P

Inventor

CHANG HUI-CHENG

TW27 patents
⚠️ This page may combine multiple inventors who share the name “CHANG HUI-CHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

22 patents
US10991695B2Apr 27, 2021

Method for manufacturing semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10622356B2Apr 14, 2020

Semiconductor device and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US9966448B2May 8, 2018

Method of making a silicide beneath a vertical structure

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9805968B2Oct 31, 2017

Vertical structure having an etch stop over portion of the source

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9590090B2Mar 7, 2017

Method of forming channel of gate structure

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9837504B2Dec 5, 2017

Method of modifying capping layer in semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12471361B2Nov 11, 2025

Semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11257819B2Feb 22, 2022

Semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11127837B2Sep 21, 2021

Method of forming MOSFET structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11056486B2Jul 6, 2021

Semiconductor device with multiple threshold voltage and method of fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12094757B2Sep 17, 2024

Method for manufacturing semiconductor device with semiconductor capping layer

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US11688625B2Jun 27, 2023

Method for manufacturing semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US10461170B2Oct 29, 2019

Method of forming MOSFET structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10276562B2Apr 30, 2019

Semiconductor device with multiple threshold voltage and method of fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10276725B2Apr 30, 2019

Gate structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9911812B2Mar 6, 2018

Semiconductor device having a fin shell covering a fin core

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9577093B2Feb 21, 2017

Vertical structure and method of forming semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10756199B2Aug 25, 2020

Fin field effect transistors having conformal oxide layers and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10269921B2Apr 23, 2019

Fin field effect transistors having conformal oxide layers and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9515188B2Dec 6, 2016

Fin field effect transistors having conformal oxide layers and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10879061B2Dec 29, 2020

Semiconductor device and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US10181397B2Jan 15, 2019

Semiconductor device and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49

TAIWAN SEMICONDUCTOR MFG

5 patents