Inventor

OVSHINSKY STANFORD R

US321 patents

⚠️ This page may combine multiple inventors who share the name “OVSHINSKY STANFORD R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

OVSHINSKY STANFORD R

ENERGY CONVERSION DEVICES INC

Methods of factoring and modular arithmetic

Multibit single cell memory element having tapered contact

Universal memory element with systems employing same and apparatus and method for reading, writing and programming same

Memory element with energy control mechanism

Universal memory element and method of programming same

Composite memory material comprising a mixture of phase-change memory material and dielectric material

Second-layer phase change memory array on top of a logic device

Integrated drivers for flat panel displays employing chalcogenide logic elements

Multibit single cell memory element having tapered contact

Logical operation circuit employing two-terminal chalcogenide switches

Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom

Electrically erasable memory elements characterized by reduced current and improved thermal stability

Electrically erasable memory elements having improved set resistance stability

Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom

Electrically erasable memory elements characterized by reduced current and improved thermal stability

Electrically erasable memory elements having reduced switching current requirements and increased write/erase cycle life

Electrically erasable phase change memory

Vertically interconnected parallel distributed processor

Congruent state changeable optical memory material and device

Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements

Thin film field effect transistor and method of making same

Method for making electronic matrix arrays

P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same

Thin film field effect transistor and method of making same

Data storage medium incorporating a transition metal for increased switching speed

Continuous deposition of activated process gases

Integrated circuit compatible thin film field effect transistor and method of making same

Thin film field effect transistor

Integrated circuit compatible thin film field effect transistor and method of making same

Programmable semiconductor structures and methods for using the same

Method for making, parallel preprogramming or field programming of electronic matrix arrays

Method of making p-doped silicon films

Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process

Amorphous semiconductors equivalent to crystalline semiconductors

High temperature amorphous semiconductor member and method of making the same

Recording and retrieving information in an amorphous memory material using a catalytic material

Method and apparatus for recording information

Hydrogen-based ecosystem

Homogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements

Optical recording medium having a plurality of discrete phase change data recording points

Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom

High quality photovoltaic semiconductor material and laser ablation method of fabrication same

Thin film electrical devices with amorphous carbon electrodes and method of making same

OVONYX INC

Electrically programmable memory element with improved contacts

Electrically programmable memory element with improved contacts

OVONIC BATTERY CO

Finely divided metal catalyst and method for making same

Apparatus for deposition of thin-film, solid state batteries

(unassigned)

Optical recording media having increased erasability

SOVONICS SOLAR SYSTEMS

Method for optimizing photoresponsive amorphous alloys and devices

OVSHINSKY STANFORD R

Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements