Inventor · disambiguated record
Stephen Daley Arthur
Also filed as: ARTHUR STEPHEN · ARTHUR STEPHEN D · ARTHUR STEPHEN DALEY
55 granted patents·16 pending applications·1,166 citations·filing 1988–2022
98Inventor score
Top patents by PatentIndex Score
71 records- 0198US7829402B2MOSFET devices and methods of makingGEN ELECTRIC·Filed 2009·Granted Nov 9, 2010·129 cites·33 claims
- 0298US7078731B2Gallium nitride crystals and wafers and method of makingGEN ELECTRIC·Filed 2004·Granted Jul 18, 2006·270 cites·40 claims
- 0397US7175704B2Method for reducing defect concentrations in crystalsDIAMOND INNOVATIONS INC·Filed 2003·Granted Feb 13, 2007·102 cites·20 claims
- 0496US8278711B2Semiconductor device and method of making the sameRAO RAMAKRISHNA·Filed 2010·Granted Oct 2, 2012·48 cites·20 claims
- 0594US7786503B2Gallium nitride crystals and wafers and method of makingMOMENTIVE PERFORMANCE MAT INC·Filed 2006·Granted Aug 31, 2010·13 cites·35 claims
- 0694US7179670B2Flip-chip light emitting diode device without sub-mountGELCORE LLC·Filed 2004·Granted Feb 20, 2007·84 cites·32 claims
- 0792US4927772AMethod of making high breakdown voltage semiconductor deviceGEN ELECTRIC·Filed 1989·Granted May 22, 1990·136 cites·13 claims
- 0890US8530902B2System for transient voltage suppressorsKASHYAP AVINASH SRIKRISHNAN·Filed 2011·Granted Sep 10, 2013·13 cites·23 claims
- 0990US7527742B2Etchant, method of etching, laminate formed thereby, and deviceMOMENTIVE PERFORMANCE MAT INC·Filed 2005·Granted May 5, 2009·15 cites·36 claims
- 1088US8049338B2Power semiconductor module and fabrication methodGEN ELECTRIC·Filed 2006·Granted Nov 1, 2011·14 cites·22 claims
- 1187US8377756B1Silicon-carbide MOSFET cell structure and method for forming sameGEN ELECTRIC·Filed 2011·Granted Feb 19, 2013·9 cites·11 claims
- 1287US7781312B2Silicon carbide devices and method of makingGEN ELECTRIC·Filed 2006·Granted Aug 24, 2010·12 cites·15 claims
- 1386US7663456B2Micro-electromechanical system (MEMS) switch arraysGEN ELECTRIC·Filed 2005·Granted Feb 16, 2010·15 cites·15 claims
- 1486US6838741B2Avalanche photodiode for use in harsh environmentsGEN ELECTTRIC COMPANY·Filed 2002·Granted Jan 4, 2005·45 cites·38 claims
- 1585US8466007B2Power semiconductor module and fabrication methodDELGADO ELADIO CLEMENTE·Filed 2011·Granted Jun 18, 2013·7 cites·4 claims
- 1685US4939101AMethod of making direct bonded wafers having a void free interfaceGEN ELECTRIC·Filed 1988·Granted Jul 3, 1990·67 cites·23 claims
- 1784US8507986B2Silicon-carbide MOSFET cell structure and method for forming sameGEN ELECTRIC·Filed 2013·Granted Aug 13, 2013·7 cites·9 claims
- 1883US7595241B2Method for fabricating silicon carbide vertical MOSFET devicesGEN ELECTRIC·Filed 2006·Granted Sep 29, 2009·9 cites·19 claims
- 1982US11056586B2Techniques for fabricating charge balanced (CB) trench-metal-oxide-semiconductor field-effect transistor (MOSFET) devicesGEN ELECTRIC·Filed 2018·Granted Jul 6, 2021·3 cites·21 claims
- 2082US9406762B2Semiconductor device with junction termination extensionGEN ELECTRIC·Filed 2013·Granted Aug 2, 2016·4 cites·12 claims
- 2178US11233157B2Systems and methods for unipolar charge balanced semiconductor power devicesGEN ELECTRIC·Filed 2018·Granted Jan 25, 2022·2 cites·22 claims
- 2278US7859008B2Crystalline composition, wafer, device, and associated methodMOMENTIVE PERFORMANCE MAT INC·Filed 2007·Granted Dec 28, 2010·9 cites·37 claims
- 2377US5424563AApparatus and method for increasing breakdown voltage ruggedness in semiconductor devicesHARRIS CORP·Filed 1993·Granted Jun 13, 1995·39 cites·35 claims
- 2476US11764257B2Systems and methods for junction termination of wide band gap super-junction power devicesGEN ELECTRIC·Filed 2022·Granted Sep 19, 2023·0 cites·20 claims
- 2574US9257283B2Device having reduced bias temperature instability (BTI)MICHAEL JOSEPH DARRYL·Filed 2012·Granted Feb 9, 2016·5 cites·2 claims
