Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device according to one embodiment having a first region comprising a first dopant type, a second region adjacent the first region haivng a second dopant type and a channel region. There is a third region segregated from the channel region having a second dopant type, wherein the third region substantially coincides with the second region.

What is claimed as new and desired to be protected by Letters Patent of the United States is: 
     
         1 . A semiconductor device comprising:
 an epitaxial silicon carbide n− drift layer, the n− drift layer comprising:
 a n+ region having an n-type dopant type; 
 a p well region adjacent the n+ region having a p-type dopant type and having a channel region; and 
 a second p-well region segregated from the channel region within the n− drift layer including a p-type dopant type, wherein the second p well region substantially coincides with the p-well region. 
   
     
     
         2 . The semiconductor device of  claim 1  wherein the second p-well region is a multiple implant region. 
     
     
         3 . The semiconductor device of  claim 1 , wherein the p-dopant type within the p-well region and the p-type dopant type within the second p-well region result in a charge density of about 1.3×1013 cm-2. 
     
     
         4 . The semiconductor device of  claim 1 , wherein the n− drift layer further comprises a p+ region. 
     
     
         5 . A semiconductor device, comprising:
 a first region comprising a first dopant type;   a second region adjacent the first region comprising a second dopant type and a channel region; and   a third region segregated from the channel region comprising the second dopant type, wherein the third region substantially coincides with the second region.   
     
     
         6 . The semiconductor device of  claim 5 , wherein the third region has a dopant type concentration in a range between 0.01 times to 100 times the dopant type concentration of the second region. 
     
     
         7 . The semiconductor device of  claim 5 , wherein the third region has a dopant type concentration in a range between 0.01 times to 10 times the dopant type concentration of the second region. 
     
     
         8 . The semiconductor device of  claim 5 , wherein the third region has a dopant type concentration in a range between 0.01 times to 5 times the dopant type concentration of the second region. 
     
     
         9 . The semiconductor device of  claim 5 , wherein the first dopant type is is a p-type dopant type.