Inventor
NAGADOMI YASUSHI
JP32 patents
⚠️ This page may combine multiple inventors who share the name “NAGADOMI YASUSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
11 patentsUS7778078B2Aug 17, 2010
Memory system and control method thereof
TOSHIBA KK60 citations98
US9330772B2May 3, 2016
Non-volatile semiconductor memory device and memory system
TOSHIBA KK10 citations92
US9076536B2Jul 7, 2015
Non-volatile semiconductor memory device and memory system
TOSHIBA KK11 citations92
US8947933B2Feb 3, 2015
Nonvolatile semiconductor memory apparatus
TOSHIBA KK10 citations84
US8364884B2Jan 29, 2013
Memory system with a memory controller controlling parallelism of driving memories
TOSHIBA KK9 citations84
US9583200B2Feb 28, 2017
Non-volatile semiconductor memory device and memory system in which write operation is resumed after being suspended for an interrupt operation
TOSHIBA KK2 citations73
US9075740B2Jul 7, 2015
Memory system
TOSHIBA KK3 citations63
US9502116B2Nov 22, 2016
Nonvolatile semiconductor memory apparatus
TOSHIBA KK0 citations52
US9280461B2Mar 8, 2016
Memory system with selective access to first and second memories
TOSHIBA KK0 citations52
US8885417B2Nov 11, 2014
Nonvolatile semiconductor memory device
TOSHIBA KK0 citations52
US8832362B2Sep 9, 2014
Memory system controlling load capacity
TOSHIBA KK0 citations52
NAGADOMI YASUSHI
8 patentsUS8649225B2Feb 11, 2014
Non-volatile semiconductor memory device and memory system
NAGADOMI YASUSHI21 citations92
US8156393B2Apr 10, 2012
Memory system
NAGADOMI YASUSHI19 citations92
US8078923B2Dec 13, 2011
Semiconductor memory device with error correction
NAGADOMI YASUSHI27 citations92
US8732553B2May 20, 2014
Memory system and control method thereof
NAGADOMI YASUSHI15 citations84
US8582369B2Nov 12, 2013
Nonvolatile semiconductor memory device
NAGADOMI YASUSHI8 citations84
US8255762B2Aug 28, 2012
Semiconductor memory device with error correction
NAGADOMI YASUSHI10 citations84
US8595410B2Nov 26, 2013
Memory system and bus switch
NAGADOMI YASUSHI4 citations73
US8103920B2Jan 24, 2012
Memory system configured by using a nonvolatile semiconductor memory
NAGADOMI YASUSHI4 citations62
TOSHIBA MEMORY CORP
7 patentsUS10546643B2Jan 28, 2020
Non-volatile semiconductor memory device in which memory cell threshold voltages are controlled in performing write operations
TOSHIBA MEMORY CORP4 citations84
USRE47946EApr 14, 2020
Method for determining the exhaustion level of semiconductor memory
TOSHIBA MEMORY CORP2 citations73
US11011235B2May 18, 2021
Non-volatile semiconductor memory device in which erase and write operations are sequentially performed to control voltage thresholds of memory cells
TOSHIBA MEMORY CORP0 citations62
US10956039B2Mar 23, 2021
Memory system with selective access to first and second memories
TOSHIBA MEMORY CORP0 citations62
US10474360B2Nov 12, 2019
Memory system with selective access to first and second memories
TOSHIBA MEMORY CORP0 citations52
US10176877B2Jan 8, 2019
Non-volatile semiconductor memory device and memory system
TOSHIBA MEMORY CORP0 citations52
US9947411B2Apr 17, 2018
Memory system including a memory chip configured to receive an erase suspend command and a program suspend command from a controller chip
TOSHIBA MEMORY CORP0 citations52
KIOXIA CORP
5 patentsUS11749352B2Sep 5, 2023
Non-volatile semiconductor memory device and memory system
KIOXIA CORP2 citations73
US12272405B2Apr 8, 2025
Non-volatile semiconductor memory device and memory system
KIOXIA CORP0 citations62
US12242723B2Mar 4, 2025
Memory system with selective access to first and second memories
KIOXIA CORP0 citations62
US11836347B2Dec 5, 2023
Memory system with selective access to first and second memories
KIOXIA CORP0 citations62
US11494077B2Nov 8, 2022
Memory system with selective access to first and second memories
KIOXIA CORP0 citations62