Inventor

YOON JAE-MAN

KR77 patents

⚠️ This page may combine multiple inventors who share the name “YOON JAE-MAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YOON JAE-MAN

SAMSUNG ELECTRONICS CO LTD

3-Dimensional flash memory device and method of fabricating the same

Semiconductor devices having transistors with vertical channels and method of fabricating the same

Methods of fabricating fin field transistors

Fin field effect transistor device and method of fabricating the same

Method of manufacturing a fin field effect transistor

Transistor structure using epitaxial layers and manufacturing method thereof

Integrated circuit semiconductor device including stacked level transistors

Methods of manufacturing vertical channel semiconductor devices

Semiconductor device having vertical transistor and method of fabricating the same

Circuit device including vertical transistors connected to buried bitlines and method of manufacturing the same

Vertical channel semiconductor devices and methods of manufacturing the same

Bulk substrates in FinFETs with trench insulation surrounding FIN pairs having FINs separated by recess hole shallower than trench

Method of operating a flash memory device

Method of forming fin field effect transistor

Methods of manufacturing semiconductor memory devices including a vertical channel transistor

Double gate field effect transistor and method of manufacturing the same

Semiconductor devices with buried bit lines and methods of manufacturing semiconductor devices

Semiconductor memory device with vertical channel formed on semiconductor pillars

Semiconductor memory device having vertical channel transistor and method for fabricating the same

Method of fabricating semiconductor device having vertical channel transistor

Semiconductor device having vertical transistor formed on an active pattern protruding from a substrate

Method of forming semiconductor devices having a vertical channel transistor

DRAM device with cell epitaxial layers partially overlap buried cell gate electrode

3-Dimensional flash memory device and method of fabricating the same

Field effect transistor and method for manufacturing the same

Semiconductor memory device with vertical channel transistor and method of fabricating the same

Memory device having shared open bit line sense amplifier architecture

Semiconductor device and method of manufacturing the same

Method of fabricating fin field effect transistor using isotropic etching technique

Semiconductor device having a junction extended by a selective epitaxial growth (SEG) layer and method of fabricating the same

Field effect transistors including source/drain regions extending beneath pillars

Semiconductor device having buried gate electrode and method of fabricating the same

Semiconductor device

Semiconductor device

Semiconductor device having a fin structure and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Method of fabricating semiconductor device having a junction extended by a selective epitaxial growth (SEG) layer

Double gate field effect transistor and method of manufacturing the same

Method of fabricating semiconductor device with cell epitaxial layers partially overlap buried cell gate electrode

YOON JAE-MAN

Access device having vertical channel and related semiconductor device and a method of fabricating the access device

Semiconductor device including contact plug and associated methods

Methods of manufacturing vertical channel semiconductor devices

Vertical type integrated circuit devices and memory devices including conductive lines supported by Mesa structures and methods of fabricating the same

Semiconductor memory devices including a vertical channel transistor having a buried bit line

Method of manufacturing a semiconductor device

SK HYNIX INC

Semiconductor device with air gap and method for fabricating the same

Semiconductor device with air gap and method for fabricating the same

Semiconductor device with a low-k spacer and method for fabricating the same

KIM BONG-SOO

Semiconductor device having vertical transistor and method of fabricating the same

YOON JAE MAN

Semiconductor memory device