Inventor
WEI HSIAO-KUAN
TW22 patents
Patents
22 patentsUS10790142B2Sep 29, 2020
Selective capping processes and structures formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US10770288B2Sep 8, 2020
Selective capping processes and structures formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US11024505B2Jun 1, 2021
Gate structure passivating species drive-in method and structure formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations82
US10854459B2Dec 1, 2020
Gate structure passivating species drive-in method and structure formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations82
US11380542B2Jul 5, 2022
Selective capping processes and structures formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US9679984B2Jun 13, 2017
Metal gate structure with multi-layer composition
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11710638B2Jul 25, 2023
Gate structure passivating species drive-in method and structure formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11830742B2Nov 28, 2023
Selective capping processes and structures formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11211465B2Dec 28, 2021
Semiconductor device having gate dielectric and inhibitor film over gate dielectric
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10998414B2May 4, 2021
Metal gate structure with multi-layer composition
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12354876B2Jul 8, 2025
Gate structure passivating species drive-in method and structure formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12294022B2May 6, 2025
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11721740B2Aug 8, 2023
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11088257B2Aug 10, 2021
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10510854B2Dec 17, 2019
Semiconductor device having gate body and inhibitor film between conductive prelayer over gate body and conductive layer over inhibitor film
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10014382B2Jul 3, 2018
Semiconductor device with sidewall passivation and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11201227B2Dec 14, 2021
Gate structure with barrier layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US11145747B2Oct 12, 2021
FinFET structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10707318B2Jul 7, 2020
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12514130B2Dec 30, 2025
Magneto-resistive random-access memory (MRAM) devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10515807B1Dec 24, 2019
Methods of fabricating semiconductor devices with metal-gate work-function tuning layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US12363924B2Jul 15, 2025
Semiconductor devices and methods for fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations43