Inventor

SUK SUNG-DAE

KR60 patents

⚠️ This page may combine multiple inventors who share the name “SUK SUNG-DAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SUK SUNG-DAE

SAMSUNG ELECTRONICS CO LTD

Semiconductor device having a gate all around structure

Method of fabricating semiconductor device

Semiconductor device having a fin

Method of fabricating a MOS field effect transistor having plurality of channels

Semiconductor devices including stress inducing layers

Semiconductor devices and methods of fabricating the same

Gate-all-around type semiconductor device and method of manufacturing the same

Semiconductor device

Semiconductor device including gate electrode extending between nanosheets

Semiconductor device fabrication methods

Complementary metal-oxide semiconductor (CMOS) devices including a thin-body channel and dual gate dielectric layers and methods of manufacturing the same

Semiconductor devices

Semiconductor devices and methods of manufacturing the same

Methods of manufacturing FINFET semiconductor devices using sacrificial gate patterns and selective oxidization of a fin

Semiconductor device including isolation layers and method of manufacturing the same

Semiconductor device having a gate all around structure and a method for fabricating the same

Semiconductor device

Semiconductor devices including channel and junction regions of different semiconductor materials

MOS field effect transistor having plurality of channels

Semiconductor device

Semiconductor device and method for fabricating the same

Semiconductor device

Semiconductor device

Semiconductor device having a fin

Semiconductor device and method for fabricating the same

Method of fabricating semiconductor device

Semiconductor device including isolation layers and method of manufacturing the same

Single electron transistor and method of manufacturing the same

Semiconductor devices including fin shaped semiconductor regions and stress inducing layers

Semiconductor device

Semiconductor device

FinFET semiconductor device and method of manufacturing the same

Semiconductor device

Semiconductor device

Semiconductor device including isolation layers and method of manufacturing the same

Semiconductor device

IBM

Stacked gate structures

Self-aligned bottom spacer EPI last flow for VTFET

Strain generation and anchoring in gate-all-around field effect transistors

Three-dimensional, monolithically stacked field effect transistors formed on the front and backside of a wafer

Self-aligned bottom spacer epi last flow for VTFET

Three-dimensional, monolithically stacked field effect transistors formed on the front and backside of a wafer

Gate-all-around devices with isolated and non-isolated epitaxy regions for strain engineering

Upper and lower gate configurations of monolithic stacked FinFET transistors

Confined gate recessing for vertical transport field effect transistors

SUK SUNG-DAE

Gate-all-around type semiconductor device and method of manufacturing the same

Single electron transistor

Semiconductor device and fabricating method thereof

Integrated junction and junctionless nanotransistors

OH CHANG-WOO

Semiconductor devices including fin shaped semiconductor regions and stress inducing layers