Ion beam source, substrate process apparatus including the same, and method of processing a substrate using the same

Abstract

An ion beam source including a plasma chamber including a plasma generating space, a plasma generator configured to generate plasma in the plasma generating space, a first grid connected to the plasma chamber, a second grid connected to the plasma chamber, and a first grid driver connected to the first grid. The first grid driver may be configured to move the first grid relative to the second grid.

What is claimed is: 
     
       1. An ion beam source, comprising:
 a plasma chamber comprising a plasma generating space; 
 a plasma generator configured to generate plasma in the plasma generating space; 
 a first grid connected to the plasma chamber; 
 a second grid connected to the plasma chamber; and 
 a first grid driver connected to the first grid, 
 wherein the first grid driver is configured to move the first grid relative to the second grid. 
 
     
     
       2. The ion beam source of  claim 1 , wherein each of the first grid and the second grid has a plate shape extending perpendicular to a first direction, and
 wherein the first grid and the second grid are spaced apart from each other in the first direction. 
 
     
     
       3. The ion beam source of  claim 2 , wherein the first grid driver is configured to move the first grid in a second direction crossing the first direction. 
     
     
       4. The ion beam source of  claim 2 , wherein the first grid driver is configured to rotate the first grid about an axis parallel to the first direction. 
     
     
       5. The ion beam source of  claim 2 , wherein the first grid driver is configured to move the first grid in the first direction. 
     
     
       6. The ion beam source of  claim 1 , further comprising a third grid connected to the plasma chamber. 
     
     
       7. The ion beam source of  claim 6 , further comprising a second grid driver connected to the second grid,
 wherein the second grid driver is configured to move the second grid relative to the third grid. 
 
     
     
       8. The ion beam source of  claim 1 , wherein each of the first grid and the second grid comprises at least one of stainless steel (SUS), carbon graphite, copper (Cu), or aluminum (Al). 
     
     
       9. A substrate process apparatus, comprising:
 an ion beam source; and 
 a substrate holder spaced apart from the ion beam source, 
 wherein the ion beam source comprises:
 a plasma chamber comprising a plasma generating space; 
 a plasma generator configured to generate plasma in the plasma generating space; 
 a plurality of grids connected to the plasma chamber; and 
 a grid driver configured to move one of the plurality of grids relative to the other ones of the plurality of grids. 
 
 
     
     
       10. The substrate process apparatus of  claim 9 , wherein each of the plurality of grids comprises:
 a grid supporting member having a ring shape; and 
 a plurality of blocking bars coupled to the grid supporting member, 
 wherein a plurality of grid penetration holes are provided between the plurality of blocking bars. 
 
     
     
       11. The substrate process apparatus of  claim 10 , wherein the plurality of grid penetration holes have a rectangular shape, when viewed in a plan view. 
     
     
       12. The substrate process apparatus of  claim 9 , wherein the plasma generator comprises an RF coil that surrounds the plasma chamber. 
     
     
       13. The substrate process apparatus of  claim 9 , wherein the plurality of grids comprises at least three grids. 
     
     
       14. The substrate process apparatus of  claim 9 , further comprising a target portion spaced apart from the ion beam source and the substrate holder,
 wherein the target portion comprises:
 a target plate; and 
 a target holder supporting the target plate. 
 
 
     
     
       15. A substrate processing method, comprising:
 placing a substrate in a substrate process apparatus; and 
 emitting an ion beam from an ion beam source spaced apart from the substrate, 
 wherein the ion beam source comprises:
 a plasma chamber providing a plasma generating space; 
 a plasma generator configured to generate plasma in the plasma generating space; 
 a first grid connected to the plasma chamber; 
 a second grid connected to the plasma chamber; and 
 a first grid driver connected to the first grid, 
 
 wherein the first grid driver is configured to move the first grid relative to the second grid. 
 
     
     
       16. The substrate processing method of  claim 15 , further comprising moving the first grid relative to the second grid using the first grid driver. 
     
     
       17. The substrate processing method of  claim 16 , wherein the moving of the first grid relative to the second grid comprises rotating the first grid relative to the second grid. 
     
     
       18. The substrate processing method of  claim 16 , wherein the moving of the first grid relative to the second grid comprises horizontally moving the first grid relative to the second grid. 
     
     
       19. The substrate processing method of  claim 16 , wherein the moving of the first grid relative to the second grid comprises moving the first grid toward the second grid to change a distance between the first grid and the second grid. 
     
     
       20. The substrate processing method of  claim 15 , wherein the emitting of the ion beam from the ion beam source comprises processing the substrate using the ion beam.