Inventor
KANAZAWA KUNIHIKO
JP18 patents
⚠️ This page may combine multiple inventors who share the name “KANAZAWA KUNIHIKO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
9 patentsUS7125744B2Oct 24, 2006
High-frequency module and method for manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD175 citations99
US7081661B2Jul 25, 2006
High-frequency module and method for manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD182 citations99
US6818979B2Nov 16, 2004
High-frequency semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD26 citations92
US6815810B2Nov 9, 2004
High-frequency semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD17 citations92
US6794747B2Sep 21, 2004
Semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD28 citations92
US5371477ADec 6, 1994
Linear amplifier
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD24 citations92
US6787398B2Sep 7, 2004
Method of fabricating a high frequency signal amplification device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations73
US6509641B2Jan 21, 2003
High-frequency signal amplification device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations73
US7269156B2Sep 11, 2007
High-frequency circuit device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations62
MATSUSHITA ELECTRONICS CORP
8 patentsUS5796165AAug 18, 1998
High-frequency integrated circuit device having a multilayer structure
MATSUSHITA ELECTRONICS CORP145 citations96
US5717249AFeb 10, 1998
RF power amplifying circuit device
MATSUSHITA ELECTRONICS CORP75 citations95
US5546051AAug 13, 1996
Power amplifier and power amplification method
MATSUSHITA ELECTRONICS CORP28 citations92
US6268632B1Jul 31, 2001
Field effect transistor and power amplifier including the same
MATSUSHITA ELECTRONICS CORP21 citations91
US6114732ASep 5, 2000
Field effect transistor
MATSUSHITA ELECTRONICS CORP16 citations91
US6002301ADec 14, 1999
Transistor and power amplifier
MATSUSHITA ELECTRONICS CORP15 citations72
US4747909AMay 31, 1988
Method for manufacturing a perpendicular sidewalled metal layer on a substrate
MATSUSHITA ELECTRONICS CORP6 citations61
US4665416AMay 12, 1987
Semiconductor device having a protection breakdown diode on a semi-insulative substrate
MATSUSHITA ELECTRONICS CORP2 citations56