Inventor
TREU MICHAEL
AT33 patents
⚠️ This page may combine multiple inventors who share the name “TREU MICHAEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AUSTRIA AG
9 patentsUS10347490B2Jul 9, 2019
Production of an integrated circuit including electrical contact on SiC
INFINEON TECHNOLOGIES AUSTRIA AG1 citations73
US10923432B2Feb 16, 2021
Method of manufacturing a semiconductor device with epitaxial layers and an alignment mark
INFINEON TECHNOLOGIES AUSTRIA AG1 citations72
US11923276B2Mar 5, 2024
Semiconductor device including a bidirectional switch
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US11605577B2Mar 14, 2023
Semiconductor device including a bidirectional switch
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US11329126B2May 10, 2022
Method of manufacturing a superjunction semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG1 citations62
US11217510B2Jan 4, 2022
Semiconductor device including a bidirectional switch
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US10600740B2Mar 24, 2020
Method of manufacturing a semiconductor device with epitaxial layers and an alignment mark
INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US10236258B2Mar 19, 2019
Method of manufacturing a semiconductor device with epitaxial layers and an alignment mark
INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US9431392B2Aug 30, 2016
Electronic circuit having adjustable transistor device
INFINEON TECHNOLOGIES AUSTRIA AG1 citations50
INFINEON TECHNOLOGIES AUSTRIA
6 patentsUS7772621B2Aug 10, 2010
Semiconductor device with structured current spread region and method
INFINEON TECHNOLOGIES AUSTRIA7 citations74
US7763506B2Jul 27, 2010
Method for making an integrated circuit including vertical junction field effect transistors
INFINEON TECHNOLOGIES AUSTRIA7 citations73
US7910983B2Mar 22, 2011
MOS transistor having an increased gate-drain capacitance
INFINEON TECHNOLOGIES AUSTRIA3 citations63
US7745273B2Jun 29, 2010
Semiconductor device and method for forming same
INFINEON TECHNOLOGIES AUSTRIA5 citations63
US9263443B2Feb 16, 2016
Semiconductor device including a normally-off transistor and transistor cells of a normally-on GaN HEMT
INFINEON TECHNOLOGIES AUSTRIA0 citations52
US8895422B2Nov 25, 2014
Production of an integrated circuit including electrical contact on SiC
INFINEON TECHNOLOGIES AUSTRIA0 citations52
INFINEON TECHNOLOGIES AG
4 patentsUS6905916B2Jun 14, 2005
Method for processing a surface of an SiC semiconductor layer and Schottky contact
INFINEON TECHNOLOGIES AG31 citations92
US7538362B2May 26, 2009
Lateral semiconductor diode and method for fabricating it
INFINEON TECHNOLOGIES AG3 citations54
US9634108B2Apr 25, 2017
Method of manufacturing a device by locally heating one or more metalization layers and by means of selective etching
INFINEON TECHNOLOGIES AG0 citations51
US9391154B2Jul 12, 2016
Method of manufacturing a device by locally heating one or more metalization layers and by means of selective etching
INFINEON TECHNOLOGIES AG0 citations51
TREU MICHAEL
3 patentsUS8530904B2Sep 10, 2013
Semiconductor device including a normally-on transistor and a normally-off transistor
TREU MICHAEL22 citations92
US8525254B2Sep 3, 2013
Silicone carbide trench semiconductor device
TREU MICHAEL21 citations92
US8188482B2May 29, 2012
SiC semiconductor device with self-aligned contacts, integrated circuit and manufacturing method
TREU MICHAEL3 citations56