Inventor
WEI CHE-CHIA
US47 patents
⚠️ This page may combine multiple inventors who share the name “WEI CHE-CHIA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SGS THOMSON MICROELECTRONICS
18 patentsUS5276347AJan 4, 1994
Gate overlapping LDD structure
SGS THOMSON MICROELECTRONICS73 citations96
US5260229ANov 9, 1993
Method of forming isolated regions of oxide
SGS THOMSON MICROELECTRONICS86 citations96
US5108951AApr 28, 1992
Method for forming a metal contact
SGS THOMSON MICROELECTRONICS80 citations96
US5304504AApr 19, 1994
Method of forming a gate overlap LDD structure
SGS THOMSON MICROELECTRONICS30 citations93
US5124280AJun 23, 1992
Local interconnect for integrated circuits
SGS THOMSON MICROELECTRONICS35 citations93
US5246883ASep 21, 1993
Semiconductor contact via structure and method
SGS THOMSON MICROELECTRONICS22 citations91
US5837587ANov 17, 1998
Method of forming an integrated circuit device
SGS THOMSON MICROELECTRONICS16 citations82
US5369303ANov 29, 1994
Self-aligned contact process
SGS THOMSON MICROELECTRONICS19 citations82
US5444019AAug 22, 1995
Semiconductor contact via structure and method
SGS THOMSON MICROELECTRONICS11 citations74
US5349229ASep 20, 1994
Local interconnect for integrated circuits
SGS THOMSON MICROELECTRONICS15 citations74
US5346860ASep 13, 1994
Method for fabricating an interconnect structure in an integrated circuit
SGS THOMSON MICROELECTRONICS12 citations74
US5317192AMay 31, 1994
Semiconductor contact via structure having amorphous silicon side walls
SGS THOMSON MICROELECTRONICS15 citations74
US5313084AMay 17, 1994
Interconnect structure for an integrated circuit
SGS THOMSON MICROELECTRONICS7 citations74
US5595935AJan 21, 1997
Method for forming interconnect in integrated circuits
SGS THOMSON MICROELECTRONICS9 citations73
US5506440AApr 9, 1996
Poly-buffered LOCOS process
SGS THOMSON MICROELECTRONICS5 citations63
US5500382AMar 19, 1996
Self-aligned contact process
SGS THOMSON MICROELECTRONICS2 citations63
US5434448AJul 18, 1995
Programmable contact structure
SGS THOMSON MICROELECTRONICS6 citations63
US5500557AMar 19, 1996
Structure and method for fabricating integrated circuits
SGS THOMSON MICROELECTRONICS0 citations51
TEXAS INSTRUMENTS INC
14 patentsUS4657628AApr 14, 1987
Process for patterning local interconnects
TEXAS INSTRUMENTS INC213 citations99
US4975756ADec 4, 1990
SRAM with local interconnect
TEXAS INSTRUMENTS INC181 citations98
US5043778AAug 27, 1991
Oxide-isolated source/drain transistor
TEXAS INSTRUMENTS INC76 citations96
US5010032AApr 23, 1991
Process for making CMOS device with both P+ and N+ gates including refractory metal silicide and nitride interconnects
TEXAS INSTRUMENTS INC107 citations96
US4963502AOct 16, 1990
Method of making oxide-isolated source/drain transistor
TEXAS INSTRUMENTS INC101 citations96
US4890141ADec 26, 1989
CMOS device with both p+ and n+ gates
TEXAS INSTRUMENTS INC62 citations96
US4788160ANov 29, 1988
Process for formation of shallow silicided junctions
TEXAS INSTRUMENTS INC92 citations96
US4746219AMay 24, 1988
Local interconnect
TEXAS INSTRUMENTS INC68 citations96
US4690730ASep 1, 1987
Oxide-capped titanium silicide formation
TEXAS INSTRUMENTS INC87 citations96
US4676866AJun 30, 1987
Process to increase tin thickness
TEXAS INSTRUMENTS INC67 citations96
US4920073AApr 24, 1990
Selective silicidation process using a titanium nitride protective layer
TEXAS INSTRUMENTS INC67 citations95
US5326724AJul 5, 1994
Oxide-capped titanium silicide formation
TEXAS INSTRUMENTS INC33 citations93
US5173450ADec 22, 1992
Titanium silicide local interconnect process
TEXAS INSTRUMENTS INC43 citations93
US5166770ANov 24, 1992
Silicided structures having openings therein
TEXAS INSTRUMENTS INC12 citations73
ST MICROELECTRONICS INC
9 patentsUS5841195ANov 24, 1998
Semiconductor contact via structure
ST MICROELECTRONICS INC45 citations94
US6159836ADec 12, 2000
Method for forming programmable contact structure
ST MICROELECTRONICS INC13 citations74
US5894158AApr 13, 1999
Having halo regions integrated circuit device structure
ST MICROELECTRONICS INC9 citations74
US6287963B1Sep 11, 2001
Method for forming a metal contact
ST MICROELECTRONICS INC5 citations63
US6027979AFeb 22, 2000
Method of forming an integrated circuit device
ST MICROELECTRONICS INC2 citations63
US5977607ANov 2, 1999
Method of forming isolated regions of oxide
ST MICROELECTRONICS INC2 citations63
US5930673AJul 27, 1999
Method for forming a metal contact
ST MICROELECTRONICS INC4 citations63
US6617242B1Sep 9, 2003
Method for fabricating interlevel contacts of aluminum/refractory metal alloys
ST MICROELECTRONICS INC6 citations62
US6242811B1Jun 5, 2001
Interlevel contact including aluminum-refractory metal alloy formed during aluminum deposition at an elevated temperature
ST MICROELECTRONICS INC5 citations62
CHARTERED SEMICONDUCTOR MFG
5 patentsUS5610083AMar 11, 1997
Method of making back gate contact for silicon on insulator technology
CHARTERED SEMICONDUCTOR MFG98 citations95
US5677238AOct 14, 1997
Semiconductor contact metallization
CHARTERED SEMICONDUCTOR MFG27 citations91
US5624871AApr 29, 1997
Method for making electrical local interconnects
CHARTERED SEMICONDUCTOR MFG12 citations68
US6313034B1Nov 6, 2001
Method for forming integrated circuit device structures from semiconductor substrate oxidation mask layers
CHARTERED SEMICONDUCTOR MFG3 citations63
US5923075AJul 13, 1999
Definition of anti-fuse cell for programmable gate array application
CHARTERED SEMICONDUCTOR MFG1 citations48