Inventor
ETOH JUN
JP59 patents
⚠️ This page may combine multiple inventors who share the name “ETOH JUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
42 patentsUS5539279AJul 23, 1996
Ferroelectric memory
HITACHI LTD218 citations99
US5526313AJun 11, 1996
Large scale integrated circuit with sense amplifier circuits for low voltage operation
HITACHI LTD156 citations99
US5297097AMar 22, 1994
Large scale integrated circuit for low voltage operation
HITACHI LTD121 citations99
US4021835AMay 3, 1977
Semiconductor device and a method for fabricating the same
HITACHI LTD158 citations97
USRE37593EMar 19, 2002
Large scale integrated circuit with sense amplifier circuits for low voltage operation
HITACHI LTD57 citations96
US6337817B1Jan 8, 2002
Semiconductor device having redundancy circuit
HITACHI LTD34 citations96
US5617365AApr 1, 1997
Semiconductor device having redundancy circuit
HITACHI LTD48 citations96
US5602771AFeb 11, 1997
Semiconductor memory device and defect remedying method thereof
HITACHI LTD43 citations96
US5579256ANov 26, 1996
Semiconductor memory device and defect remedying method thereof
HITACHI LTD45 citations96
US5426616AJun 20, 1995
Semiconductor IC device having a voltage conversion circuit which generates an internal supply voltage having value compensated for external supply voltage variations
HITACHI LTD95 citations96
US5384740AJan 24, 1995
Reference voltage generator
HITACHI LTD54 citations96
US5265055ANov 23, 1993
Semiconductor memory having redundancy circuit
HITACHI LTD59 citations96
US5262999ANov 16, 1993
Large scale integrated circuit for low voltage operation
HITACHI LTD68 citations96
US5262993ANov 16, 1993
Semiconductor memory having redundancy circuit with means to switch power from a normal memory block to a spare memory block
HITACHI LTD41 citations96
US4994688AFeb 19, 1991
Semiconductor device having a reference voltage generating circuit
HITACHI LTD105 citations96
US4992985AFeb 12, 1991
Method for selectively initiating/terminating a test mode in an address multiplexed DRAM and address multiplexed DRAM having such a capability
HITACHI LTD34 citations96
US4811299AMar 7, 1989
Dynamic RAM device having a separate test mode capability
HITACHI LTD61 citations96
US4086642AApr 25, 1978
Protective circuit and device for metal-oxide-semiconductor field effect transistor and method for fabricating the device
HITACHI LTD119 citations96
US4873672AOct 10, 1989
Dynamic random access memory capable of fast erasing of storage data
HITACHI LTD28 citations93
US4796234AJan 3, 1989
Semiconductor memory having selectively activated blocks including CMOS sense amplifiers
HITACHI LTD48 citations93
US4716313ADec 29, 1987
Pulse drive circuit
HITACHI LTD50 citations93
US4503522AMar 5, 1985
Dynamic type semiconductor monolithic memory
HITACHI LTD29 citations93
US6515913B2Feb 4, 2003
Semiconductor memory device and defect remedying method thereof
HITACHI LTD22 citations92
US6335884B1Jan 1, 2002
Semiconductor memory device and defect remedying method thereof
HITACHI LTD22 citations92
US6212089B1Apr 3, 2001
Semiconductor memory device and defect remedying method thereof
HITACHI LTD18 citations92
US6160744ADec 12, 2000
Semiconductor memory device and defect remedying method thereof
HITACHI LTD18 citations92
US6049500AApr 11, 2000
Semiconductor memory device and defect remedying method thereof
HITACHI LTD28 citations92
US5376839ADec 27, 1994
Large scale integrated circuit having low internal operating voltage
HITACHI LTD38 citations92
US7499340B2Mar 3, 2009
Semiconductor memory device and defect remedying method thereof
HITACHI LTD8 citations84
US5955896ASep 21, 1999
Input buffer using a differential amplifier
HITACHI LTD18 citations84
US6657901B2Dec 2, 2003
Semiconductor device formed in a rectangle region on a semiconductor substrate including a voltage generating circuit
HITACHI LTD11 citations82
US6577544B2Jun 10, 2003
Semiconductor device having redundancy circuit
HITACHI LTD10 citations82
US5854508ADec 29, 1998
Semiconductor memory device having zigzag bonding pad arrangement
HITACHI LTD15 citations82
US5815448ASep 29, 1998
Semiconductor memory having redundancy circuit
HITACHI LTD16 citations82
US5402376AMar 28, 1995
Semiconductor memory having redundancy circuit
HITACHI LTD14 citations82
US5331596AJul 19, 1994
Address multiplexed dynamic RAM having a test mode capability
HITACHI LTD11 citations82
US5117393AMay 26, 1992
Method of testing memory cells in an address multiplexed dynamic ram including test mode selection
HITACHI LTD19 citations82
US7345929B2Mar 18, 2008
Semiconductor memory device and defect remedying method thereof
HITACHI LTD4 citations74
US6104647AAug 15, 2000
Semiconductor device having redundancy circuit
HITACHI LTD8 citations74
US5966336AOct 12, 1999
Semiconductor device having redundancy circuit
HITACHI LTD6 citations74
US5677880AOct 14, 1997
Semiconductor memory having redundancy circuit
HITACHI LTD9 citations74
US5467314ANov 14, 1995
Method of testing an address multiplexed dynamic RAM
HITACHI LTD10 citations74
RENESAS TECH CORP
3 patentsUS6909647B2Jun 21, 2005
Semiconductor device having redundancy circuit
RENESAS TECH CORP38 citations96
US6754114B2Jun 22, 2004
Semiconductor device having redundancy circuit
RENESAS TECH CORP13 citations93
US7106643B2Sep 12, 2006
Method for manufacturing memory device provided with a defect recovery mechanism featuring a redundancy circuit
RENESAS TECH CORP5 citations74
HITACHI VLSI ENG
2 patentsELPIDA MEMORY INC
1 patentVICTOR COMPANY OF JAPAN
1 patentHITACHI ULSI SYS CO LTD
1 patentShowing the top 50 of 59 patents by PatentIndex Score.