating a semiconductor device having a trench-gate structure
HITACHI LTD56 citations96
US6455378B1Sep 24, 2002
Method of manufacturing a trench gate power transistor with a thick bottom insulator
HITACHI LTD70 citations96
US6706604B2Mar 16, 2004
Method of manufacturing a trench MOS gate device
HITACHI LTD18 citations92
US6649458B2Nov 18, 2003
Method for manufacturing semiconductor device with hetero junction bipolar transistor
HITACHI LTD2 citations62
INAGAWA HIROSHI
4 patentsUS8299495B2Oct 30, 2012
Reverse conducting IGBT
INAGAWA HIROSHI8 citations83
US8278708B2Oct 2, 2012
Insulated gate type semiconductor device and method for fabricating the same
INAGAWA HIROSHI2 citations73
US8148224B2Apr 3, 2012
Insulated gate type semiconductor device and method for fabricating the same
INAGAWA HIROSHI2 citations73
US8168498B2May 1, 2012
Insulated gate type semiconductor device and method for fabricating the same
INAGAWA HIROSHI1 citations62