P

Inventor

HWANG KI-HYUN

KR84 patents
⚠️ This page may combine multiple inventors who share the name “HWANG KI-HYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

29 patents
US7622383B2Nov 24, 2009

Methods of forming conductive polysilicon thin films via atomic layer deposition and methods of manufacturing semiconductor devices including such polysilicon thin films

SAMSUNG ELECTRONICS CO LTD65 citations97
US7419888B2Sep 2, 2008

Method of forming a silicon-rich nanocrystalline structure by an atomic layer deposition process and method of manufacturing a non-volatile semiconductor device using the same

SAMSUNG ELECTRONICS CO LTD71 citations97
US6385020B1May 7, 2002

Methods of forming HSG capacitors from nonuniformly doped amorphous silicon layers and HSG capacitors formed thereby

SAMSUNG ELECTRONICS CO LTD69 citations96
US6329266B1Dec 11, 2001

Methods of forming isolation trenches including damaging a trench isolation mask

SAMSUNG ELECTRONICS CO LTD59 citations96
US6700153B2Mar 2, 2004

One-cylinder stack capacitor and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD32 citations93
US6162700ADec 19, 2000

Method of forming a trench isolation structure in a semiconductor substrate

SAMSUNG ELECTRONICS CO LTD38 citations93
US7510935B2Mar 31, 2009

Method of manufacturing a charge-trapping dielectric and method of manufacturing a sonos-type non-volatile semiconductor device

SAMSUNG ELECTRONICS CO LTD26 citations92
US6797561B2Sep 28, 2004

Method of fabricating a capacitor of a semiconductor device

SAMSUNG ELECTRONICS CO LTD26 citations92
US6730570B2May 4, 2004

Method for forming a self-aligned contact of a semiconductor device and method for manufacturing a semiconductor device using the same

SAMSUNG ELECTRONICS CO LTD33 citations92
US6207488B1Mar 27, 2001

Method for forming a tantalum oxide capacitor using two-step rapid thermal nitridation

SAMSUNG ELECTRONICS CO LTD25 citations91
US6583056B2Jun 24, 2003

Storage electrode of a semiconductor memory device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD19 citations90
US11322578B2May 3, 2022

Semiconductor device

SAMSUNG ELECTRONICS CO LTD5 citations84
US9431416B2Aug 30, 2016

Vertical-type nonvolatile memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US9276133B2Mar 1, 2016

Vertical memory devices and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD12 citations84
US7723755B2May 25, 2010

Semiconductor having buried word line cell structure and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD18 citations84
US6911364B2Jun 28, 2005

One-cylinder stack capacitor and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD13 citations84
US6214688B1Apr 10, 2001

Methods of forming integrated circuit capacitors having U-shaped electrodes

SAMSUNG ELECTRONICS CO LTD19 citations84
US9257573B2Feb 9, 2016

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD6 citations83
US7007933B2Mar 7, 2006

Method and apparatus for supplying a source gas

SAMSUNG ELECTRONICS CO LTD13 citations83
US9564499B2Feb 7, 2017

Three-dimensional semiconductor memory devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations82
US6620686B2Sep 16, 2003

Methods of forming capacitors having a polymer on a portion thereof that inhibits the formation of hemispherical grain (HSG) nodules on that portion and capacitors formed thereby

SAMSUNG ELECTRONICS CO LTD6 citations74
US11728372B2Aug 15, 2023

Semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations73
US7153750B2Dec 26, 2006

Methods of forming capacitors of semiconductor devices including silicon-germanium and metallic electrodes

SAMSUNG ELECTRONICS CO LTD7 citations73
US7005389B2Feb 28, 2006

Methods for forming a thin film on an integrated circuit device by sequentially providing energies to activate the reactants

SAMSUNG ELECTRONICS CO LTD8 citations73
US6838719B2Jan 4, 2005

Dram cell capacitors having U-shaped electrodes with rough inner and outer surfaces

SAMSUNG ELECTRONICS CO LTD10 citations73
US9613800B2Apr 4, 2017

Methods of manufacturing semiconductor devices including an oxide layer

SAMSUNG ELECTRONICS CO LTD2 citations71
US6809363B2Oct 26, 2004

Storage electrode of a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD9 citations71
US7973355B2Jul 5, 2011

Nonvolatile memory devices with multiple layers having band gap relationships among the layers

SAMSUNG ELECTRONICS CO LTD2 citations63
US12125872B2Oct 22, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62

NAM PHIL-OUK

3 patents

KIM JIN-GYUN

3 patents

YANG JUN-KYU

2 patents

JANG BYONG-HYUN

1 patent

CHAE SOO-DOO

1 patent

LEE SANG-HOON

1 patent

SON YONG-HOON

1 patent

YOO DONG-CHUL

1 patent

JEE JUNG GEUN

1 patent

KIM HYO-JUNG

1 patent

KIM BI O

1 patent

LEE SUNG-HAE

1 patent

LEE JOON-SUK

1 patent

JEE JUNG-GEUN

1 patent

KIM BI-O

1 patent

CHOI EUN-YEOUNG

1 patent

Showing the top 50 of 84 patents by PatentIndex Score.