Inventor
XU SHUMING
US55 patents
⚠️ This page may combine multiple inventors who share the name “XU SHUMING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
AGERE SYSTEMS INC
16 patentsUS7148540B2Dec 12, 2006
Graded conductive structure for use in a metal-oxide-semiconductor device
AGERE SYSTEMS INC65 citations98
US6927453B2Aug 9, 2005
Metal-oxide-semiconductor device including a buried lightly-doped drain region
AGERE SYSTEMS INC59 citations96
US6710416B1Mar 23, 2004
Split-gate metal-oxide-semiconductor device
AGERE SYSTEMS INC61 citations96
US7005703B2Feb 28, 2006
Metal-oxide-semiconductor device having improved performance and reliability
AGERE SYSTEMS INC28 citations93
US6890804B1May 10, 2005
Metal-oxide-semiconductor device formed in silicon-on-insulator
AGERE SYSTEMS INC38 citations93
US7820517B2Oct 26, 2010
Control of hot carrier injection in a metal-oxide semiconductor device
AGERE SYSTEMS INC17 citations91
US6828628B2Dec 7, 2004
Diffused MOS devices with strained silicon portions and methods for forming same
AGERE SYSTEMS INC25 citations91
US7087959B2Aug 8, 2006
Metal-oxide-semiconductor device having an enhanced shielding structure
AGERE SYSTEMS INC17 citations84
US7138690B2Nov 21, 2006
Shielding structure for use in a metal-oxide-semiconductor device
AGERE SYSTEMS INC12 citations82
US7279744B2Oct 9, 2007
Control of hot carrier injection in a metal-oxide semiconductor device
AGERE SYSTEMS INC8 citations72
US7579245B2Aug 25, 2009
Dual-gate metal-oxide-semiconductor device
AGERE SYSTEMS INC2 citations63
US7329922B2Feb 12, 2008
Dual-gate metal-oxide semiconductor device
AGERE SYSTEMS INC5 citations63
US7297606B2Nov 20, 2007
Metal-oxide-semiconductor device including a buried lightly-doped drain region
AGERE SYSTEMS INC3 citations63
US7067890B2Jun 27, 2006
Thick oxide region in a semiconductor device
AGERE SYSTEMS INC2 citations63
US7041561B2May 9, 2006
Enhanced substrate contact for a semiconductor device
AGERE SYSTEMS INC5 citations62
US7335565B2Feb 26, 2008
Metal-oxide-semiconductor device having improved performance and reliability
AGERE SYSTEMS INC1 citations52
COOLSTAR TECH INC
8 patentsUS10116347B1Oct 30, 2018
Lossless switch for radio frequency front-end module
COOLSTAR TECH INC18 citations94
US10141271B1Nov 27, 2018
Semiconductor device having enhanced high-frequency capability and methods for making same
COOLSTAR TECH INC13 citations84
US10735044B2Aug 4, 2020
Lossless switch for radio frequency front-end module
COOLSTAR TECH INC5 citations73
US10566270B2Feb 18, 2020
Enhanced thermal transfer in a semiconductor structure
COOLSTAR TECH INC2 citations73
US10224268B1Mar 5, 2019
Enhanced thermal transfer in a semiconductor structure
COOLSTAR TECH INC3 citations73
US9628118B2Apr 18, 2017
Adaptive envelope tracking for biasing radio frequency power amplifiers
COOLSTAR TECH INC6 citations71
US10236288B2Mar 19, 2019
Integrated on-chip junction capacitor for power management integrated circuit device
COOLSTAR TECH INC1 citations62
US10134641B2Nov 20, 2018
Enhanced integration of DMOS and CMOS semiconductor devices
COOLSTAR TECH INC1 citations52
CICLON SEMICONDUCTOR DEVICE CO
5 patentsUS7282765B2Oct 16, 2007
Power LDMOS transistor
CICLON SEMICONDUCTOR DEVICE CO121 citations98
US7235845B2Jun 26, 2007
Power LDMOS transistor
CICLON SEMICONDUCTOR DEVICE CO72 citations98
US7745846B2Jun 29, 2010
LDMOS integrated Schottky diode
CICLON SEMICONDUCTOR DEVICE CO39 citations92
US7446375B2Nov 4, 2008
Quasi-vertical LDMOS device having closed cell layout
CICLON SEMICONDUCTOR DEVICE CO48 citations92
US7126193B2Oct 24, 2006
Metal-oxide-semiconductor device with enhanced source electrode
CICLON SEMICONDUCTOR DEVICE CO38 citations91
INST OF MICROELECTRONICS
4 patentsUS6461902B1Oct 8, 2002
RF LDMOS on partial SOI substrate
INST OF MICROELECTRONICS57 citations96
US6495903B2Dec 17, 2002
Integrated circuit inductor
INST OF MICROELECTRONICS25 citations92
US6908825B2Jun 21, 2005
Method of making an integrated circuit inductor wherein a plurality of apertures are formed beneath an inductive loop
INST OF MICROELECTRONICS8 citations73
US6667516B2Dec 23, 2003
RF LDMOS on partial SOI substrate
INST OF MICROELECTRONICS2 citations62
TEXAS INSTRUMENTS INC
3 patentsKOREC JACEK
3 patentsSHANGHAI BRIGHT POWER SEMICONDUCTOR CO LTD
3 patentsUS11967625B2Apr 23, 2024
Metal-oxide-semiconductor field-effect transistor having enhanced high-frequency performance
SHANGHAI BRIGHT POWER SEMICONDUCTOR CO LTD0 citations63
US12501711B2Dec 16, 2025
Three-dimensional bipolar-CMOS-DMOS (BCD) structure with integrated back-side capacitor
SHANGHAI BRIGHT POWER SEMICONDUCTOR CO LTD0 citations58
US12446298B2Oct 14, 2025
Enhanced capacitor for integration with metal-oxide semiconductor field-effect transistor
SHANGHAI BRIGHT POWER SEMICONDUCTOR CO LTD0 citations52
XU SHUMING
2 patentsTEXAS INSTR LEHIGH VALLEY INC
1 patentCICION SEMICONDUCTOR DEVICE CO
1 patentVISHAY SEMICONDUCTOR GMBH
1 patentVISHAY SEMICONDCUTOR GMBH
1 patentWANG JUN
1 patentSHIBIB MUHAMMED AYMAN
1 patentShowing the top 50 of 55 patents by PatentIndex Score.