Inventor
IWASA SHIGEYUKI
JP54 patents
⚠️ This page may combine multiple inventors who share the name “IWASA SHIGEYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
45 patentsUS5738975AApr 14, 1998
Photosensitive resin and method for patterning by use of the same
NEC CORP149 citations99
US5994025ANov 30, 1999
Photoresist, compounds for composing the photoresist, and method of forming pattern by using the photoresist
NEC CORP93 citations97
US7432035B2Oct 7, 2008
(Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it
NEC CORP54 citations96
US7186495B2Mar 6, 2007
(Meth) acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it
NEC CORP46 citations96
US5866304AFeb 2, 1999
Photosensitive resin and method for patterning by use of the same
NEC CORP61 citations96
US5691111ANov 25, 1997
Photosensitive resin composition useful as resist for deep UV lithography containing sulfonium salts
NEC CORP47 citations96
US5635332AJun 3, 1997
Alkylsulfonium salts and photoresist compositions containing the same
NEC CORP63 citations96
US6528232B1Mar 4, 2003
Sulfonium salt compound, photoresist composition and method for patterning by employing same
NEC CORP28 citations93
US6437052B1Aug 20, 2002
Monomer having diol structure, polymer thereof, and negative photoresist composition and pattern forming method using the same
NEC CORP29 citations93
US6352813B2Mar 5, 2002
Photosensitive resin composition and patterning method using the same
NEC CORP22 citations93
US6146806ANov 14, 2000
Negative photoresist composition using polymer having 1,2-diol structure and process for forming pattern using the same
NEC CORP36 citations93
US6140010AOct 31, 2000
Negative type photoresist composition used for light beam with short wavelength and method of forming pattern using the same
NEC CORP27 citations93
US6106998AAug 22, 2000
Negative resist materials, pattern formation method making use thereof, and method of manufacturing semiconductor devices
NEC CORP44 citations93
US6074801AJun 13, 2000
Negative type photoresist composition used for light beam with short wavelength and method of forming pattern using the same
NEC CORP41 citations93
US6030747AFeb 29, 2000
Chemically amplified resist large in transparency and sensitivity to exposure light less than 248 nanometer wavelength and process of forming mask
NEC CORP29 citations93
US5756850AMay 26, 1998
Sulfonium salts having bridged cyclic alkyl group useful as resist for deep UV lithography
NEC CORP18 citations93
US5747622AMay 5, 1998
Polymer having silicon atoms and sulfonium salt units and photoresist compositions containing the same
NEC CORP21 citations93
US5621019AApr 15, 1997
Monomer having vinyl group, polymer thereof and photosensitive resin including those
NEC CORP37 citations93
US5585507ADec 17, 1996
Alkylsulfonium salts and photoresist compositions containing the same
NEC CORP35 citations93
US6866964B2Mar 15, 2005
Secondary battery
NEC CORP19 citations92
US5770346AJun 23, 1998
Photoresist and compounds for composing the photoresist
NEC CORP18 citations92
US7642011B2Jan 5, 2010
Secondary battery with a radical compound active material
NEC CORP8 citations84
US7226697B2Jun 5, 2007
Electricity storage device
NEC CORP13 citations84
US7018738B2Mar 28, 2006
Electrode and battery using same
NEC CORP11 citations84
US6638685B2Oct 28, 2003
Photoacid generator containing two kinds of sulfonium salt compound, chemically amplified resist containing the same and pattern transfer method
NEC CORP9 citations74
US6602647B2Aug 5, 2003
Sulfonium salt compound and resist composition and pattern forming method using the same
NEC CORP11 citations74
US6559337B2May 6, 2003
(Meth)acrylate, polymer, photoresist composition, and pattern forming process making use of the composition
NEC CORP10 citations74
US6469197B1Oct 22, 2002
Negative photoresist composition using polymer having 1,2-diol structure and process for forming pattern using the same
NEC CORP8 citations74
US6391529B2May 21, 2002
(Meth)acrylate, polymer photoresist composition, and pattern forming process making use of the composition
NEC CORP12 citations74
US6287746B1Sep 11, 2001
Chemically amplified resist large in transparency and sensitivity to exposure light less than 248 nanometer wavelength and process of forming mask
NEC CORP12 citations74
US6248499B1Jun 19, 2001
(Meth)acrylate, polymer, photoresist composition, and pattern forming process making use of the composition
NEC CORP6 citations74
US5723257AMar 3, 1998
Si containing high molecular compound and photosensitive resin composition
NEC CORP9 citations74
US5985522ANov 16, 1999
Photoresist and compounds for composing the photoresist
NEC CORP14 citations73
US8969483B2Mar 3, 2015
(Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it
NEC CORP2 citations63
US7544441B2Jun 9, 2009
Secondary battery having an active material radical compound
NEC CORP2 citations63
US7318981B2Jan 15, 2008
Secondary battery with a nitroxyl polymer active material
NEC CORP5 citations63
US7045248B2May 16, 2006
Secondary battery having radical compound electrode
NEC CORP4 citations63
US6849384B2Feb 1, 2005
Photoacid generators, photoresist compositions containing the same and pattering method with the use of the compositions
NEC CORP4 citations63
US6773767B2Aug 10, 2004
Liquid crystal display unit and method for manufacturing the same
NEC CORP6 citations63
US5763142AJun 9, 1998
Method for forming resist pattern
NEC CORP3 citations63
US7122277B2Oct 17, 2006
Battery and battery electrode
NEC CORP2 citations59
US7476465B2Jan 13, 2009
Electrode active material and electrode using the electrode active material and battery using the electrode
NEC CORP1 citations52
US6924079B2Aug 2, 2005
Resist resin, chemical amplification type resist, and method of forming of pattern with the same
NEC CORP0 citations52
US6893775B2May 17, 2005
Battery having active material containing neutral carbon radical compound
NEC CORP0 citations52
US10497978B2Dec 3, 2019
Power storage device
NEC CORP0 citations48
SUGURO MASAHIRO
2 patentsKUSACHI YUKI
1 patentNAKAHARA KENTARO
1 patentMAEDA KATSUMI
1 patentShowing the top 50 of 54 patents by PatentIndex Score.