High-frequency signal amplification device

Abstract

The present invention provides a high-frequency signal amplification device, in which insufficient isolation is compensated and which is made smaller, as well as a method for manufacturing the same. A substrate, in which a plurality of metal conductors arranged between the plurality of dielectric layers and/or at a surface of the dielectric multilayer substrate are exposed at a first region of the surface, and a metal surface that is arranged at a position lower than the plurality of metal conductors is exposed from a remaining portion of the first region not including the region on which the plurality of metal conductors are arranged, is used as a dielectric multilayer substrate. The semiconductor element is mounted in the first region such that a high-frequency signal is input into the semiconductor element via at least one of the plurality of metal conductors, and an amplified high-frequency signal is output from the semiconductor element via at least another one of the plurality of metal conductors.

What is claimed is:  
     
       1. A high-frequency signal amplification device, comprising: 
       a dielectric multilayer substrate comprising a plurality of dielectric layers;  
       a semiconductor element with high-frequency signal amplification function mounted on the dielectric multilayer substrate;  
       a plurality of metal conductors, each conductor being arranged between the plurality of dielectric layers or at a surface of the dielectric multilayer substrate; and  
       a metal surface that is arranged at a position lower than the plurality of metal conductors;  
       wherein a surface of the dielectric multilayer substrate defines a cavity where a portion of the dielectric layers is removed;  
       wherein in the cavity, all surfaces of the dielectric layers that face outward from the cavity are all completely covered with the metal conductors or the metal surface;  
       wherein the semiconductor element is mounted at the cavity; and  
       wherein a high-frequency signal is input into the semiconductor element via at least one of the plurality of metal conductors, and an amplified high-frequency signal is output from the semiconductor element via at least another one of the plurality of metal conductors.  
     
     
       2. The high-frequency signal amplification device according to  claim 1 , wherein a spacing between the metal conductors into which the high-frequency signal is input or output is at least 10 μm and at most 300 μm. 
     
     
       3. The high-frequency signal amplification device according to  claim 1 , wherein the semiconductor element is bonded to the metal surface that is arranged at a position lower than the plurality of metal conductors, and the semiconductor element is connected electrically to the metal conductors by metal wires. 
     
     
       4. The high-frequency signal amplification device according to  claim 1 , wherein the semiconductor element is bonded face-down to the plurality of metal conductors. 
     
     
       5. The high-frequency signal amplification device according to  claim 1 , wherein the semiconductor element is mounted such that it does not protrude upward beyond the surface of the dielectric multilayer substrate. 
     
     
       6. The high-frequency signal amplification device according to  claim 1 , wherein a further metal conductor is disposed on a surface of one of the plurality of dielectric layers so as to form the metal surface that is arranged at a position lower than the plurality of metal conductors, the further metal conductor extending at least 50 μm beyond an edge of the cavity. 
     
     
       7. The high-frequency signal amplification device according to  claim 1 , wherein the semiconductor element is sealed by a resin. 
     
     
       8. The high-frequency signal amplification device according to  claim 1 , wherein in the cavity dielectric material that comprises the dielectric layers is removed except for a region supporting the metal conductors. 
     
     
       9. A high-frequency signal amplification device, comprising: 
       a dielectric multilayer substrate comprising a plurality of dielectric layers;  
       a semiconductor element with high-frequency signal amplification function mounted on the dielectric multilayer substrate;  
       a plurality of metal conductors each conductor being arranged between the plurality of dielectric layers and/or at a surface of the dielectric multilayer substrate; and  
       a metal surface that is arranged at a position lower than the plurality of metal conductors;  
       wherein the metal conductors are exposed at a portion of a first region of the surface of the dielectric multilayer substrate, and the metal surface is exposed from a remaining portion of the first region not including the region on which the plurality of metal conductors are arranged;  
       wherein the semiconductor element is mounted to the metal conductor or the metal surfacee the first region; and  
       wherein a high-frequency signal is input into the semiconductor element via at least one of the plurality of metal conductors, and an amplified high-frequency signal is output from the semiconductor element via at least another one of the plurality of metal conductors; and  
       wherein a spacing between the metal conductors into which the high-frequency signal is input or output is at least 10 μm and at most 300 μm.