Inventor
CHANG HUI-CHENG
TW27 patents
⚠️ This page may combine multiple inventors who share the name “CHANG HUI-CHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
22 patentsUS10991695B2Apr 27, 2021
Method for manufacturing semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10622356B2Apr 14, 2020
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US9966448B2May 8, 2018
Method of making a silicide beneath a vertical structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9805968B2Oct 31, 2017
Vertical structure having an etch stop over portion of the source
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9590090B2Mar 7, 2017
Method of forming channel of gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9837504B2Dec 5, 2017
Method of modifying capping layer in semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12471361B2Nov 11, 2025
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11257819B2Feb 22, 2022
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11127837B2Sep 21, 2021
Method of forming MOSFET structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11056486B2Jul 6, 2021
Semiconductor device with multiple threshold voltage and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12094757B2Sep 17, 2024
Method for manufacturing semiconductor device with semiconductor capping layer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US11688625B2Jun 27, 2023
Method for manufacturing semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US10461170B2Oct 29, 2019
Method of forming MOSFET structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10276562B2Apr 30, 2019
Semiconductor device with multiple threshold voltage and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10276725B2Apr 30, 2019
Gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9911812B2Mar 6, 2018
Semiconductor device having a fin shell covering a fin core
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9577093B2Feb 21, 2017
Vertical structure and method of forming semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10756199B2Aug 25, 2020
Fin field effect transistors having conformal oxide layers and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10269921B2Apr 23, 2019
Fin field effect transistors having conformal oxide layers and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9515188B2Dec 6, 2016
Fin field effect transistors having conformal oxide layers and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10879061B2Dec 29, 2020
Semiconductor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US10181397B2Jan 15, 2019
Semiconductor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
TAIWAN SEMICONDUCTOR MFG
5 patentsUS8927418B1Jan 6, 2015
Systems and methods for reducing contact resistivity of semiconductor devices
TAIWAN SEMICONDUCTOR MFG5 citations73
US9343412B2May 17, 2016
Method of forming MOSFET structure
TAIWAN SEMICONDUCTOR MFG0 citations52
US9214513B2Dec 15, 2015
Fin structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG1 citations52
US9166001B2Oct 20, 2015
Vertical structure and method of forming semiconductor device
TAIWAN SEMICONDUCTOR MFG0 citations52
US9166035B2Oct 20, 2015
Delta doping layer in MOSFET source/drain region
TAIWAN SEMICONDUCTOR MFG1 citations52