Inventor
ZHOU BAOSUO
US37 patents
⚠️ This page may combine multiple inventors who share the name “ZHOU BAOSUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
20 patentsUS7732343B2Jun 8, 2010
Simplified pitch doubling process flow
MICRON TECHNOLOGY INC572 citations99
US7807575B2Oct 5, 2010
Methods to reduce the critical dimension of semiconductor devices
MICRON TECHNOLOGY INC56 citations98
US7393789B2Jul 1, 2008
Protective coating for planarization
MICRON TECHNOLOGY INC110 citations98
US9679781B2Jun 13, 2017
Methods for integrated circuit fabrication with protective coating for planarization
MICRON TECHNOLOGY INC27 citations93
US7659208B2Feb 9, 2010
Method for forming high density patterns
MICRON TECHNOLOGY INC14 citations93
US7902074B2Mar 8, 2011
Simplified pitch doubling process flow
MICRON TECHNOLOGY INC26 citations92
US10607844B2Mar 31, 2020
Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
MICRON TECHNOLOGY INC4 citations84
US10096483B2Oct 9, 2018
Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
MICRON TECHNOLOGY INC6 citations84
US9761457B2Sep 12, 2017
Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
MICRON TECHNOLOGY INC7 citations84
US9184159B2Nov 10, 2015
Simplified pitch doubling process flow
MICRON TECHNOLOGY INC7 citations84
US9003651B2Apr 14, 2015
Methods for integrated circuit fabrication with protective coating for planarization
MICRON TECHNOLOGY INC9 citations83
US8980752B2Mar 17, 2015
Method of forming a plurality of spaced features
MICRON TECHNOLOGY INC14 citations83
US7910483B2Mar 22, 2011
Trim process for critical dimension control for integrated circuits
MICRON TECHNOLOGY INC7 citations83
US7662718B2Feb 16, 2010
Trim process for critical dimension control for integrated circuits
MICRON TECHNOLOGY INC14 citations83
US9305782B2Apr 5, 2016
Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
MICRON TECHNOLOGY INC3 citations82
US8030217B2Oct 4, 2011
Simplified pitch doubling process flow
MICRON TECHNOLOGY INC5 citations74
US8871648B2Oct 28, 2014
Method for forming high density patterns
MICRON TECHNOLOGY INC2 citations63
US11335563B2May 17, 2022
Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
MICRON TECHNOLOGY INC0 citations62
US8011090B2Sep 6, 2011
Method for forming and planarizing adjacent regions of an integrated circuit
MICRON TECHNOLOGY INC2 citations62
US8530352B2Sep 10, 2013
Methods of patterning a material
MICRON TECHNOLOGY INC0 citations51
ZHOU BAOSUO
5 patentsUS8852851B2Oct 7, 2014
Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
ZHOU BAOSUO23 citations92
US8836083B2Sep 16, 2014
Methods to reduce the critical dimension of semiconductor devices and related semiconductor devices
ZHOU BAOSUO15 citations92
US8338304B2Dec 25, 2012
Methods to reduce the critical dimension of semiconductor devices and related semiconductor devices
ZHOU BAOSUO27 citations92
US8324107B2Dec 4, 2012
Method for forming high density patterns
ZHOU BAOSUO9 citations84
US9330934B2May 3, 2016
Methods of forming patterns on substrates
ZHOU BAOSUO5 citations72
LAM RES CORP
4 patentsUS9870899B2Jan 16, 2018
Cobalt etch back
LAM RES CORP32 citations93
US10784086B2Sep 22, 2020
Cobalt etch back
LAM RES CORP9 citations83
US9570320B2Feb 14, 2017
Method to etch copper barrier film
LAM RES CORP3 citations72
US9589853B2Mar 7, 2017
Method of planarizing an upper surface of a semiconductor substrate in a plasma etch chamber
LAM RES CORP0 citations41
LODESTAR LICENSING GROUP LLC
2 patentsUS12463044B2Nov 4, 2025
Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
LODESTAR LICENSING GROUP LLC0 citations62
US11935756B2Mar 19, 2024
Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
LODESTAR LICENSING GROUP LLC0 citations62