- 2674US7002156B2Detection system including avalanche photodiode for use in harsh environmentsGEN ELECTRIC·Filed 2004·Granted Feb 21, 2006·16 cites·27 claims
- 2773US7638815B2Crystalline composition, wafer, and semi-conductor structureMOMENTIVE PERFORMANCE MAT INC·Filed 2007·Granted Dec 29, 2009·5 cites·31 claims
- 2872US8987858B2Method and system for transient voltage suppressionGEN ELECTRIC·Filed 2013·Granted Mar 24, 2015·2 cites·15 claims
- 2970US8765524B2Method and system for transient voltage suppressorsGEN ELECTRIC·Filed 2013·Granted Jul 1, 2014·2 cites·7 claims
- 3068US10892237B2Methods of fabricating high voltage semiconductor devices having improved electric field suppressionGEN ELECTRIC·Filed 2018·Granted Jan 12, 2021·1 cites·13 claims
- 3167US9123798B2Insulating gate field effect transistor device and method for providing the sameGEN ELECTRIC·Filed 2012·Granted Sep 1, 2015·2 cites·23 claims
- 3266US11538769B2High voltage semiconductor devices having improved electric field suppressionGEN ELECTRIC·Filed 2018·Granted Dec 27, 2022·1 cites·18 claims
- 3366US9576868B2Semiconductor device and method for reduced bias temperature instability (BTI) in silicon carbide devicesMICHAEL JOSEPH DARRYL·Filed 2012·Granted Feb 21, 2017·2 cites·22 claims
- 3466US5654226AWafer bonding for power devicesHARRIS CORP·Filed 1994·Granted Aug 5, 1997·33 cites·16 claims
- 3565US11271076B2Systems and methods for junction termination in semiconductor devicesGEN ELECTRIC·Filed 2019·Granted Mar 8, 2022·0 cites·20 claims
- 3665US11245003B2Systems and methods for junction termination of wide band gap super-junction power devicesGEN ELECTRIC·Filed 2019·Granted Feb 8, 2022·0 cites·21 claims
- 3764US12191384B2Techniques for fabricating charge balanced (CB) trench-metal-oxide-semiconductor field-effect transistor (MOSFET) devicesGEN ELECTRIC·Filed 2021·Granted Jan 7, 2025·0 cites·20 claims
- 3864US10957759B2Systems and methods for termination in silicon carbide charge balance power devicesGEN ELECTRIC·Filed 2018·Granted Mar 23, 2021·0 cites·16 claims
- 3964US7760005B2Power electronic module including desaturation detection diodeGEN ELECTRIC·Filed 2007·Granted Jul 20, 2010·4 cites·29 claims
- 4063US8377812B2SiC MOSFETs and self-aligned fabrication methods thereofGEN ELECTRIC·Filed 2009·Granted Feb 19, 2013·1 cites·22 claims
- 4158US9006027B2Systems and methods for terminating junctions in wide bandgap semiconductor devicesSTUM ZACHARY MATTHEW·Filed 2012·Granted Apr 14, 2015·1 cites·30 claims
- 4256US11417759B2Semiconductor device and method for reduced bias threshold instabilityGEN ELECTRIC·Filed 2019·Granted Aug 16, 2022·0 cites·18 claims
- 4354US2014361315A1Semiconductor device and method of manufacturing the sameGEN ELECTRIC·Filed 2014·Application pending·0 cites
- 4451US8216370B2Method for reducing defect concentration in crystalsD EVELYN MARK PHILIP·Filed 2005·Granted Jul 10, 2012·0 cites·17 claims
- 4551US4814283ASimple automated discretionary bonding of multiple parallel elementsGEN ELECTRIC·Filed 1988·Granted Mar 21, 1989·18 cites·11 claims
- 4651US2009267141A1Method for fabricating silicon carbide vertical mosfet devicesGEN ELECTRIC·Filed 2009·Application pending·0 cites
- 4750US2007000330A1Pressure sensorGEN ELECTRIC·Filed 2006·Application pending·0 cites
- 4849US9735263B2Transistor and switching system comprising silicon carbide and oxides of varying thicknesses, and method for providing the sameGEN ELECTRIC·Filed 2013·Granted Aug 15, 2017·0 cites·18 claims
- 4949US5041896ASymmetrical blocking high voltage semiconductor device and method of fabricationGEN ELECTRIC·Filed 1989·Granted Aug 20, 1991·12 cites·19 claims
- 5049US2013146898A1SiC MOSFETS AND SELF-ALIGNED FABRICATION METHODS THEREOFGEN ELECTRIC·Filed 2013·Application pending·0 cites
Showing the top 50 of 71 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →