Method for forming resist pattern

Abstract

Disclosed is a method for forming a resist pattern in which a chemically amplified resist which has a photosensitive acid-generating agent with a catalytic function is used, has the step of: treating the surface of nitrided metal film or nitrided semimetal film deposited on a substrate by using a substance that reduces the basicity of a basic substance which exists on the surface of nitrided metal film or nitrided semimetal film or which is chemically coupled with the nitrided metal film or nitrided semimetal film.

What is claimed is: 
     
       1. A method for forming a resist pattern in which a chemically amplified resist which includes a photosensitive acid-generating agent with a catalytic function is used, comprising the step of: treating the surface of nitrided metal film or nitrided semimetal film deposited on a substrate by using a substance that reduces the basicity of a basic substance which exists on said surface of nitrided metal film or nitrided semimetal film or which is chemically coupled with said nitrided metal film or nitrided semimetal film, wherein: said basicity-reducing substance is an organic acid halogenide represented by:   R.sup.3 --COX       where R 3  represents a hydrocarbon group selected from the group consisting of methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group, octyl group and phenyl group, or a halogenated hydrocarbon group selected from the group consisting of trifluromethyl group, trichloromethyl group, tribromomethyl group and triiodomethyl group, and X represents fluoro group, chloro group, bromo group or iodo group, and     said organic acid halogenide is used with a catalyzer.     
     
     
       2. A method for forming a resist pattern, according to claim 1, wherein: said catalyzer is tertiary amine selected from the group consisting of trimethylamine, triethylamine, pyridine and a combination thereof.