Power electronic module including desaturation detection diode

Abstract

A power electronic module includes: a switch module including a desaturation detection diode and a power semiconductor switch, and wherein the desaturation detection diode is coupled to a switching connection of the power semiconductor switch; and a driver module coupled to the switch module, wherein the driver module is configured for obtaining a voltage signal across the desaturation detection diode and the power semiconductor switch and configured for turning off the power semiconductor switch upon the voltage signal exceeding a threshold. In one example, the driver module is discrete from the switch module. In another example, the switch module and driver modules are configured to respectively provide and receive a voltage signal of less than or equal to seventy volts.

1. A power electronic module comprising:
 a switch module comprising a desaturation detection diode and a power semiconductor switch, and wherein the desaturation detection diode is coupled to a switching connection of the power semiconductor switch; 
 a driver module coupled to the switch module, wherein the driver module is discrete from the switch module, wherein the driver module is configured for obtaining a voltage signal across the desaturation detection diode and the power semiconductor switch and configured for turning off the power semiconductor switch upon the voltage signal exceeding a threshold; and 
 a clamp coupled across the desaturation detection diode and the power semiconductor switch. 
 
   
   
     2. The power electronic module of  claim 1  wherein the desaturation detection diode and the power semiconductor switch share a common blocking junction. 
   
   
     3. The power electronic module of  claim 2  wherein the desaturation detection diode and the power semiconductor switch are situated on a common substrate and further comprising a cable coupling the driver and switch modules, wherein, during operation, the cable carries a lower voltage than the voltage passing through the power semiconductor switch. 
   
   
     4. The power electronic module of  claim 1  wherein the power semiconductor switch comprises a controllable switch. 
   
   
     5. The power electronic module of  claim 4  wherein the controllable switch comprises an insulated gate bipolar transistor (IGBT), and wherein the desaturation detection diode is coupled to a collector of the IGBT. 
   
   
     6. The power electronic module of  claim 4  wherein the controllable switch comprises a metal oxide semiconducting field effect transistor (MOSFET) and wherein the desaturation detection diode is coupled to a drain of the MOSFET. 
   
   
     7. The power electronic module of  claim 4  wherein the controllable switch comprises a switching device selected from the group consisting of bipolar junction transistors, junction field effect transistors, and gate turn off thyristors. 
   
   
     8. The power electronic module of  claim 4  wherein the controllable switch comprises a plurality of coupled switching devices. 
   
   
     9. The power electronic module of  9   claim 1  wherein the integrated package comprises the clamp. 
   
   
     10. The power electronic module of  claim 1  wherein the clamp comprises a Zener diode, a transorb voltage suppressor, or a transient voltage suppressor. 
   
   
     11. The power electronic module of  claim 1  wherein the clamp comprises a Zener diode, and wherein the Zener diode comprises a material selected from the group consisting of silicon carbide and silicon. 
   
   
     12. The power electronic module of  claim 11  wherein the clamp further comprises a damping resistor coupled between the Zener diode and the desaturation detection diode. 
   
   
     13. The power electronic module of  claim 12  wherein the clamp further comprises a reverse current blocking diode coupled between the Zener diode and the power semiconductor switch. 
   
   
     14. The power electronic module of  claim 13  wherein the reverse current blocking diode comprises an additional Zener diode. 
   
   
     15. The power electronic module of  claim 1  wherein the desaturation detection diode and the power semiconductor switch are situated on a common wafer level substrate. 
   
   
     16. A power electronic module comprising:
 a switch module comprising a desaturation detection diode and a power semiconductor switch, wherein the desaturation detection diode is coupled to a switching connection of the power semiconductor switch, and wherein the desaturation detection diode and the power semiconductor switch are situated on a common wafer level substrate; 
 a driver module coupled to the switch module, wherein the driver module is discrete from the switch module, wherein the driver module is configured for obtaining a voltage signal across the desaturation detection diode and the power semiconductor switch and configured for turning off the power semiconductor switch upon the voltage signal exceeding a threshold; and 
 further comprising isolated diode and switch regions each comprising a common polarity. 
 
   
   
     17. The power electronic module of  claim 16  further comprising a field stop region of power semiconductor switch wherein the field stop region also comprises a cathode of desaturation detection diode. 
   
   
     18. The power electronic module of  claim 15  wherein the desaturation detection diode and the power semiconductor switch share a common blocking junction. 
   
   
     19. The power electronic module of  claim 1  wherein desaturation detection diode and power semiconductor switch have matched characteristics. 
   
   
     20. The power electronic module of  claim 1  wherein the power semiconductor switch includes a gate, wherein the clamp comprises a Zener diode and a damping resistor coupled between the Zener diode and the desaturation detection diode, and wherein the power electronic module further comprises:
 a protection switch coupled to the gate of the power semiconductor switch; and 
 an impedance coupled between, on one end, the damping resistor and the desaturation detection diode and, on the other end, a control terminal of the protection switch. 
 
   
   
     21. The power electronic module of  claim 1  wherein the desaturation detection diode comprises a material selected from the group comprising silicon, silicon carbide, and combinations thereof. 
   
   
     22. The power electronic module of  claim 1  wherein the power semiconductor switch comprises a material selected from the group comprising silicon, silicon carbide, and combinations thereof. 
   
   
     23. A power electronic module comprising:
 a switch module comprising an integrated package, wherein the integrated package comprises a desaturation detection diode, a controllable power semiconductor switch, and a clamp coupled across the desaturation detection diode and the power semiconductor switch, and wherein the desaturation detection diode is coupled to a switching connection of the controllable power semiconductor switch; 
 a driver module coupled to the switch module, wherein the driver module is configured for obtaining a voltage signal across the desaturation detection diode and the power semiconductor switch and for turning off the controllable power semiconductor switch upon the voltage signal exceeding a threshold, wherein the switch module and driver modules are configured to respectively provide and receive a voltage signal of less than or equal to seventy volts. 
 
   
   
     24. The power electronic module of  claim 23  wherein the controllable switch comprises an insulated gate bipolar transistor, a metal oxide semiconducting field effect transistor, a bipolar junction transistor, a junction field effect transistor, or a gate turn off thyristor and wherein the desaturation detection diode and the controllable power semiconductor switch share a common blocking junction. 
   
   
     25. The power electronic module of  claim 23  wherein the clamp comprises a Zener diode. 
   
   
     26. The power electronic module of  claim 25  wherein the clamp further comprises a damping resistor coupled between the Zener diode and the desaturation detection diode. 
   
   
     27. The power electronic module of  claim 26  wherein the clamp further comprises a reverse current blocking diode coupled between the Zener diode and the power semiconductor switch. 
   
   
     28. The power electronic module of  claim 27  wherein the desaturation detection diode, the reverse current blocking diode, and the controllable power semiconductor switch each comprise, independently, a material selected from the group consisting of silicon carbide and silicon. 
   
   
     29. The power electronic module of  claim 27  wherein the desaturation detection diode, the reverse current blocking diode, and the controllable power semiconductor switch each comprise silicon carbide.