P

Inventor

WONG ROBERT C

US76 patents
⚠️ This page may combine multiple inventors who share the name “WONG ROBERT C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

42 patents
US9293192B1Mar 22, 2016

SRAM cell with dynamic split ground and split wordline

IBM29 citations98
US6549453B2Apr 15, 2003

Method and apparatus for writing operation in SRAM cells employing PFETS pass gates

IBM92 citations98
US6341083B1Jan 22, 2002

CMOS SRAM cell with PFET passgate devices

IBM66 citations96
US5654917AAug 5, 1997

Process for making and programming a flash memory array

IBM47 citations96
US5541130AJul 30, 1996

Process for making and programming a flash memory array

IBM39 citations96
US9564446B1Feb 7, 2017

SRAM design to facilitate single fin cut in double sidewall image transfer process

IBM34 citations94
US9576646B2Feb 21, 2017

SRAM cell with dynamic split ground and split wordline

IBM16 citations93
US7732872B2Jun 8, 2010

Integration scheme for multiple metal gate work function structures

IBM24 citations93
US7586806B2Sep 8, 2009

SRAM active write assist method for improved operational margins

IBM33 citations93
US7515489B2Apr 7, 2009

SRAM having active write assist for improved operational margins

IBM19 citations93
US7283410B2Oct 16, 2007

Real-time adaptive SRAM array for high SEU immunity

IBM52 citations93
US6654277B1Nov 25, 2003

SRAM with improved noise sensitivity

IBM39 citations93
US6507511B1Jan 14, 2003

Secure and dense SRAM cells in EDRAM technology

IBM26 citations93
US5681770AOct 28, 1997

Process for making and programming a flash memory array

IBM22 citations93
US8035126B2Oct 11, 2011

One-transistor static random access memory with integrated vertical PNPN device

IBM28 citations92
US7313032B2Dec 25, 2007

SRAM voltage control for improved operational margins

IBM21 citations92
US6552941B2Apr 22, 2003

Method and apparatus for identifying SRAM cells having weak pull-up PFETs

IBM20 citations92
US6461877B1Oct 8, 2002

Variable data compensation for vias or contacts

IBM23 citations90
US10366746B2Jul 30, 2019

SRAM cell with dynamic split ground and split wordline

IBM5 citations84
US10347327B2Jul 9, 2019

SRAM cell with dynamic split ground and split wordline

IBM4 citations84
US9934843B2Apr 3, 2018

SRAM cell with dynamic split ground and split wordline

IBM5 citations84
US9881668B2Jan 30, 2018

SRAM cell with dynamic split ground and split wordline

IBM3 citations84
US7859044B2Dec 28, 2010

Partially gated FINFET with gate dielectric on only one sidewall

IBM11 citations84
US7768816B2Aug 3, 2010

SRAM cell design to improve stability

IBM8 citations84
US7738283B2Jun 15, 2010

Design structure for SRAM active write assist for improved operational margins

IBM18 citations84
US7678658B2Mar 16, 2010

Structure and method for improved SRAM interconnect

IBM18 citations84
US7355906B2Apr 8, 2008

SRAM cell design to improve stability

IBM14 citations84
US6958516B2Oct 25, 2005

Discriminative SOI with oxide holes underneath DC source/drain

IBM18 citations84
US6751151B2Jun 15, 2004

Ultra high-speed DDP-SRAM cache

IBM17 citations84
US6256755B1Jul 3, 2001

Apparatus and method for detecting defective NVRAM cells

IBM16 citations84
US7915691B2Mar 29, 2011

High density SRAM cell with hybrid devices

IBM19 citations83
US5672892ASep 30, 1997

Process for making and programming a flash memory array

IBM14 citations82
US6888741B2May 3, 2005

Secure and static 4T SRAM cells in EDRAM technology

IBM7 citations74
US5276638AJan 4, 1994

Bipolar memory cell with isolated PNP load

IBM15 citations74
US5255240AOct 19, 1993

One stage word line decoder/driver with speed-up Darlington drive and adjustable pull down

IBM9 citations74
US5124573AJun 23, 1992

Adjustable clock chopper/expander circuit

IBM17 citations74
US4813017AMar 14, 1989

Semiconductor memory device and array

IBM17 citations74
US10083272B2Sep 25, 2018

Integrated circuit design layout optimizer based on process variation and failure mechanism

IBM3 citations73
US9263457B2Feb 16, 2016

Cross-coupling of gate conductor line and active region in semiconductor devices

IBM4 citations73
US6876040B1Apr 5, 2005

Dense SRAM cells with selective SOI

IBM8 citations73
US6834003B2Dec 21, 2004

Content addressable memory with PFET passgate SRAM cells

IBM12 citations71
US4922455AMay 1, 1990

Memory cell with active device for saturation capacitance discharge prior to writing

IBM8 citations66

GLOBALFOUNDRIES INC

2 patents

TESSERA LLC

2 patents

HEYMANN OMER

1 patent

SARDESAI VIRAJ Y

1 patent

BUTT SHAHID A

1 patent

ADEIA SEMICONDUCTOR SOLUTIONS LLC

1 patent

Showing the top 50 of 76 patents by PatentIndex Score.