Inventor
HUANG CHIN-LING
TW35 patents
⚠️ This page may combine multiple inventors who share the name “HUANG CHIN-LING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NANYA TECHNOLOGY CORP
33 patentsUS7026647B2Apr 11, 2006
Device and method for detecting alignment of active areas and memory cell structures in DRAM devices
NANYA TECHNOLOGY CORP11 citations84
US6902942B2Jun 7, 2005
Device and method for detecting alignment of deep trench capacitors and word lines in DRAM devices
NANYA TECHNOLOGY CORP12 citations84
US11521924B2Dec 6, 2022
Semiconductor device with fuse and anti-fuse structures and method for forming the same
NANYA TECHNOLOGY CORP2 citations73
US11417737B2Aug 16, 2022
Semiconductor structure having vertical fin with oxidized sidewall and method of manufacturing the same
NANYA TECHNOLOGY CORP2 citations73
US11121083B2Sep 14, 2021
Semiconductor device with fuse-detecting structure
NANYA TECHNOLOGY CORP5 citations73
US11088078B2Aug 10, 2021
Semiconductor device and method for manufacturing the same
NANYA TECHNOLOGY CORP2 citations73
US6891216B1May 10, 2005
Test structure of DRAM
NANYA TECHNOLOGY CORP11 citations73
US11257756B1Feb 22, 2022
Antifuse structure
NANYA TECHNOLOGY CORP2 citations68
US12514000B2Dec 30, 2025
Semiconductor device structure with fuse and resistor and method for preparing the same
NANYA TECHNOLOGY CORP0 citations62
US12408444B2Sep 2, 2025
Semiconductor device structure with fuse and resistor and method for preparing the same
NANYA TECHNOLOGY CORP0 citations62
US11876045B2Jan 16, 2024
Method for preparing semiconductor device with copper-manganese liner
NANYA TECHNOLOGY CORP0 citations62
US11735520B2Aug 22, 2023
Method for fabricating semiconductor device with programmable anti-fuse feature
NANYA TECHNOLOGY CORP0 citations62
US11705394B2Jul 18, 2023
Semiconductor device with fuse and anti-fuse structures
NANYA TECHNOLOGY CORP0 citations62
US11670389B2Jun 6, 2023
Programmable memory device
NANYA TECHNOLOGY CORP0 citations62
US11658115B2May 23, 2023
Semiconductor device with copper-manganese liner and method for forming the same
NANYA TECHNOLOGY CORP0 citations62
US11610840B2Mar 21, 2023
Semiconductor device with air gaps between adjacent conductive lines
NANYA TECHNOLOGY CORP0 citations62
US11588029B2Feb 21, 2023
Method of manufacturing semiconductor structure having vertical fin with oxidized sidewall
NANYA TECHNOLOGY CORP0 citations62
US11575016B2Feb 7, 2023
Method for fabricating a semiconductor device with a programmable contact
NANYA TECHNOLOGY CORP0 citations62
US11515405B2Nov 29, 2022
Method for fabricating semiconductor device with programmable feature
NANYA TECHNOLOGY CORP0 citations62
US11424346B2Aug 23, 2022
Semiconductor device with programmable feature and method for fabricating the same
NANYA TECHNOLOGY CORP0 citations62
US11189565B2Nov 30, 2021
Semiconductor device with programmable anti-fuse feature and method for fabricating the same
NANYA TECHNOLOGY CORP0 citations62
US11189357B1Nov 30, 2021
Programmable memory device
NANYA TECHNOLOGY CORP1 citations62
US11081562B2Aug 3, 2021
Semiconductor device with a programmable contact and method for fabricating the same
NANYA TECHNOLOGY CORP0 citations62
US7381575B2Jun 3, 2008
Device and method for detecting alignment of active areas and memory cell structures in DRAM devices
NANYA TECHNOLOGY CORP2 citations62
US7217581B2May 15, 2007
Misalignment test structure and method thereof
NANYA TECHNOLOGY CORP4 citations62
US6984534B2Jan 10, 2006
Method and device for detecting whether the alignment of bit line contacts and active areas in DRAM devices is normal
NANYA TECHNOLOGY CORP2 citations62
US6875654B2Apr 5, 2005
Memory device and fabrication method thereof
NANYA TECHNOLOGY CORP4 citations62
US11670587B2Jun 6, 2023
Semiconductor device with copper-manganese liner and method for forming the same
NANYA TECHNOLOGY CORP0 citations52
US11244950B1Feb 8, 2022
Method for preparing a memory device
NANYA TECHNOLOGY CORP0 citations52
US10854545B1Dec 1, 2020
Anti-fuse structure
NANYA TECHNOLOGY CORP0 citations52
US7091545B2Aug 15, 2006
Memory device and fabrication method thereof
NANYA TECHNOLOGY CORP0 citations52
US6844207B2Jan 18, 2005
Method and device for detecting whether the alignment of bit line contacts and active areas in DRAM devices is normal
NANYA TECHNOLOGY CORP1 citations52
US10522556B1Dec 31, 2019
Antifuse structure
NANYA TECHNOLOGY CORP0 citations34