Inventor

KAO YUN-FENG

TW23 patents

Patents

23 patents

US12593442B2Mar 31, 2026

Semiconductor device including integrated capacitor and vertical channel transistor and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12568812B2Mar 3, 2026

Back-end-of-line CMOS inverter having twin channels and one gate electrode and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12394707B2Aug 19, 2025

Back-end-of-line CMOS inverter having reduced size and reduced short-channel effects and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12309990B2May 20, 2025

Data backup unit for static random-access memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12249608B2Mar 11, 2025

Method for manufacturing semiconductor structure and semiconductor structure thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12176022B2Dec 24, 2024

Semiconductor device including integrated capacitor and vertical channel transistor and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12513940B2Dec 30, 2025

Vertical transistors and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61

US12148691B2Nov 19, 2024

Three-dimensional integrated structure and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61

US12002884B2Jun 4, 2024

Dual gate vertical thin film transistors and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61

US12550318B2Feb 10, 2026

Data storage node voltage monitor circuit and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58

US12300294B2May 13, 2025

Cantilever nanoelectromechanical decoder circuit and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58

US12538492B2Jan 27, 2026

IC memory device implementing an imply function

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

US12419113B2Sep 16, 2025

Back-end-of-line semiconductor device structure providing a not-gate logic function and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

US12363919B2Jul 15, 2025

Capacitor structure and method of making the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

US12267992B2Apr 1, 2025

Memory device having capacitor structure and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

US12249371B2Mar 11, 2025

Reconfigurable in-memory physically unclonable function

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

US12148471B2Nov 19, 2024

Reconfigurable computational memory device, operation method of the reconfigurable computational memory device and semiconductor die including the reconfigurable computational memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

US11695039B2Jul 4, 2023

Semiconductor device including an active component and a barrier pattern surrounding the active component and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50

US12424547B2Sep 23, 2025

Back-end-of-line memory devices and methods for operating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48

KAO YUN-FENG

Patents

Semiconductor device including integrated capacitor and vertical channel transistor and methods of forming the same

Back-end-of-line CMOS inverter having twin channels and one gate electrode and methods of forming the same

Back-end-of-line CMOS inverter having reduced size and reduced short-channel effects and methods of forming the same

Data backup unit for static random-access memory device

Method for manufacturing semiconductor structure and semiconductor structure thereof

Programming and reading circuit for dynamic random access memory

Transistor device having fin-shaped channel and methods for forming the same

Back-end active device, semiconductor device and semiconductor chip

Memory integrated circuit

Semiconductor device including integrated capacitor and vertical channel transistor and methods of forming the same

Vertical transistors and methods for forming the same

Three-dimensional integrated structure and manufacturing method thereof

Dual gate vertical thin film transistors and methods for forming the same

Data storage node voltage monitor circuit and methods for forming the same

Cantilever nanoelectromechanical decoder circuit and methods for forming the same

IC memory device implementing an imply function

Back-end-of-line semiconductor device structure providing a not-gate logic function and methods of forming the same

Capacitor structure and method of making the same

Memory device having capacitor structure and method of forming the same

Reconfigurable in-memory physically unclonable function

Reconfigurable computational memory device, operation method of the reconfigurable computational memory device and semiconductor die including the reconfigurable computational memory device

Semiconductor device including an active component and a barrier pattern surrounding the active component and method of forming the same

Back-end-of-line memory devices and methods for operating the same