Inventor
ARTHUR STEPHEN DALEY
US45 patents
⚠️ This page may combine multiple inventors who share the name “ARTHUR STEPHEN DALEY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GEN ELECTRIC
28 patentsUS7078731B2Jul 18, 2006
Gallium nitride crystals and wafers and method of making
GEN ELECTRIC270 citations98
US7829402B2Nov 9, 2010
MOSFET devices and methods of making
GEN ELECTRIC129 citations97
US8049338B2Nov 1, 2011
Power semiconductor module and fabrication method
GEN ELECTRIC14 citations84
US7781312B2Aug 24, 2010
Silicon carbide devices and method of making
GEN ELECTRIC12 citations83
US7663456B2Feb 16, 2010
Micro-electromechanical system (MEMS) switch arrays
GEN ELECTRIC15 citations83
US7595241B2Sep 29, 2009
Method for fabricating silicon carbide vertical MOSFET devices
GEN ELECTRIC9 citations83
US8507986B2Aug 13, 2013
Silicon-carbide MOSFET cell structure and method for forming same
GEN ELECTRIC7 citations81
US8377756B1Feb 19, 2013
Silicon-carbide MOSFET cell structure and method for forming same
GEN ELECTRIC9 citations80
US11233157B2Jan 25, 2022
Systems and methods for unipolar charge balanced semiconductor power devices
GEN ELECTRIC2 citations73
US9406762B2Aug 2, 2016
Semiconductor device with junction termination extension
GEN ELECTRIC4 citations72
US11056586B2Jul 6, 2021
Techniques for fabricating charge balanced (CB) trench-metal-oxide-semiconductor field-effect transistor (MOSFET) devices
GEN ELECTRIC3 citations69
US7760005B2Jul 20, 2010
Power electronic module including desaturation detection diode
GEN ELECTRIC4 citations63
US12191384B2Jan 7, 2025
Techniques for fabricating charge balanced (CB) trench-metal-oxide-semiconductor field-effect transistor (MOSFET) devices
GEN ELECTRIC0 citations62
US10957759B2Mar 23, 2021
Systems and methods for termination in silicon carbide charge balance power devices
GEN ELECTRIC0 citations62
US8987858B2Mar 24, 2015
Method and system for transient voltage suppression
GEN ELECTRIC2 citations62
US8765524B2Jul 1, 2014
Method and system for transient voltage suppressors
GEN ELECTRIC2 citations62
US11764257B2Sep 19, 2023
Systems and methods for junction termination of wide band gap super-junction power devices
GEN ELECTRIC0 citations61
US11271076B2Mar 8, 2022
Systems and methods for junction termination in semiconductor devices
GEN ELECTRIC0 citations61
US11245003B2Feb 8, 2022
Systems and methods for junction termination of wide band gap super-junction power devices
GEN ELECTRIC0 citations61
US9123798B2Sep 1, 2015
Insulating gate field effect transistor device and method for providing the same
GEN ELECTRIC2 citations61
US11538769B2Dec 27, 2022
High voltage semiconductor devices having improved electric field suppression
GEN ELECTRIC1 citations59
US11417759B2Aug 16, 2022
Semiconductor device and method for reduced bias threshold instability
GEN ELECTRIC0 citations59
US10892237B2Jan 12, 2021
Methods of fabricating high voltage semiconductor devices having improved electric field suppression
GEN ELECTRIC1 citations59
US11069772B2Jul 20, 2021
Techniques for fabricating planar charge balanced (CB) metal-oxide-semiconductor field-effect transistor (MOSFET) devices
GEN ELECTRIC0 citations52
US9735263B2Aug 15, 2017
Transistor and switching system comprising silicon carbide and oxides of varying thicknesses, and method for providing the same
GEN ELECTRIC0 citations52
US8377812B2Feb 19, 2013
SiC MOSFETs and self-aligned fabrication methods thereof
GEN ELECTRIC1 citations48
US10903330B2Jan 26, 2021
Tapered gate electrode for semiconductor devices
GEN ELECTRIC0 citations45
US9379189B2Jun 28, 2016
Method and system for transient voltage suppression
GEN ELECTRIC0 citations39
MOMENTIVE PERFORMANCE MAT INC
4 patentsUS7859008B2Dec 28, 2010
Crystalline composition, wafer, device, and associated method
MOMENTIVE PERFORMANCE MAT INC9 citations84
US7786503B2Aug 31, 2010
Gallium nitride crystals and wafers and method of making
MOMENTIVE PERFORMANCE MAT INC13 citations84
US7527742B2May 5, 2009
Etchant, method of etching, laminate formed thereby, and device
MOMENTIVE PERFORMANCE MAT INC15 citations83
US7638815B2Dec 29, 2009
Crystalline composition, wafer, and semi-conductor structure
MOMENTIVE PERFORMANCE MAT INC5 citations62