Inventor
LIM DONG-CHAN
KR43 patents
⚠️ This page may combine multiple inventors who share the name “LIM DONG-CHAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
30 patentsUS10950578B2Mar 16, 2021
Semiconductor device, semiconductor package and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD13 citations84
US10325869B2Jun 18, 2019
Semiconductor devices, semiconductor packages, and methods of manufacturing the semiconductor devices
SAMSUNG ELECTRONICS CO LTD6 citations84
US7696552B2Apr 13, 2010
Semiconductor devices including high-k dielectric materials
SAMSUNG ELECTRONICS CO LTD12 citations84
US11289402B2Mar 29, 2022
Semiconductor device including TSV and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD8 citations83
US7534709B2May 19, 2009
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD12 citations82
US7371669B2May 13, 2008
Method of forming a gate of a semiconductor device
SAMSUNG ELECTRONICS CO LTD7 citations74
US8860221B2Oct 14, 2014
Electrode connecting structures containing copper
SAMSUNG ELECTRONICS CO LTD5 citations73
US11004814B2May 11, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations72
US7875939B2Jan 25, 2011
Semiconductor device including an ohmic layer
SAMSUNG ELECTRONICS CO LTD2 citations63
US7582924B2Sep 1, 2009
Semiconductor devices having polymetal gate electrodes
SAMSUNG ELECTRONICS CO LTD6 citations63
US7544597B2Jun 9, 2009
Method of forming a semiconductor device including an ohmic layer
SAMSUNG ELECTRONICS CO LTD3 citations63
US11791137B2Oct 17, 2023
Apparatus for etching substrate bevel and semiconductor fabrication method using the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US11728297B2Aug 15, 2023
Semiconductor devices, semiconductor packages, and methods of manufacturing the semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US11018101B2May 25, 2021
Semiconductor devices, semiconductor packages, and methods of manufacturing the semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US8691692B2Apr 8, 2014
Semiconductor chips and methods of forming the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US12424572B2Sep 23, 2025
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11804472B2Oct 31, 2023
Semiconductor device, semiconductor package and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11600552B2Mar 7, 2023
Semiconductor device having a through silicon via and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11581279B2Feb 14, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11488860B2Nov 1, 2022
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11069597B2Jul 20, 2021
Semiconductor chips and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations61
US11043445B2Jun 22, 2021
Semiconductor device having a through silicon via and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations61
US10763163B2Sep 1, 2020
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations61
US11929366B2Mar 12, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations59
US11705386B2Jul 18, 2023
Semiconductor device including TSV and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations59
US11374001B2Jun 28, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations59
US7867841B2Jan 11, 2011
Methods of forming semiconductor devices with extended active regions
SAMSUNG ELECTRONICS CO LTD4 citations58
US12224163B2Feb 11, 2025
Ion beam source, substrate process apparatus including the same, and method of processing a substrate using the same
SAMSUNG ELECTRONICS CO LTD0 citations55
US9831164B2Nov 28, 2017
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US7518214B2Apr 14, 2009
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
PARK BYUNG-LYUL
4 patentsUS8076234B1Dec 13, 2011
Semiconductor device and method of fabricating the same including a conductive structure is formed through at least one dielectric layer after forming a via structure
PARK BYUNG-LYUL40 citations92
US9018768B2Apr 28, 2015
Integrated circuit having through silicon via structure with minimized deterioration
PARK BYUNG-LYUL10 citations83
US8592310B2Nov 26, 2013
Methods of manufacturing a semiconductor device
PARK BYUNG-LYUL18 citations83
US8847399B2Sep 30, 2014
Semiconductor device and method of fabricating the same
PARK BYUNG-LYUL2 citations62
MOON KWANG-JIN
3 patentsUS8390120B2Mar 5, 2013
Semiconductor device and method of fabricating the same
MOON KWANG-JIN29 citations91
US9530726B2Dec 27, 2016
Semiconductor device and method of fabricating the same
MOON KWANG-JIN2 citations61
US8497157B2Jul 30, 2013
Method of manufacturing a semiconductor device and method of manufacturing a semiconductor package including the same
MOON KWANG-JIN1 citations51