Inventor
HWANG KI-HYUN
KR84 patents
⚠️ This page may combine multiple inventors who share the name “HWANG KI-HYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
29 patentsUS7622383B2Nov 24, 2009
Methods of forming conductive polysilicon thin films via atomic layer deposition and methods of manufacturing semiconductor devices including such polysilicon thin films
SAMSUNG ELECTRONICS CO LTD65 citations97
US7419888B2Sep 2, 2008
Method of forming a silicon-rich nanocrystalline structure by an atomic layer deposition process and method of manufacturing a non-volatile semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD71 citations97
US6385020B1May 7, 2002
Methods of forming HSG capacitors from nonuniformly doped amorphous silicon layers and HSG capacitors formed thereby
SAMSUNG ELECTRONICS CO LTD69 citations96
US6329266B1Dec 11, 2001
Methods of forming isolation trenches including damaging a trench isolation mask
SAMSUNG ELECTRONICS CO LTD59 citations96
US6700153B2Mar 2, 2004
One-cylinder stack capacitor and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD32 citations93
US6162700ADec 19, 2000
Method of forming a trench isolation structure in a semiconductor substrate
SAMSUNG ELECTRONICS CO LTD38 citations93
US7510935B2Mar 31, 2009
Method of manufacturing a charge-trapping dielectric and method of manufacturing a sonos-type non-volatile semiconductor device
SAMSUNG ELECTRONICS CO LTD26 citations92
US6797561B2Sep 28, 2004
Method of fabricating a capacitor of a semiconductor device
SAMSUNG ELECTRONICS CO LTD26 citations92
US6730570B2May 4, 2004
Method for forming a self-aligned contact of a semiconductor device and method for manufacturing a semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD33 citations92
US6207488B1Mar 27, 2001
Method for forming a tantalum oxide capacitor using two-step rapid thermal nitridation
SAMSUNG ELECTRONICS CO LTD25 citations91
US6583056B2Jun 24, 2003
Storage electrode of a semiconductor memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD19 citations90
US11322578B2May 3, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations84
US9431416B2Aug 30, 2016
Vertical-type nonvolatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US9276133B2Mar 1, 2016
Vertical memory devices and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD12 citations84
US7723755B2May 25, 2010
Semiconductor having buried word line cell structure and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD18 citations84
US6911364B2Jun 28, 2005
One-cylinder stack capacitor and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD13 citations84
US6214688B1Apr 10, 2001
Methods of forming integrated circuit capacitors having U-shaped electrodes
SAMSUNG ELECTRONICS CO LTD19 citations84
US9257573B2Feb 9, 2016
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD6 citations83
US7007933B2Mar 7, 2006
Method and apparatus for supplying a source gas
SAMSUNG ELECTRONICS CO LTD13 citations83
US9564499B2Feb 7, 2017
Three-dimensional semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations82
US6620686B2Sep 16, 2003
Methods of forming capacitors having a polymer on a portion thereof that inhibits the formation of hemispherical grain (HSG) nodules on that portion and capacitors formed thereby
SAMSUNG ELECTRONICS CO LTD6 citations74
US11728372B2Aug 15, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations73
US7153750B2Dec 26, 2006
Methods of forming capacitors of semiconductor devices including silicon-germanium and metallic electrodes
SAMSUNG ELECTRONICS CO LTD7 citations73
US7005389B2Feb 28, 2006
Methods for forming a thin film on an integrated circuit device by sequentially providing energies to activate the reactants
SAMSUNG ELECTRONICS CO LTD8 citations73
US6838719B2Jan 4, 2005
Dram cell capacitors having U-shaped electrodes with rough inner and outer surfaces
SAMSUNG ELECTRONICS CO LTD10 citations73
US9613800B2Apr 4, 2017
Methods of manufacturing semiconductor devices including an oxide layer
SAMSUNG ELECTRONICS CO LTD2 citations71
US6809363B2Oct 26, 2004
Storage electrode of a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD9 citations71
US7973355B2Jul 5, 2011
Nonvolatile memory devices with multiple layers having band gap relationships among the layers
SAMSUNG ELECTRONICS CO LTD2 citations63
US12125872B2Oct 22, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
NAM PHIL-OUK
3 patentsUS9324730B2Apr 26, 2016
Vertical memory devices and methods of manufacturing the same
NAM PHIL-OUK26 citations93
US8987805B2Mar 24, 2015
Vertical type semiconductor devices including oxidation target layers
NAM PHIL-OUK25 citations92
US9461061B2Oct 4, 2016
Vertical memory devices and methods of manufacturing the same
NAM PHIL-OUK6 citations72
KIM JIN-GYUN
3 patentsUS8129264B2Mar 6, 2012
Method of fabricating a semiconductor device
KIM JIN-GYUN36 citations92
US9368646B2Jun 14, 2016
Memory devices and methods of manufacturing the same
KIM JIN-GYUN13 citations83
US8497555B2Jul 30, 2013
Vertical memory devices including indium and/or gallium channel doping
KIM JIN-GYUN2 citations62
YANG JUN-KYU
2 patentsJANG BYONG-HYUN
1 patentCHAE SOO-DOO
1 patentLEE SANG-HOON
1 patentSON YONG-HOON
1 patentYOO DONG-CHUL
1 patentJEE JUNG GEUN
1 patentKIM HYO-JUNG
1 patentKIM BI O
1 patentLEE SUNG-HAE
1 patentLEE JOON-SUK
1 patentJEE JUNG-GEUN
1 patentKIM BI-O
1 patentCHOI EUN-YEOUNG
1 patentShowing the top 50 of 84 patents by PatentIndex Score.